Cache SRAM, 32KX18, 9ns, BICMOS, PQCC52, PLASTIC, LCC-52
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | IDT (Integrated Device Technology) |
零件包装代码 | LCC |
包装说明 | PLASTIC, LCC-52 |
针数 | 52 |
Reach Compliance Code | not_compliant |
ECCN代码 | EAR99 |
最长访问时间 | 9 ns |
其他特性 | BURST COUNTER; SELF TIMED WRITE; ADDRESS REGISTER |
I/O 类型 | COMMON |
JESD-30 代码 | S-PQCC-J52 |
JESD-609代码 | e0 |
长度 | 19.1262 mm |
内存密度 | 589824 bit |
内存集成电路类型 | CACHE SRAM |
内存宽度 | 18 |
湿度敏感等级 | 1 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 52 |
字数 | 32768 words |
字数代码 | 32000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 32KX18 |
输出特性 | 3-STATE |
可输出 | YES |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | QCCJ |
封装等效代码 | LDCC52,.8SQ |
封装形状 | SQUARE |
封装形式 | CHIP CARRIER |
并行/串行 | PARALLEL |
电源 | 5 V |
认证状态 | Not Qualified |
座面最大高度 | 4.572 mm |
最大待机电流 | 0.03 A |
最小待机电流 | 4.75 V |
最大压摆率 | 0.32 mA |
最大供电电压 (Vsup) | 5.25 V |
最小供电电压 (Vsup) | 4.75 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | BICMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn85Pb15) |
端子形式 | J BEND |
端子节距 | 1.27 mm |
端子位置 | QUAD |
宽度 | 19.1262 mm |
IDT71419S9J | IDT71419S12J | IDT71419S12J8 | IDT71419S9J8 | IDT71419S10J | IDT71419S10J8 | |
---|---|---|---|---|---|---|
描述 | Cache SRAM, 32KX18, 9ns, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 32KX18, 12ns, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 32KX18, 12ns, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 32KX18, 9ns, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 32KX18, 10ns, BICMOS, PQCC52, PLASTIC, LCC-52 | Cache SRAM, 32KX18, 10ns, BICMOS, PQCC52, PLASTIC, LCC-52 |
零件包装代码 | LCC | LCC | LCC | LCC | LCC | LCC |
包装说明 | PLASTIC, LCC-52 | PLASTIC, LCC-52 | QCCJ, | QCCJ, | PLASTIC, LCC-52 | QCCJ, |
针数 | 52 | 52 | 52 | 52 | 52 | 52 |
Reach Compliance Code | not_compliant | not_compliant | unknown | unknown | not_compliant | unknown |
ECCN代码 | EAR99 | EAR99 | 3A991.B.2.B | 3A991.B.2.B | EAR99 | 3A991.B.2.B |
最长访问时间 | 9 ns | 12 ns | 12 ns | 9 ns | 10 ns | 10 ns |
其他特性 | BURST COUNTER; SELF TIMED WRITE; ADDRESS REGISTER | BURST COUNTER; SELF TIMED WRITE; ADDRESS REGISTER | BURST COUNTER | BURST COUNTER | BURST COUNTER; SELF TIMED WRITE; ADDRESS REGISTER | BURST COUNTER |
JESD-30 代码 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm |
内存密度 | 589824 bit | 589824 bit | 589824 bit | 589824 bit | 589824 bit | 589824 bit |
内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
内存宽度 | 18 | 18 | 18 | 18 | 18 | 18 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 52 | 52 | 52 | 52 | 52 | 52 |
字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 32KX18 | 32KX18 | 32KX18 | 32KX18 | 32KX18 | 32KX18 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
可输出 | YES | YES | YES | YES | YES | YES |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 4.572 mm | 4.572 mm | 4.572 mm | 4.572 mm | 4.572 mm | 4.572 mm |
最大供电电压 (Vsup) | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V |
最小供电电压 (Vsup) | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | TIN LEAD | TIN LEAD | Tin/Lead (Sn85Pb15) | TIN LEAD |
端子形式 | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
宽度 | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm |
厂商名称 | IDT (Integrated Device Technology) | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
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