NE68718-T1概述

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN

NE68718-T1规格参数

参数名称	属性值
厂商名称	California Eastern Labs
包装说明	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOW NOISE
最大集电极电流 (IC)	0.03 A
基于收集器的最大容量	0.6 pF
集电极-发射极最大电压	3 V
配置	SINGLE
最小直流电流增益 (hFE)	70
最高频带	S BAND
JESD-30 代码	R-PDSO-G4
元件数量	1
端子数量	4
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	13000 MHz

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NE68718-T1相似产品对比

	NE68718-T1	NE68718-T2	NE68719-T2	NE68730-T2	NE68733-T2	NE68733-T1	NE68739R-T1	NE68739R-T2	NE68739-T2	NE68739-T1
描述	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
包装说明	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
最大集电极电流 (IC)	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
基于收集器的最大容量	0.6 pF	0.6 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF
集电极-发射极最大电压	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	70	70	70	70	70	70	70	70	70	70
最高频带	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND
JESD-30 代码	R-PDSO-G4	R-PDSO-G4	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	4	4	3	3	3	3	4	4	4	4
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	13000 MHz	13000 MHz	11000 MHz	11000 MHz	12000 MHz	12000 MHz	10000 MHz	10000 MHz	10000 MHz	10000 MHz
厂商名称	California Eastern Labs	-	-	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs

NE68718-T1

NE68718-T1概述

NE68718-T1规格参数

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NE68718-T1相似产品对比

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