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MURF1660CTC0G: 产品描述Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN; 产品类别分立半导体二极管; 文件大小415KB，共3页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/; 标准

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MURF1660CTC0G概述

Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MURF1660CTC0G规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Taiwan Semiconductor
包装说明	ITO-220AB, 3 PIN
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	UL RECOGNIZED
应用	HIGH VOLTAGE ULTRA FAST RECOVERY
外壳连接	ISOLATED
配置	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.5 V
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
最大非重复峰值正向电流	100 A
元件数量	2
相数	1
端子数量	3
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	8 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
最大重复峰值反向电压	600 V
最大反向电流	10 µA
最大反向恢复时间	0.05 µs
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE

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CREAT BY A

MURF1620CT - MURF1660CT

16.0AMPS. Isolated Switchmode Power Rectifiers

ITO-220AB

Features

UL Recognized File # E-326243

Ultrafast 35 and 60 Nanasecond Recovery times

175℃ operating Junction Temperature

Popular ITO-220AB Package

Expoxy meets UL94, V0 @ 1/8"

High temperature glass passivated junction

High voltage capability to 600 volts

Low leakage specified @ 150℃ case temperature

Current derating @ both case and ambient

temperatures

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Mechanical Data

Case: Epoxy, molded

Terminal: Pure tin plated, lead free

Lead temperature for soldering purposes:

260℃ Max. for 10 seconds

Finish: all external surfaces corrosion resistant and

terminal leads are readily solderable

Shipped 50 units per plastic tube

Weight:1.9 grams

Ordering Information (example)

Part No.

Package

Packing

Packing code

(Green)

C0G

MURF1620CT ITO-220AB 50 / TUBE

Maximum Ratings and Electrical Characteristics

Rating at 25

℃

ambient temperature unless otherwise specified.

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method )

Maximum Instantaneous Forward Voltage (Note 1)

@ I

=8 A, T

=25℃

@ I

=8 A, T

=125℃

Maximum Reverse Current

@ T

=25

℃

@ T

=125

℃

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

Note 1: Pulse lest: tp = 300uS, Duty Cycle<1%

Symbol

RRM

RMS

F(AV)

FSM

MURF

1620CT

200

140

200

MURF

1640CT

400

280

400

100

MURF

1660CT

600

420

600

Units

0.975

0.895

250

3.0

1.3

1.1

500

2.0

-55 to + 150

1.5

1.2

θJC

STG

C/W

Note 2: Reverse Recovery Test Condition:IF=0.5A, IR=1.0A, IRR=0.25A

Version:I13

MURF1660CTC0G相似产品对比

	MURF1660CTC0G	MURF1620CTC0	MURF1620CTC0G	MURF1640CTC0	MURF1640CTC0G	MURF1660CTC0
描述	Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
是否Rohs认证	符合	符合	符合	符合	符合	符合
厂商名称	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
包装说明	ITO-220AB, 3 PIN	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	ITO-220AB, 3 PIN	R-PSFM-T3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
应用	HIGH VOLTAGE ULTRA FAST RECOVERY	HIGH VOLTAGE ULTRA FAST RECOVERY	HIGH VOLTAGE ULTRA FAST RECOVERY	HIGH VOLTAGE ULTRA FAST RECOVERY	HIGH VOLTAGE ULTRA FAST RECOVERY	HIGH VOLTAGE ULTRA FAST RECOVERY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.5 V	0.975 V	0.975 V	1.3 V	1.3 V	1.5 V
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
最大非重复峰值正向电流	100 A	100 A	100 A	100 A	100 A	100 A
元件数量	2	2	2	2	2	2
相数	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	8 A	8 A	8 A	8 A	8 A	8 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
最大重复峰值反向电压	600 V	200 V	200 V	400 V	400 V	600 V
最大反向电流	10 µA	5 µA	5 µA	10 µA	10 µA	10 µA
最大反向恢复时间	0.05 µs	0.025 µs	0.025 µs	0.05 µs	0.05 µs	0.05 µs
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

MURF1660CTC0G

MURF1660CTC0G概述

MURF1660CTC0G规格参数

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