Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION
NPN transistor mounted in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features very
high output voltage capabilities.
It is primarily intended for final stages
in MATV system amplifiers, and is
also suitable for use in low power
band IV and V equipment.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
P
tot
f
T
V
o
PARAMETER
collector-emitter voltage
collector current
total power dissipation
transition frequency
output voltage
up to T
c
= 110
°C
I
C
= 240 mA; V
CE
= 15 V; f = 500 MHz;
T
j
= 25
°C
I
c
= 240 mA; V
CE
= 15 V;
d
im
=
−60
dB; R
L
= 75
Ω;
f
(p+q−r)
= 793.25 MHz; T
amb
= 25
°C
I
c
= 240 mA; V
CE
= 15 V; R
L
= 75
Ω;
f = 800 MHz; T
amb
= 25
°C
I
c
= 240 mA; V
CE
= 15 V; R
L
= 75
Ω;
f = 800 MHz; T
amb
= 25
°C
WARNING
Product and environmental safety - toxic materials
open base
CONDITIONS
TYP.
−
−
−
4
1.6
PINNING
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
fpage
BFQ68
4
1
3
2
Top view
MBK187
Fig.1 SOT122A.
MAX.
18
300
4.5
−
−
UNIT
V
mA
W
GHz
V
P
L1
ITO
output power at 1 dB gain
compression
third order intercept point
28
47
−
−
dBm
dBm
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
c
= 110
°C
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
BFQ68
MAX.
25
18
2
300
4.5
150
200
UNIT
V
V
V
mA
W
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-c
PARAMETER
thermal resistance from junction to case
THERMAL RESISTANCE
20 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
C
cs
G
UM
V
o
P
L1
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
collector-stud capacitance
maximum unilateral power gain
(note 2)
output voltage
output power at 1 dB gain
compression (see Fig.2)
third order intercept point (see
Fig.2)
CONDITIONS
I
E
= 0; V
CB
= 15 V
I
C
= 240 mA; V
CE
= 15 V
I
C
= 240 mA; V
CE
= 15 V;
f = 500 MHz
I
E
= i
e
= 0; V
CB
= 15 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 15 V; f = 1 MHz
note 1
I
C
= 240 mA; V
CE
= 15 V;
f = 800 MHz; T
amb
= 25
°C
note 3
I
C
= 240 mA; V
CE
= 15 V; R
L
= 75
Ω;
T
amb
= 25
°C;
measured at f = 800 MHz
note 4
MIN.
−
25
−
−
−
−
−
−
−
−
TYP.
−
75
4
3.8
20
2.3
0.8
13
1.6
28
BFQ68
MAX.
50
−
−
−
−
−
−
−
−
−
UNIT
µA
GHz
pF
pF
pF
pF
dB
V
dBm
ITO
Notes
−
47
−
dBm
1. Measured with emitter and base grounded.
2. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
3. d
im
=
−60
dB (see Figs 2 and 7) (DIN 45004B); I
C
= 240 mA; V
CE
= 15 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 795.25 MHz;
V
q
= V
o
−6
dB; f
q
= 803.25 MHz;
V
r
= V
o
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
4. I
C
= 240 mA; V
CE
= 15 V; R
L
= 75
Ω;
T
amb
= 25
°C;
P
p
= ITO
−
6 dB; f
p
= 800 MHz;
P
q
= ITO
−
6 dB; f
q
= 801 MHz;
measured at f
(2q−p)
= 802 MHz and at f
(2p−q)
= 799 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
handbook, full pagewidth
2.2 nF
2.2 nF
VBB
2.2 kΩ
L2
2.2 nF
2.2 nF
L1
2.2 nF
75
Ω
4.7
Ω
1.2
pF
180
Ω
DUT
1.2
pF
24
Ω
24
Ω
75
Ω
VCC
1.8 pF
0.68 pF
MEA273
f = 40 to 860 MHz.
L1 = L2 = 5
µH
Ferroxcube choke.
Fig.2 Intermodulation distortion MATV test circuit.
MBB361
MEA272
120
handbook, halfpage
h FE
6
handbook, halfpage
fT
(GHz)
4
80
40
2
0
0
40
80
120
160
I C (mA)
0
10
10
2
I C (mA)
10
3
V
CE
= 10 V; T
j
= 25
°C.
V
CE
= 15 V; f = 500 MHz; T
j
= 25
°C
Fig.3
DC current gain as a function of collector
current.
Fig.4
Transition frequency as a function of
collector current.
September 1995
5
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