2N2906A, L, UA, UB
2N2907A, L, UA, UB
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Features
•
•
•
•
Qualified to MIL-PRF-19500/291
Available in JAN, JANTX, JANTXV, JANS and JANSR
Rad Hard Levels M, D, P, L and R
TO-18, Surface Mount UA & UB Packages
Applications
•
Switching and Linear Applications
•
DC and VHF Amplifier Applications
Electrical Specifications (T
A
= 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Units
Minimum Maximum
Collector
-
Emitter Breakdown
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
I
C
=
-10
mA dc
V
CB
=
-60
V dc
V
CB
=
-50
V dc
V
EB
=
-5.0
V dc
V
EB
=
-4.0
V dc
V
CE
=
-50
V dc
2N2906A, L, UA, UB
V
CE
=
-10
V dc: I
C
=
-0.1
mA dc
V
CE
=
-10
V dc; I
C
=
-1.0
mA dc
V
CE
=
-10
V dc; I
C
=
-10.0
mA dc
V
CE
=
-10
V dc; I
C
=
-150.0
mA dc
V
CE
=
-10
V dc; I
C
=
-500.0
mA dc
2N2907A, L, UA, UB
V
CE
=
-10
V dc; I
C
=
-0.1
mA dc
V
CE
=
-10
V dc; I
C
=
-1.0
mA dc
V
CE
=
-10
V dc; I
C
=
-10.0
mA dc
V
CE
=
-10
V dc; I
C
=
-150.0
mA dc
V
CE
=
-10
V dc; I
C
=
-500.0
mA dc
V
(BR)CEO
I
CBO1
I
CBO2
I
EBO1
I
EBO2
I
CES
V dc
µA dc
nA dc
µA dc
nA dc
nA dc
-60
—
—
—
—
-10
-10
-10
-50
-50
40
40
40
40
40
h
FE
75
100
100
100
50
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
I
CBO3
V dc
V dc
µA dc
—
-0.6
—
—
—
175
—
120
—
—
450
—
300
—
-0.4
-1.6
-1.3
-2.6
-10
Forward Current Transfer Ratio
Collector
-
Base Cutoff Current
Base
-
Emitter Saturation Voltage
Collector
-
Base Cutoff Current
I
C
=
-150
mA dc, I
B
=
-15
mA dc
I
C
=
-500
mA dc, I
B
=
-50
mA dc
I
C
=
-150
mA dc, I
B
=
-15
mA dc
I
C
=
-500
mA dc, I
B
=
-50
mA dc
T
A
= +150
o
C
V
CB
=
-50
V dc
T
A
=
-55
o
C
V
CE
=
-10
V dc: I
C
=
-10
mA dc
2N2906A
2N2907A
Forward Current Transfer Ratio
h
FE6
-
20
50
1
(Continued next page)
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2906A, L, UA, UB
2N2907A, L, UA, UB
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Electrical Specifications ( T
A
= 25°C unless otherwise specified)
Parameter
Dynamic Characteristics:
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Magnitude of Small-Signal Short-Circuit,
Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance (Output Open-
Circuited)
Switching Characteristics:
Saturated Turn-On Time
Saturated Turn-Off Time
(See figure 16 of MIL-PRF-19500/291)
(See Figure 17 of MIL-PRF-19500/291)
t
on
t
off
ns
ns
—
—
45
300
V
CE
=
-10
V dc; I
C
=
-1.0
mA dc; f = 1 kHz
2N2906A, L, UA, UB
2N2907A, L, UA, UB
V
CE
=
-20
V dc; I
C
=
-20
mA dc; f = 100
MHz
V
CB
=
-10
V dc; I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
V
EB
=
-2.0
V dc; I
C
= 0; 100 kHz ≤ f ≤ 1
MHz
h
fe
40
100
2.0
pF
pF
—
—
—
Test Conditions
Symbol Units
Minimum Maximum
| h
fe
|
C
obo
C
ibo
—
8
30
Absolute Maximum Ratings (T
A
= 25°C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Value
-60
V dc
-60
V dc
-5
V dc
-600
mA dc
-65°C
to +200°C
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2906A, L, UA, UB
2N2907A, L, UA, UB
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Absolute Maximum Ratings (T
A
= 25°C unless otherwise specified)
(1)
(2)
(3)
(4)
For derating, see figures 7, 8, 9, 10 and 11 of MIL-PRF-19500/291
For abbreviations please see paragraph 3.3 of MIL-PRF-19500/291
For thermal curves, see figures 12, 13, 14, 15 and 16 of MIL-PRF-19500/291
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute
figures 7 and 12 for the UA, UB, UBC and UBCN package and use R
ᶱJA
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2906A, L, UA, UB
2N2907A, L, UA, UB
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Outline Drawing (TO-18):
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N2906A, L, UA, UB
2N2907A, L, UA, UB
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Outline Drawing (UA Surface Mount):
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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