MBRF2040CT
Technical Data
Data Sheet N1534, Rev. A
MBRF2040CT SCHOTTKY RECTIFIER
Features
150C T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
ITO-220AB
Additional testing can be offered upon request
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive
Surge Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
Max.
40
10(Per Leg)
20(Per Device)
180
Units
V
A
A
50% duty cycle @Tc=105°C, rectangular
wave form
8.3ms, Half Sine pulse
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(Per Leg)*
Reverse Current at DC condition
(Per Leg)*
Junction Capacitance(Per Leg)
Series Inductance(Per Leg)
Voltage Rate of Change
RSM Isolation Voltage
(t = 1.0 second, R. H. < =30%,
T
A
= 25
C)
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
L
S
dv/dt
V
ISO
Condition
@20A, Pulse, T
J
= 25
C
@20A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C,
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Clip mounting, the epoxy body away from
the heatsink edge by more than 0.110"
along the lead direction.
Clip mounting, the epoxy body is inside
the heatsink.
Screw mounting, the epoxy body is inside
the heatsink.
Typ.
0.75
0.70
0.03
9
280
8.0
-
-
-
-
Max.
0.84
0.72
1
15.0
400
-
10,000
4500
3500
1500
Units
V
V
mA
mA
pF
nH
V/s
V
* Pulse width < 300 µs, duty cycle < 2%
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MBRF2040CT
Technical Data
Data Sheet N1534, Rev. A
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case(Per Leg)
Approximate Weight
Symbol
T
J
T
stg
R
JC
wt
Condition
-
-
DC operation
-
Specification
-55 to +150
-55 to +150
5
2
Units
C
C
C/W
g
Ratings and Characteristics Curves
10000
Reverse Current-IR(MA)
Junction Capacitance-CT(PF)
100
10
1
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
100
Reverse Voltage-VR(%)
TJ=125℃
1000
TJ=25℃
100
TJ=25℃
10
0
5
10
15
20
25
30
35
40
Reverse Voltage-VR(V)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current-IF(A)
Fig.2-Typical Reverse Characteristics
100
10
TJ=125℃
TJ=25℃
1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage Drop-VF(V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
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MBRF2040CT
Technical Data
Data Sheet N1534, Rev. A
Mechanical Dimensions ITO-220AB
SYMBOL
A
A1
A2
A3
b
b1
b2
b3
b4
c
D
E
e
e1
H1
L
L1
L2
L3
ΦP1(上口)
ΦP2(下口)
Q
Θ1
Θ2
Θ3
Θ4
Θ5
MIN.
4.30
1.10
2.80
2.50
0.50
1.10
1.50
1.20
1.60
0.50
14.80
9.96
6.50
12.70
1.60
0.80
0.60
3.30
2.99
2.50
Millimeters
TYP.
4.50
1.30
3.00
2.70
0.60
1.20
1.60
1.30
1.70
0.60
15.00
10.16
2.55
5.10
6.70
13.20
1.80
1.00
0.80
3.50
3.19
2.70
5°
4°
10°
5°
5°
MAX.
4.70
1.50
3.20
2.90
0.75
1.35
1.75
1.45
1.85
0.75
15.20
10.36
6.90
13.70
2.00
1.20
1.00
3.70
3.39
2.90
Tube Specification
Marking Diagram
Where XXXXX is YYWWL
MBR
F
20
40
CT
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (20A)
= Reverse Voltage (40V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions：Molding
resin
Epoxy resin UL:94V-0
Ordering Information
Device
MBRF2040CT
ITO-220AB
(Pb-Free)
Package
Shipping
50 pcs/ tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification
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MBRF2040CT
Technical Data
Data Sheet N1534, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department
for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other
cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no
responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits
described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary
damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing)
Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC -
Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
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