205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246
ELECTRICAL CHARACTERISTICS:
Characteristic
OM400L60CMS (Tc= 25°C unless otherwise specified)
°
Symbol
Min.
Typ.
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, V
CE
=0V
Zero Gate Voltage Drain Current, V
GE
=0, V
CE
=600V
Gate Emitter Leakage Current, V
GE
=+/-15V, V
CE
=0V
ON CHARACTERISTICS
Gate Threshold Voltage, V
CE
=V
GE,
I
C
=6mA
Collector Emitter Saturation Voltage, V
GE
=15V, IC=400A
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
Input Capacitance
Output Capacitance
Rev. Transfer Capacitance
V
CES
I
CES
I
GES
600
25
2
V
µA
µA
V
GE(TH)
V
CE(SAT)
4.5
2.4
6.5
2.7
V
V
V
CE
=5V, I
C
=400A
V
GE
=0
V
CE
=25V
f=1.0MHz
gfs
Cies
Coes
Cres
42
20000
1080
1120
S
pF
pF
pF
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
CC
= 300V, I
C
=400A
Turn-on Losses
V
GE
=+15/-10V, R
G
=6.8Ω
Turn-off Delay Time
L=100µH,Tj=125°C
Fall Time
Turn-off Losses
DIODE CHARACTERISTICS
Maximum Forward Voltage
t(on)
tr
Eon
td(off)
tf
Eoff
800
400
20
800
350
25
1600
800
nS
nS
mJ
nS
nS
mJ
1200
800
Reverse Recovery
Characteristics
I
F
=400A, Tj=25°C
Tj=125°C
V
R
=300V, Tj=25°C
I
F
=400A, Tj=125°C
dI/dt=-1500A/µS Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
F
Qrr
Irr
trr
1.5
10
24
60
90
160
220
2.0
V
µC
A
nS
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)
Thermal Resistance, Junction to Case (Per Diode)
Maximum Junction Temperature
Isolation Voltage
Screw Torque
Mounting
Screw Torque (M6)
Terminals
Screw Torque (M3)
Terminals
Module Weight
12/08/98
Rev.D
R
thJC
R
thJC
T
jMAX
Vis
RMS
-
-
-
-
15
10
6
0.085
°C/W
0.15
°C/W
150
°C
2500
V
20
in-lb
12
in-lb
8
in-lb
400 Grams
1
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246
OM400L60CMS
IGBT Collector current vs. Collector-emitter voltage
Tj=25°C
500
Vge = 13V
Vge = 15V
400
Vge = 11V
400
IGBT Collector Current vs. Collector-emitter Voltage
Tj=-55°C
500
Vge = 13V
Vge = 15V
Vge = 11V
300
300
IC (A)
200
Vge = 9V
IC (A)
200
Vge = 9V
100
100
Vge = 7V
0
0
1
2
3
VCE (V)
4
5
6
0
0
1
2
3
VCE (V)
4
Vge = 7V
5
6
IGBT Collector Current vs. Collector-emitter voltage
Tj=125°C
500
Diode Forward Current vs. Forward voltage
500
Vge =0V
Vge = 13V
Tj=-55°C
400
Vge = 15V
400
Vge = 11V
300
300
Vge = 9V
Ic(A)
200
If (A)
200
Tj=125°C
100
100
Vge =7V
0
0
1
2
3
Vce(V)
4
5
6
Tj=25°C
0
0
0.5
1
1.5
Vf (V)
2
2.5
3
12/08/98
Rev.D
2
MEMS传感器
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