电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

OM6233SST

产品描述Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
产品类别分立半导体    晶体管   
文件大小130KB,共4页
制造商Omnirel Corp
下载文档 详细参数 选型对比 全文预览

OM6233SST概述

Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

OM6233SST规格参数

参数名称属性值
厂商名称Omnirel Corp
Reach Compliance Codeunknown
其他特性HIGH RELIABILITY
雪崩能效等级(Eas)500 mJ
外壳连接ISOLATED
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压1000 V
最大漏极电流 (ID)10 A
最大漏源导通电阻1.3 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-MSFM-T6
元件数量2
端子数量6
工作模式ENHANCEMENT MODE
封装主体材料METAL
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)30 A
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON

OM6233SST相似产品对比

OM6233SST OM6230SST OM6230SSV OM6231SST OM6231SSV OM6232SSV OM6232SST OM6233SSV OM6227SST OM6228SSV
描述 Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 24A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 24A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 24A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
厂商名称 Omnirel Corp Omnirel Corp Omnirel Corp Omnirel Corp Omnirel Corp Omnirel Corp Omnirel Corp Omnirel Corp Omnirel Corp Omnirel Corp
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
雪崩能效等级(Eas) 500 mJ 500 mJ 500 mJ 1000 mJ 1000 mJ 1000 mJ 1000 mJ 500 mJ 1000 mJ 1000 mJ
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压 1000 V 1000 V 1000 V 400 V 400 V 500 V 500 V 1000 V 400 V 500 V
最大漏极电流 (ID) 10 A 10 A 10 A 24 A 24 A 22 A 22 A 10 A 24 A 22 A
最大漏源导通电阻 1.3 Ω 1.3 Ω 1.3 Ω 0.2 Ω 0.2 Ω 0.27 Ω 0.27 Ω 1.3 Ω 0.2 Ω 0.27 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-MSFM-T6 R-MSFM-T6 R-MSFM-T6 R-MSFM-T6 R-MSFM-T6 R-MSFM-T6 R-MSFM-T6 R-MSFM-T6 R-MSFM-T6 R-MSFM-T6
元件数量 2 2 2 2 2 2 2 2 2 2
端子数量 6 6 6 6 6 6 6 6 6 6
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 METAL METAL METAL METAL METAL METAL METAL METAL METAL METAL
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 30 A 30 A 30 A 92 A 92 A 85 A 85 A 30 A 92 A 85 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2649  2122  2795  136  1312  38  50  40  13  54 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved