Power Field-Effect Transistor, 24A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, S-6E, SIP-6
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Omnirel Corp |
| 包装说明 | HERMETIC SEALED, S-6E, SIP-6 |
| Reach Compliance Code | unknown |
| 其他特性 | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 1000 mJ |
| 外壳连接 | ISOLATED |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 400 V |
| 最大漏极电流 (Abs) (ID) | 24 A |
| 最大漏极电流 (ID) | 24 A |
| 最大漏源导通电阻 | 0.2 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-MSFM-P6 |
| JESD-609代码 | e0 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 165 W |
| 最大功率耗散 (Abs) | 165 W |
| 最大脉冲漏极电流 (IDM) | 92 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| OM6231SS | OM6230SS | OM6232SS | OM6233SS | |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 24A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, S-6E, SIP-6 | Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, S-6D, SIP-6 | Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, S-6E, SIP-6 | Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, S-6E, SIP-6 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Omnirel Corp | Omnirel Corp | Omnirel Corp | Omnirel Corp |
| 包装说明 | HERMETIC SEALED, S-6E, SIP-6 | HERMETIC SEALED, S-6D, SIP-6 | HERMETIC SEALED, S-6E, SIP-6 | HERMETIC SEALED, S-6E, SIP-6 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 1000 mJ | 500 mJ | 1000 mJ | 500 mJ |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 400 V | 1000 V | 500 V | 1000 V |
| 最大漏极电流 (Abs) (ID) | 24 A | 10 A | 22 A | 10 A |
| 最大漏极电流 (ID) | 24 A | 10 A | 22 A | 10 A |
| 最大漏源导通电阻 | 0.2 Ω | 1.3 Ω | 0.27 Ω | 1.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 165 W | 165 W | 165 W | 165 W |
| 最大功率耗散 (Abs) | 165 W | 165 W | 165 W | 165 W |
| 最大脉冲漏极电流 (IDM) | 92 A | 30 A | 85 A | 30 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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