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OM6023SCV

产品描述Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN
产品类别分立半导体    晶体管   
文件大小12KB,共1页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
下载文档 详细参数 选型对比 全文预览

OM6023SCV概述

Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN

OM6023SCV规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
零件包装代码TO-259AA
包装说明FLANGE MOUNT, R-MSFM-P3
针数3
Reach Compliance Codecompliant
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压400 V
最大漏极电流 (ID)15 A
最大漏源导通电阻0.3 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-259AA
JESD-30 代码R-MSFM-P3
JESD-609代码e0
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
封装主体材料METAL
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)60 A
认证状态Not Qualified
表面贴装NO
端子面层TIN LEAD
端子形式PIN/PEG
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

下载PDF文档
OM6021SC OM6023SC
OM6022SC OM6024SC
POWER MOSFETS IN HERMETIC PACKAGE
100V Thru 500V, Up To 35 Amp, N-Channel
Power MOSFETs In JEDEC TO-259AA Package
FEATURES
Isolated Side-Tab Hermetic Metal Package
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM6021SC
OM6022SC
OM6023SC
OM6024SC
V
DS
100V
200V
400V
500V
R
DS(ON)
.065W
.095W
.3W
.4W
I
D
35A
30A
15A
13A
3.1
SCHEMATIC
PIN CONNECTION
1 Drain
2 Source
3 Gate
1
2
3
4 11 R2
Supersedes 1 08 R1
3.1 - 89

OM6023SCV相似产品对比

OM6023SCV OM6022SCV OM6021SCV OM6024SCV
描述 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN Power Field-Effect Transistor, 35A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, HERMETIC SEALED, TO-259AA, 3 PIN
是否无铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合
零件包装代码 TO-259AA TO-259AA TO-259AA TO-259AA
包装说明 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3
针数 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 400 V 200 V 100 V 500 V
最大漏极电流 (ID) 15 A 30 A 35 A 13 A
最大漏源导通电阻 0.3 Ω 0.095 Ω 0.065 Ω 0.4 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-259AA TO-259AA TO-259AA TO-259AA
JESD-30 代码 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3
JESD-609代码 e0 e0 e0 e0
元件数量 1 1 1 1
端子数量 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 METAL METAL METAL METAL
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED 235 NOT SPECIFIED 235
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 60 A 120 A 160 A 52 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 PIN/PEG PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 NOT SPECIFIED 30
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
厂商名称 International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon )

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