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OM60L60SBT

产品描述Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3
产品类别分立半导体    晶体管   
文件大小65KB,共2页
制造商Omnirel Corp
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OM60L60SBT概述

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3

OM60L60SBT规格参数

参数名称属性值
厂商名称Omnirel Corp
包装说明HERMETIC SEALED PACKAGE-3
Reach Compliance Codeunknown
其他特性FAST, HIGH RELIABILITY
外壳连接ISOLATED
最大集电极电流 (IC)75 A
集电极-发射极最大电压600 V
配置SINGLE WITH BUILT-IN DIODE
JESD-30 代码R-MSFM-D3
元件数量1
端子数量3
封装主体材料METAL
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装NO
端子形式SOLDER LUG
端子位置SINGLE
晶体管应用POWER CONTROL
晶体管元件材料SILICON

OM60L60SBT相似产品对比

OM60L60SBT OM45L120SBV OM45L120SBT OM60L60SBV OM35F120SBV OM35F120SBT OM50F60SBT 2SC2717M
描述 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3 Silicon NPN transistor in a SOT-23 Plastic Package
厂商名称 Omnirel Corp - - Omnirel Corp Omnirel Corp Omnirel Corp Omnirel Corp -
包装说明 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 -
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown -
其他特性 FAST, HIGH RELIABILITY FAST, HIGH RELIABILITY FAST, HIGH RELIABILITY FAST, HIGH RELIABILITY FAST, HIGH RELIABILITY, HIGH SPEED FAST, HIGH RELIABILITY, HIGH SPEED FAST, HIGH RELIABILITY, HIGH SPEED -
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
最大集电极电流 (IC) 75 A 70 A 70 A 75 A 70 A 70 A 75 A -
集电极-发射极最大电压 600 V 1200 V 1200 V 600 V 1200 V 1200 V 600 V -
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
JESD-30 代码 R-MSFM-D3 R-MSFM-D3 R-MSFM-D3 R-MSFM-D3 R-MSFM-D3 R-MSFM-D3 R-MSFM-D3 -
元件数量 1 1 1 1 1 1 1 -
端子数量 3 3 3 3 3 3 3 -
封装主体材料 METAL METAL METAL METAL METAL METAL METAL -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
表面贴装 NO NO NO NO NO NO NO -
端子形式 SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG -
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
晶体管应用 POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL -
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON -

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