NEC's
MEDIUM POWER NPN NE664M04
SILICON HIGH FRQUENCY TRANSISTOR
FEATURES
•
•
•
•
HIGH GAIN BANDWIDTH:
f
T
= 20 GHz
+0.30
HIGH LINEAR GAIN:
G
L
= 12 dB at 1.8 GHz
+0.40
-0.05
2
HIGH OUTPUT POWER:
P
-1dB
= 26 dBm at 1.8 GHz
2.05±0.1
1.25±0.1
2.0±0.1
1.25
0.65 0.65
0.65 0.65
LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
3
R57
DESCRIPTION
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz f
T
wafer process. With a transition frequency of
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even
with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or fixed
wireless applications.
The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package
1
+0.30
-0.05
(leads 1, 3 and ,4)
+0.01
0.59±0.05
4
PIN CONNECTIONS
1. Emitter
3. Emitter
2. Collector
4. Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
EIAJ
3
REGISTRATION NUMBER
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC
Current
1
Gain at V
CE
= 3 V, I
C
= 100 mA
dBm
dB
dBm
dB
%
GHz
pF
16
5.0
Output Power at 1 dB compression point at V
CE
= 3.6 V, I
CQ
= 4 mA,
f = 1.8 GHz, P
in
= 15 dBm, 1/2 Duty Cycle
Linear Gain at V
CE
= 3.6 V, I
CQ
= 20 mA, f = 1.8 GHz, P
in
= 0 dBm,
1/2 Duty Cycle
Maximum Available Power Gain
4
at V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
Collector Efficiency, 3.6 V, I
CQ
= 4 mA, f = 1.8 GHz, P
in
= 15 dBm,
1/2 Duty Cycle
Gain Bandwidth at V
CE
= 3 V, I
C
= 100 mA, f = 0.5 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
UNITS
nA
nA
40
60
26.0
12.0
12.0
6.5
60
20
1.0
1.5
MIN
NE664M04
M04
2SC5754
TYP
MAX
1000
1000
100
DC
I
EBO
h
FE
P
1dB
G
L
MAG
|S
21E
|
2
η
c
f
T
Cre
Notes:
1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4.
MAG = |S
21
|
|S
12
|
RF
(
K -
K
2
- 1
).
California Eastern Laboratories
+0.11
-0.05
+0.1
1.30
NE664M04
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
2
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
13
5.0
1.5
500
735
150
-65 to +150
ORDERING INFORMATION
PART NUMBER
NE664M04-T2-A
QUANTITY
3k pcs./reel
THERMAL RESISTANCE
SYMBOLS
R
th j-a
1
R
th j-a
2
PARAMETERS
UNITS RATINGS
170
570
Junction to Ambient Resistance
1
°C/W
Junction to Ambient Resistance
2
°C/W
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
Note:
1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
2. Stand alone device in free air.
APPLICATIONS
Bluetooth Power Class 1
f = 2.4 GHz
T80
R57
0 dBm
13 dBm
22 dBm
NE663M04
NE664M04
SS Cordless Phone
f = 2.4 GHz
R57
20 dBm
26 dBm
NE664M04
DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz
R55
R57
A
3
9Z
1
00
5 dBm
16 dBm
25 dBm
35 dBm
NE678M04
NE664M04
NE5520379A
(MOS FET)
Cordless Phone
f = 0.9 GHz
TH
R57
ñ3 dBm
9 dBm
25 dBm
NE68019
(3-pin TUSMM)
NE664M04
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Reverse Tramsfer Capacitance, C
re
(pF)
1000
2.0
f = 1 MHz
Total Power Dissipation, P
tot
(mW)
Mounted on Polyimide PCB
800
(38 x 38 mm, t = 0.4 mm)
735
1.5
600
1.0
400
205
Stand alone device
in free air
0.5
200
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature, T
A
(ºC)
Collector to Base Voltage, V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1000
100
10
1
0.1
0.01
0.001
0.5
V
CE
= 3 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
450
I
B
: 0.5 mA step
400
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
I
B
= 0.5 mA
5
6
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
350
300
250
200
150
100
50
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Voltage, V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
V
CE
= 3 V
DC Current Gain h
FE
100
10
1
10
100
1000
Collector Current, I
C
(mA)
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
25
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
35
V
CE
= 3 V
I
C
= 100 mA
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 3 V
f = 0.5 GHz
20
30
25
20
15
10
5
0
MSG
MAG
15
10
5
|
S
21e
|
2
1
10
0
1
10
100
1000
Collector Current, I
C
(mA)
Frequency, f (Hz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
V
CE
= 3 V
f = 1 GHz
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
V
CE
= 3 V
f = 2 GHz
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
15
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
MSG
MAG
15
MSG
10
MAG
|
S
21e
|
2
10
5
5
|
S
21e
|
2
0
1
10
100
1000
0
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
V
CE
= 3 V
f = 2.5 GHz
15
10
MSG
MAG
5
|
S
21e
|
2
0
1
10
100
1000
Collector Current, I
C
(mA)
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
25
20
G
P
15
10
5
0
-15
η
c
-10
-5
0
5
10
V
CE
= 3.2 V, f = 0.9 GHz
I
Cq
= 20 mA, 1/2 Duty
300
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
300
V
CE
= 3.2 V, f = 2.4 GHz
I
Cq
= 20 mA, 1/2 Duty
P
out
20
I
C
15
10
5
η
c
0
-5
G
P
150
100
50
0
25
200
250
Collector Current, I
C
(mA)
Collector Efficiency,
η
C
(%)
P
out
I
C
200
150
100
50
0
15
0
5
10
15
20
Input Power, P
in
(dBm)
Input Power, P
in
(dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
25
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
300
250
P
out
20
I
C
15
G
P
10
5
η
c
0
-10
-5
0
5
10
15
0
20
100
50
150
200
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
25
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
P
out
20
I
C
15
G
P
10
5
η
c
0
-10
-5
0
5
10
15
0
20
150
100
50
200
300
250
Collector Current, I
C
(mA)
Collector Efficiency,
η
C
(%)
Input Power, P
in
(dBm)
Input Power, P
in
(dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
25
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
300
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
30
25
P
out
20
I
C
15
10
5
η
c
0
-10
G
P
150
100
50
0
20
200
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
300
250
Collector Current, I
C
(mA)
Collector Efficiency,
η
C
(%)
P
out
20
I
C
15
G
P
10
5
η
c
0
-10
-5
0
5
10
15
0
20
100
50
150
200
-5
0
5
10
15
Input Power, P
in
(dBm)
Input Power, P
in
(dBm)
Collector Current, I
C
(mA)
Collector Efficiency,
η
C
(%)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
250
Collector Current, I
C
(mA)
Collector Efficiency,
η
C
(%)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
Collector Current, I
C
(mA)
Collector Efficiency,
η
C
(%)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
250
25
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