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NE68939-T1FB: 产品描述RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, SC-61, 4 PIN; 产品类别分立半导体晶体管; 文件大小107KB，共12页; 制造商NEC(日电)

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NE68939-T1FB概述

RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, SC-61, 4 PIN

NE68939-T1FB规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	NEC(日电)
包装说明	SC-61, 4 PIN
Reach Compliance Code	compliant
外壳连接	COLLECTOR
最大集电极电流 (IC)	0.15 A
集电极-发射极最大电压	6 V
配置	SINGLE
最高频带	L BAND
JESD-30 代码	R-PDSO-G4
JESD-609代码	e0
元件数量	1
端子数量	4
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

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DATA SHEET

SILICON TRANSISTOR

NE68939

NPN SILICON EPITAXIAL TRANSISTOR

FOR L-BAND LOW-POWER AMPLIFIER

The NE68939 is ideal for the driver stage amplifier in 1.9GHz-band digital

cordless phones (DECT, PHS, etc.).

PACKAGE DRAWING

(Unit: mm)

0.4

+0.1

–0.05

2.8

+0.2

–0.3

1.5

+0.2

–0.1

FEATURES

• P

–1

= 24 dBm TYP.

2.9±0.2

(1.8)

0.85 0.95

@f = 1.9 GHz, V

= 3.6 V, I

= 1 mA (Class AB), Duty = 1/8

• 4-Pin Mini Mold Package

EIAJ: SC-61

0.4

+0.1

–0.05

T-89

0.6

+0.1

–0.05

+0.1

–0.05

ORDERING INFORMATION

Part Number

NE68939-T1

Quantity

3 Kpcs/Reel

Packing Style

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face

to perforation side of the tape.

5°

+0.1

–0.06

1.1

+0.2

–0.1

0.8

0.4

0 to 0.1

5°

Remark

If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (T

= 25

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Symbol

CBO

CEO

EBO

Rating

9.0

6.0

2.0

150

200 (CW)

1.0 (duty = 1/8)

Note

2.5 (duty = 1/24)

Note

Junction Temperature

Storage Temperature

stg

150

–65 to +150

Unit

˚C

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Note

Pulse period is 10 msec or less.

Document No. P11051EJ1V0DS00 (1st edition)

Date Published December 1995 P

Printed in Japan

0.16

(1.9)

1995

NE68939-T1FB相似产品对比

	NE68939-T1FB	NE68939-T1FB-A
描述	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, SC-61, 4 PIN	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, SC-61, 4 PIN
是否Rohs认证	不符合	符合
厂商名称	NEC(日电)	NEC(日电)
包装说明	SC-61, 4 PIN	SC-61, 4 PIN
Reach Compliance Code	compliant	compliant
外壳连接	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	0.15 A	0.15 A
集电极-发射极最大电压	6 V	6 V
配置	SINGLE	SINGLE
最高频带	L BAND	L BAND
JESD-30 代码	R-PDSO-G4	R-PDSO-G4
元件数量	1	1
端子数量	4	4
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	260
极性/信道类型	NPN	NPN
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	10
晶体管应用	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON

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