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NESG3032M14-T3-A: 产品描述RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon Germanium, NPN, LEAD FREE, LEADLESSS, MINIMOLD, M14, 1208, 4 PIN; 产品类别分立半导体晶体管; 文件大小262KB，共6页; 制造商NEC(日电); 标准

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NESG3032M14-T3-A概述

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon Germanium, NPN, LEAD FREE, LEADLESSS, MINIMOLD, M14, 1208, 4 PIN

NESG3032M14-T3-A规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	NEC(日电)
包装说明	LEAD FREE, LEADLESSS, MINIMOLD, M14, 1208, 4 PIN
Reach Compliance Code	compliant
最大集电极电流 (IC)	0.035 A
基于收集器的最大容量	0.25 pF
集电极-发射极最大电压	4.3 V
配置	SINGLE
最高频带	S BAND
JESD-30 代码	R-PDSO-F4
JESD-609代码	e6
湿度敏感等级	1
元件数量	1
端子数量	4
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN BISMUTH
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	10
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON GERMANIUM

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NPN SILICON GERMANIUM RF TRANSISTOR

NESG3032M14

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)

FEATURES

• The device is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP. @ V

= 2 V, I

= 6 mA, f = 2.0 GHz

• Maximum stable power gain: MSG = 20.5 dB TYP. @ V

= 2 V, I

= 15 mA, f = 2.0 GHz

• SiGe HBT technology (UHS3) adopted: f

max

= 110 GHz

• 4-pin lead-less minimold (M14, 1208 package)

ORDERING INFORMATION

Part Number

NESG3032M14

Order Number

NESG3032M14-A

Package

4-pin lead-less minimold

(M14, 1208 package)

NESG3032M14-T3 NESG3032M14-T3-A

(Pb-Free)

Quantity

50 pcs

(Non reel)

10 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 4 (Emitter) face the

perforation side of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

tot

Note

Ratings

12.0

4.3

1.5

150

−65

to +150

Unit

°C

stg

Note

Mounted on 1.08 cm

1.0 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10575EJ01V0DS (1st edition)

Date Published July 2005 CP(K)

NEC Compound Semiconductor Devices, Ltd. 2005

NESG3032M14

When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority

having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

•

The information in this document is current as of July, 2005. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers

agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

recommended applications of a semiconductor product depend on its quality grade, as indicated below.

Customers must check the quality grade of each semiconductor product before using it in a particular

application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness

to support a given application.

(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4 - 0110

Data Sheet PU10575EJ01V0DS

NESG3032M14-T3-A相似产品对比

	NESG3032M14-T3-A	2N661	NESG3032M14-A	NESG3032M14
描述	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon Germanium, NPN, LEAD FREE, LEADLESSS, MINIMOLD, M14, 1208, 4 PIN	GERMABIUM PNP MESA TRANSISTORS	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon Germanium, NPN, LEAD FREE, LEADLESSS, MINIMOLD, M14, 1208, 4 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon Germanium, NPN, LEAD FREE, LEADLESSS, MINIMOLD, M14, 1208, 4 PIN
是否Rohs认证	符合	-	符合	不符合
厂商名称	NEC(日电)	-	NEC(日电)	NEC(日电)
包装说明	LEAD FREE, LEADLESSS, MINIMOLD, M14, 1208, 4 PIN	-	LEAD FREE, LEADLESSS, MINIMOLD, M14, 1208, 4 PIN	SMALL OUTLINE, R-PDSO-F4
Reach Compliance Code	compliant	-	compliant	compli
最大集电极电流 (IC)	0.035 A	-	0.035 A	0.035 A
基于收集器的最大容量	0.25 pF	-	0.25 pF	0.25 pF
集电极-发射极最大电压	4.3 V	-	4.3 V	4.3 V
配置	SINGLE	-	SINGLE	SINGLE
最高频带	S BAND	-	S BAND	S BAND
JESD-30 代码	R-PDSO-F4	-	R-PDSO-F4	R-PDSO-F4
JESD-609代码	e6	-	e6	e0
元件数量	1	-	1	1
端子数量	4	-	4	4
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	-	260	NOT SPECIFIED
极性/信道类型	NPN	-	NPN	NPN
认证状态	Not Qualified	-	Not Qualified	Not Qualified
表面贴装	YES	-	YES	YES
端子面层	TIN BISMUTH	-	TIN BISMUTH	TIN LEAD
端子形式	FLAT	-	FLAT	FLAT
端子位置	DUAL	-	DUAL	DUAL
处于峰值回流温度下的最长时间	10	-	10	NOT SPECIFIED
晶体管应用	AMPLIFIER	-	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON GERMANIUM	-	SILICON GERMANIUM	SILICON GERMANIUM

NESG3032M14-T3-A

NESG3032M14-T3-A在线购买

NESG3032M14-T3-A概述

NESG3032M14-T3-A规格参数

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