36A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | TO-252AA |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 4 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 其他特性 | TAPE AND REEL |
| 雪崩能效等级（Eas） | 108 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V |
| 最大漏极电流 (Abs) (ID) | 36 A |
| 最大漏极电流 (ID) | 36 A |
| 最大漏源导通电阻 | 0.014 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 120 W |
| 最大脉冲漏极电流 (IDM) | 144 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| NP36N055IHE-E2-AZ | NP36N055ILE-E1-AZ | NP36N055ILE-E2-AZ | NP36N055IHE-E1-AZ | NP36N055SHE-E2-AY | NP36N055SHE-AY | NP36N055HHE-AY | NP36N055IHE-AZ | NP36N055IHE-E1-AY | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | 36A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN | 36A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN | 36A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN | 36A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, TO-252, MP-3Z, 3 PIN | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252AA | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-251 | NP36N055IHE-AZ | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,36A I(D),TO-252 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| Reach Compliance Code | compliant | compliant | compliant | unknown | compliant | compliant | unknown | unknown | unknown |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | Single | Single | Single | - | Single |
| 最大漏极电流 (Abs) (ID) | 36 A | 36 A | 36 A | - | 36 A | 36 A | 36 A | - | 36 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | - | 175 °C | 175 °C | 175 °C | - | 175 °C |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
| 最大功率耗散 (Abs) | 120 W | 120 W | 120 W | - | 120 W | 120 W | 120 W | - | 120 W |
| 表面贴装 | YES | YES | YES | YES | YES | YES | NO | - | YES |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
