DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
• Gate Length: Lg
≤
0.20
µ
m
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Width : Wg = 160
µ
m
ORDERING INFORMATION (PLAN)
Part Number
NE3210S01-T1
Supplying Form
ON
Re
p
Parameter
I
D
I
G
P
tot
T
ch
T
stg
en
t:
Ratings
4.0
–3.0
IDSS
100
165
125
–65 to +125
MIN.
1
5
–
TYP.
2
10
–
TI
Tape & reel 1 000 pcs./reel
Tape & reel 4 000 pcs./reel
NE3210S01-T1B
Remark
For sample order, please contact your
nearby
sales office. (Part number for sample order: NE3210S01-A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Symbol
V
DS
lac
em
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
SC
ro
p
Total Power Dissipation
Channel Temperature
Storage Temperature
-In
DI
D
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Characteristics
Symbol
V
DS
I
D
P
in
MAX.
3
15
0
Unit
V
mA
dBm
Drain to Source Voltage
Drain Current
Input Power
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
The mark
NU
CE
E
35
D
12
K
Marking
K
Unit
V
V
mA
V
GS
NE3210S01
µ
A
mW
°C
°C
shows major revised points.
2
NE3210S01
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C)
Characteristics
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
V
GS
= –3 V
V
DS
= 2 V, I
DS
= 100
µ
A
V
DS
= 2 V, I
DS
= 10 mA
–0.2
40
–
–0.7
55
–2.0
–
V
DS
= 2 V, I
DS
= 10 mA
f = 12 GHz
0.35
0.45
–
12.0
13.5
DI
D
SC
ro
p
2
-In
ON
Re
p
lac
em
Data Sheet P14067EJ2V0DS00
en
t:
TI
2
V
mS
dB
dB
V
DS
= 2 V, V
GS
= 0 V
NU
CE
E
35
D
12
K
Test Conditions
MIN.
–
TYP.
0.5
40
MAX.
10
Unit
µ
A
15
70
mA
NE3210S01
TYPICAL CHARACTERISTICS (T
A
= +25 °C)
250
Total Power Dissipation P
tot
(mW)
200
150
100
NU
CE
E
35
D
12
K
100
80
Drain Current I
D
(mA)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
40
50
20
0
50
100
150
200
250
0
1.0
2
V
GS
= 0 V
–0.2 V
–0.4 V
–0.6 V
2.0
V
DS
= 2 V
I
D
= 10 mA
MAG.
8 10
14
20 30
Ambient Temperature T
A
(°C)
Drain to Source Voltage V
DS
(V)
TI
V
DS
= 2 V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
Maximum Stable Gain MSG. (dB)
Maximum Available Gain MAG. (dB)
Forward Insertion Gain |S
21s
|
2
(dB)
60
Drain Current I
D
(mA)
en
t:
20
16
12
8
4
1
2
24
MSG.
20
lac
em
0
40
ON
Re
p
–1.0
Gate to Source Voltage V
GS
(V)
|S
21S
|
2
0
–2.0
SC
ro
p
4
6
Frequency f (GHz)
DI
D
-In
Data Sheet P14067EJ2V0DS00
3
NE3210S01
Gain Calculations
MSG. =
K=
MAG. =
S
21
S
12
k
±
k
2
– 1
∆
= S
11
·S
22
– S
21
·S
12
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
G
a
V
DS
= 2 V
I
D
= 10 mA
NU
CE
E
35
D
12
K
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
24
V
DS
= 2 V
f = 12 GHz
15
14
13
12
11
G
a
20
16
Associated Gain G
a
(dB)
Noise Figure NF (dB)
S
21
S
12
1 + |
∆
|
2
– |S
11
|
2
– |S
22
|
2
2 |S
12
| |S
21
|
Noise Figure NF (dB)
2.0
1.5
1.0
0.5
1.0
12
0.5
NF
0
1
2
4
6
8
en
t:
0
10
TI
14
4
20 30
NF
20
30
DI
D
SC
ro
p
4
-In
ON
Re
p
Frequency f (GHz)
8 10
Drain Current I
D
(mA)
lac
em
Data Sheet P14067EJ2V0DS00
Associated Gain G
a
(dB)
2
NE3210S01
S-PARAMETERS
MAG. AND ANG.
V
DS
= 2 V, I
D
= 10 mA
FREQUENCY
MHz
2000.0000
2500.0000
3000.0000
3500.0000
4000.0000
4500.0000
5000.0000
5500.0000
6000.0000
6500.0000
7000.0000
7500.0000
8000.0000
8500.0000
9000.0000
9500.0000
10000.0000
10500.0000
11000.0000
11500.0000
12000.0000
12500.0000
13000.0000
13500.0000
14000.0000
14500.0000
15000.0000
15500.0000
16000.0000
16500.0000
17000.0000
17500.0000
18000.0000
S
11
MAG.
0.973
0.951
0.935
0.914
0.893
0.872
0.848
0.829
0.814
0.781
0.745
0.699
0.660
0.635
0.602
0.578
0.554
0.537
0.507
0.477
0.445
0.428
0.418
0.430
0.453
0.486
0.513
0.526
0.531
0.539
0.533
0.537
0.546
ANG.
–21.2
–27.7
–34.3
–40.6
–46.3
–51.4
–55.9
–60.0
–64.8
–70.1
–76.3
–82.7
–90.3
–99.8
–109.5
–118.3
–127.2
–135.2
–144.1
–154.0
–166.2
–179.6
165.3
150.6
137.9
126.7
116.7
108.4
100.4
91.1
82.1
72.2
64.7
NU
CE
E
35
D
12
K
S
21
S
12
S
22
MAG.
ANG.
MAG.
ANG.
MAG.
4.450
4.453
4.439
4.389
4.314
4.230
4.158
4.118
4.130
4.149
4.180
4.170
4.184
4.197
4.171
4.109
4.063
4.030
3.978
3.950
3.906
3.851
3.762
3.642
3.517
3.395
3.259
3.150
3.046
2.911
2.739
2.573
2.400
154.2
147.1
140.3
133.5
127.3
121.1
115.3
109.9
104.3
98.3
91.8
85.3
78.7
71.7
64.7
57.9
51.3
44.6
37.6
30.8
23.5
16.0
8.5
1.1
–6.1
–13.0
–19.9
–26.4
–33.3
–40.7
–48.0
–54.3
–59.4
0.022
0.028
0.033
0.038
0.042
0.045
0.048
0.050
0.053
0.058
0.063
0.065
0.070
0.074
0.077
0.081
0.086
0.092
0.095
0.099
0.103
0.108
0.110
0.111
0.110
0.112
0.111
0.113
0.110
0.112
0.111
0.110
0.106
75.9
71.2
66.7
63.5
57.7
54.5
49.7
48.2
46.1
42.8
40.4
36.6
33.7
29.4
25.4
22.3
18.9
15.3
10.8
5.9
2.1
–2.2
–6.6
–10.3
–14.8
–19.6
–22.0
–25.6
–29.3
–32.1
–36.1
–40.1
–41.6
0.550
0.538
0.523
0.511
0.500
0.495
0.492
0.484
0.482
0.472
0.450
0.423
0.393
0.360
0.327
0.290
0.268
0.251
0.233
0.224
0.211
0.187
0.157
0.123
0.110
0.125
0.161
0.207
0.255
0.299
0.329
0.343
0.347
DI
D
SC
ro
p
-In
ON
Re
p
lac
em
en
t:
TI
2
ANG.
–15.2
–19.9
–25.2
–30.3
–34.9
–39.1
–42.9
–45.8
–48.8
–52.6
–56.3
–59.2
–62.6
–67.3
–72.4
–78.8
–86.8
–96.2
–105.3
–114.3
–123.1
–132.5
–146.2
–164.0
169.0
141.4
121.7
113.4
109.0
105.4
101.5
95.9
90.6
Data Sheet P14067EJ2V0DS00
5
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