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HB56UW472EJNB-6L: 产品描述EDO DRAM Module, 4MX72, 60ns, CMOS, DIMM-168; 产品类别存储存储; 文件大小495KB，共35页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HB56UW472EJNB-6L概述

EDO DRAM Module, 4MX72, 60ns, CMOS, DIMM-168

HB56UW472EJNB-6L规格参数

参数名称	属性值
厂商名称	Hitachi （Renesas ）
零件包装代码	DIMM
包装说明	DIMM, DIMM168
针数	168
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	EDO
最长访问时间	60 ns
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N168
内存密度	301989888 bit
内存集成电路类型	EDO DRAM MODULE
内存宽度	72
功能数量	1
端口数量	1
端子数量	168
字数	4194304 words
字数代码	4000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	4MX72
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM168
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	3.3 V
认证状态	Not Qualified
刷新周期	2048
座面最大高度	25.4 mm
自我刷新	YES
最大待机电流	0.0018 A
最大压摆率	1.62 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL

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HB56UW472EJNB Series,

HB56UW464EJNB Series

4,194,304-word

72-bit High Density Dynamic RAM Module

4,194,304-word

64-bit High Density Dynamic RAM Module

ADE-203-723A (Z)

Rev.1.0

Feb. 20, 1997

Description

The HB56UW472EJNB, HB56UW464EJNB belong to 8 Byte DIMM (Dual In-line Memory Module)

family, and have been developed as an optimized main memory solution for 4 and 8 Byte processor

applications. The HB56UW472EJNB is a 4M

72 dynamic RAM module, mounted 18 pieces of 16-Mbit

DRAM (HM51W17405) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence

Detect (PD). The HB56UW464EJNB is a 4M

64 dynamic RAM module, mounted 16 pieces of 16-Mbit

DRAM (HM51W17405) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence

Detect (PD). The HB56UW472EJNB, HB56UW464EJNB offer Extended Data Out (EDO) Page Mode as

a high speed access mode. An outline of the HB56UW472EJNB, HB56UW464EJNB is 168-pin socket

type package (dual lead out). Therefore, the HB56UW472EJNB, HB56UW464EJNB make high density

mounting possible without surface mount technology. The HB56UW472EJNB, HB56UW464EJNB

provide common data inputs and outputs. Decoupling capacitors are mounted on the module board.

Features

•

168-pin socket type package (Dual lead out)



Outline: 133.35 mm (Length)

25.40 mm (Height)

9.00 mm (Thickness)



Lead pitch: 1.27 mm

•

Single 3.3 V (±0.3 V) supply

•

High speed



Access time: t

RAC

= 50/60/70ns (max)

CAC

= 13/15/18ns (max)

•

Low power dissipation



Active mode: 6.48/5.83/5.18 W (max) (HB56UW472EJNB Series)

5.76/5.18/4.61 W (max) (HB56UW464EJNB Series)



Standby mode (TTL): 129.6 mW (max) (HB56UW472EJNB Series)

(TTL): 115.2 mW (max) (HB56UW464EJNB Series)

(CMOS): 6.48 mW (max) (L-version) (HB56UW472EJNB Series)

(CMOS): 5.76 mW (max) (L-version) (HB56UW464EJNB Series)

推荐资源

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