Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Integrated Silicon Solution ( ISSI ) |
零件包装代码 | TSOP2 |
包装说明 | TSOP2, TSSOP86,.46,20 |
针数 | 86 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 5.4 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 166 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 1,2,4,8 |
JESD-30 代码 | R-PDSO-G86 |
JESD-609代码 | e3 |
长度 | 22.22 mm |
内存密度 | 134217728 bit |
内存集成电路类型 | SYNCHRONOUS DRAM |
内存宽度 | 32 |
湿度敏感等级 | 3 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 86 |
字数 | 4194304 words |
字数代码 | 4000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 4MX32 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSOP2 |
封装等效代码 | TSSOP86,.46,20 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE |
峰值回流温度(摄氏度) | 260 |
电源 | 3.3 V |
认证状态 | Not Qualified |
刷新周期 | 4096 |
座面最大高度 | 1.2 mm |
自我刷新 | YES |
连续突发长度 | 1,2,4,8,FP |
最大待机电流 | 0.001 A |
最大压摆率 | 0.18 mA |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Matte Tin (Sn) - annealed |
端子形式 | GULL WING |
端子节距 | 0.5 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 10 |
宽度 | 10.16 mm |
IS42S32400E-6TLI | IS42S32400E-7TL | IS42S32400E-7TLI | IS42S32400E-7TLI-TR | IS42S32400E-7TL-TR | IS42S32400E-6TL | IS42S32400E-6BL | IS42S32400E-7BLI | IS42S32400E-7BL | |
---|---|---|---|---|---|---|---|---|---|
描述 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
包装说明 | TSOP2, TSSOP86,.46,20 | TSOP2, TSSOP86,.46,20 | TSOP2, TSSOP86,.46,20 | TSOP2, | TSSOP, | TSOP2, TSSOP86,.46,20 | TFBGA, BGA90,9X15,32 | TFBGA, BGA90,9X15,32 | TFBGA, BGA90,9X15,32 |
Reach Compliance Code | compliant | compli | compli | compli | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-PDSO-G86 | R-PDSO-G86 | R-PDSO-G86 | R-PDSO-G86 | R-PDSO-G86 | R-PDSO-G86 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 |
JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 | e1 | e1 | e1 |
长度 | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | 13 mm | 13 mm | 13 mm |
内存密度 | 134217728 bit | 134217728 bi | 134217728 bi | 134217728 bi | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit |
内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 86 | 86 | 86 | 86 | 86 | 86 | 90 | 90 | 90 |
字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 70 °C | 85 °C | 85 °C | 70 °C | 70 °C | 70 °C | 85 °C | 70 °C |
组织 | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSSOP | TSOP2 | TFBGA | TFBGA | TFBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
端子面层 | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) - annealed | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | BALL | BALL | BALL |
端子节距 | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 10 | 10 | 10 | 40 | 10 | 10 | 10 | 10 | 10 |
宽度 | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 8 mm | 8 mm | 8 mm |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
厂商名称 | Integrated Silicon Solution ( ISSI ) | - | - | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
零件包装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | - | TSOP2 | BGA | BGA | BGA |
针数 | 86 | 86 | 86 | 86 | - | 86 | 90 | 90 | 90 |
最大时钟频率 (fCLK) | 166 MHz | 143 MHz | 143 MHz | - | - | 166 MHz | 166 MHz | 143 MHz | 143 MHz |
I/O 类型 | COMMON | COMMON | COMMON | - | - | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | - | - | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | - | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装等效代码 | TSSOP86,.46,20 | TSSOP86,.46,20 | TSSOP86,.46,20 | - | - | TSSOP86,.46,20 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 |
电源 | 3.3 V | 3.3 V | 3.3 V | - | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 4096 | 4096 | 4096 | - | - | 4096 | 4096 | 4096 | 4096 |
连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | - | - | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
最大待机电流 | 0.001 A | 0.001 A | 0.001 A | - | - | 0.001 A | 0.001 A | 0.001 A | 0.001 A |
最大压摆率 | 0.18 mA | 0.16 mA | 0.16 mA | - | - | 0.18 mA | 0.18 mA | 0.16 mA | 0.16 mA |
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