DATA SHEET
book, halfpage
M3D071
BFG93A; BFG93A/X
NPN 6 GHz wideband transistors
Product specification
Supersedes data of 1995 Sep 25
1998 Sep 23
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
FEATURES
•
High power gain
•
Low noise figure
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.
PINNING
PIN
BFG93A
1
2
3
4
collector
base
emitter
emitter
Top view
MSB014
DESCRIPTION
handbook, 2 columns
4
3
1
2
BFG93A/X
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT143B.
MARKING
TYPE NUMBER
BFG93A
BFG93A/X
CODE
R8
V15
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral
power gain
T
s
≤
85
°C
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 1 GHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 2 GHz
F
noise figure
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
open base
CONDITIONS
open emitter
−
−
−
−
−
4.5
−
−
−
MIN.
−
−
−
−
0.6
6
16
10
1.7
TYP.
MAX.
15
12
35
300
−
−
−
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 30 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 1 GHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 2 GHz
F
noise figure
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
MIN.
−
40
−
−
−
4.5
−
−
−
−
TYP.
−
90
0.9
1.9
0.6
6
16
10
1.7
2.3
MAX.
50
−
−
−
−
−
−
−
−
−
pF
pF
pF
GHz
dB
dB
dB
dB
UNIT
nA
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
290
UNIT
K/W
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction operating temperature
T
s
≤
85
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
15
12
2
35
300
+150
175
V
V
V
mA
mW
°C
°C
UNIT
S
21 2
=
10 log -------------------------------------------------------------- dB.
(
1
–
S
11 2
) (
1
–
S
22 2
)
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
MBG245
400
handbook, halfpage
Ptot
(mW)
300
handbook, halfpage
120
MCD087
h FE
80
200
40
100
0
0
50
100
150
Ts (
o
C)
200
0
0
10
20
IC (mA)
30
V
CE
= 5 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current; typical values.
1.0
handbook, halfpage
C re
(pF)
0.8
MCD088
handbook, halfpage
8
MCD089
fT
(GHz)
6
0.6
4
0.4
2
0.2
0
0
4
8
12
VCB (V)
16
0
0
10
20
30
I C (mA)
40
I
C
= i
c
= 0; f = 1 MHz.
V
CE
= 5 V; T
amb
= 25
°C;
f = 500 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
1998 Sep 23
4
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
handbook, halfpage
30
MCD090
handbook, halfpage
30
MCD091
gain
(dB)
20
MSG
gain
(dB)
G UM
20
MSG
G UM
10
10
0
0
10
20
30
I C (mA)
40
0
0
10
20
30
I C (mA)
40
V
CE
= 8 V; f = 500 MHz.
V
CE
= 8 V; f = 1 GHz.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
Gain as a function of collector current;
typical values.
handbook, halfpage
50
MCD092
handbook, halfpage
50
MCD093
gain
(dB)
gain
(dB)
40
G UM
40
MSG
G UM
30
MSG
30
20
20
G max
10
G max
10
0
10
10
2
10
3
f
(MHz)
10
4
0
10
10
2
10
3
f (MHz)
10
4
V
CE
= 8 V; I
C
= 10 mA.
V
CE
= 8 V; I
C
= 30 mA.
Fig.8
Gain as a function of frequency; typical
values.
Fig.9
Gain as a function of frequency; typical
values.
1998 Sep 23
5
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