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JANTXV1N4580AUR

产品描述Zener Diode, 6.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2
产品类别分立半导体    二极管   
文件大小463KB,共4页
制造商Cobham PLC
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JANTXV1N4580AUR概述

Zener Diode, 6.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2

JANTXV1N4580AUR规格参数

参数名称属性值
厂商名称Cobham PLC
包装说明O-LELF-R2
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-213AA
JESD-30 代码O-LELF-R2
JESD-609代码e0
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
最大功率耗散0.5 W
认证状态Not Qualified
参考标准MIL-19500/452
标称参考电压6.4 V
表面贴装YES
技术ZENER
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
电压温度Coeff-Max0.64 mV/°C
最大电压容差5%

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Temperature Compensated
Zener Reference Diode Series
1N4565AUR thru 1N4584AUR, 1N4565AUR-1 thru 1N4584AUR-1
Features
Available in JAN, JANTX , JANTXV and JANS per MIL-PRF-19500/452
6.4 Volt Nominal Zener Voltage +5 %
Metallurgically Bonded
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
lR = 2 μA @ 25°C & VR = 3 Vdc
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
JEDEC
Type
Number
mA
1N4565UR
1N4565AUR
1N4566UR
1N4566AUR
1N4567UR
1N4567AUR
1N4568UR
1N4568AUR
1N4569UR
1N4569AUR
1N4570UR
1N4570AUR
1N4571UR
1N4571AUR
1N4572UR
1N4572AUR
1N4573UR
1N4573AUR
1N4574UR
1N4574AUR
1N4575UR
1N4575AUR
1N4576UR
1N4576AUR
1N4577UR
1N4577AUR
1N4578UR
1N4578AUR
1N4579UR
1N4579AUR
1N4580UR
1N4580AUR
1N4581UR
1N4581AUR
1N4582UR
1N4582AUR
1N4583UR
1N4583AUR
1N4584UR
1N4584AUR
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
%/°C
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
Zener
Test
Current
Effective
Temperature
Coefficient
Voltage
Temperature
Stability
Δ
V maximum
ZT
(Note1)
mV
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
°C
0 to +75
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to + 100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to + 75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
0 to +75°C
-55 to +100°C
Temperature
Range
Maximum Dynamic
Zener
Impeadance
(Note 2)
Ohms
200
200
200
200
200
200
200
200
200
200
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
50
50
50
50
25
25
25
25
25
25
25
25
25
25
NOTE 1:
NOTE 2:
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV at any discrete temperature between the established limits, per JEDEC standard No. 5.
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to 10% of lZT.
Revision Date: 11/6/2014
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