Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | TO-257AA, 3 PIN |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | RADIATION HARDENED |
| 雪崩能效等级（Eas） | 117 mJ |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (Abs) (ID) | 18 A |
| 最大漏极电流 (ID) | 18 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-257AA |
| JESD-30 代码 | R-XSFM-P3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 75 W |
| 最大脉冲漏极电流 (IDM) | 72 A |
| 认证状态 | Qualified |
| 参考标准 | MIL-19500/702 |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON |
| JANTXVR2N7482T3 | JANTXVR2N7483T3 | JANSR2N7483T3 | JANSH2N7484T3 | JANSH2N7482T3 | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Power Field-Effect Transistor, 18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | Power Field-Effect Transistor, 18A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Power Field-Effect Transistor, 18A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3 PIN |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| 包装说明 | TO-257AA, 3 PIN | TO-257AA, 3 PIN | HERMETIC SEALED, CERAMIC PACKAGE-3 | TO-257AA, 3 PIN | HERMETIC SEALED, CERAMIC PACKAGE-3 PIN |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 117 mJ | 110 mJ | 110 mJ | 87 mJ | 177 mJ |
| 配置 | SINGLE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 60 V | 60 V | 100 V | 30 V |
| 最大漏极电流 (Abs) (ID) | 18 A | 18 A | 18 A | 18 A | 18 A |
| 最大漏极电流 (ID) | 18 A | 18 A | 18 A | 18 A | 18 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
| JESD-30 代码 | R-XSFM-P3 | R-XSFM-P3 | R-CSFM-P3 | S-XSFM-P3 | S-CSFM-P3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 75 W | 75 W | 75 W | 75 W | 75 W |
| 最大脉冲漏极电流 (IDM) | 72 A | 72 A | 72 A | 72 A | 72 A |
| 认证状态 | Qualified | Qualified | Qualified | Qualified | Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 其他特性 | RADIATION HARDENED | RADIATION HARDENED | ULTRA-LOW RESISTANCE | - | - |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | - |
| 参考标准 | MIL-19500/702 | MIL-19500/702 | MIL-19500; RH - 100K Rad(Si) | - | - |
| 最大漏源导通电阻 | - | - | 0.04 Ω | 0.07 Ω | 0.03 Ω |
| 晶体管应用 | - | - | SWITCHING | SWITCHING | SWITCHING |
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