Datasheet> 器件分类 > 分立半导体> 晶体管> CMPDM8002ATR13

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CMPDM8002ATR13: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小324KB，共2页; 制造商Central Semiconductor; 标准

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CMPDM8002ATR13概述

Transistor

CMPDM8002ATR13规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	,
Reach Compliance Code	compliant
配置	Single
最大漏极电流 (Abs) (ID)	0.28 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e3
湿度敏感等级	1
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	0.35 W
表面贴装	YES
端子面层	Matte Tin (Sn)

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CMPDM8002A

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPDM8002A

is an Enhancement-mode P-Channel Field Effect

Transistor, manufactured by the P-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications.

MARKING CODE: C802A

FEATURES:

• Low rDS(ON)

• Low VDS(ON)

• Low threshold voltage

• Fast switching

• Logic level compatibility

SYMBOL

VDS

VDG

VGS

IDM

ISM

TJ, Tstg

280

1.5

350

-65 to +150

357

MAX

100

1.0

500

1.0

2.5

1.5

0.15

1.3

2.5

4.0

3.0

5.0

UNITS

°C

°C/W

UNITS

μA

SOT-23 CASE

APPLICATIONS:

• Load/Power switches

• Power supply converter circuits

• Battery powered portable equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

IGSSF, IGSSR VGS=20V, VDS=0

IDSS

ID(ON)

BVDSS

VGS(th)

VDS(ON)

VSD

rDS(ON)

VDS=50V, VGS=0

VDS=50V, VGS=0, TJ=125°C

VGS=10V, VDS=10V

VGS=0, ID=10μA

VDS=VGS, ID=250μA

VGS=10V, ID=500mA

VGS=5.0V, ID=50mA

VGS=0, IS=115mA

VGS=10V, ID=500mA

VGS=10V, ID=500mA, TJ=125°C

VGS=5.0V, ID=50mA

VGS=5.0V, ID=50mA, TJ=125°C

R1 (27-January 2010)

CMPDM8002ATR13相似产品对比

	CMPDM8002ATR13	CMPDM8002ATR13LEADFREE	CMPDM8002ATRLEADFREE	CMPDM8002ABKLEADFREE	CMPDM8002ATR	CMPDM8002ABK
描述	Transistor	Transistor	Transistor	Transistor	Transistor	Transistor
是否Rohs认证	符合	符合	符合	符合	符合	符合
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
配置	Single	Single	Single	Single	Single	Single
最大漏极电流 (Abs) (ID)	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
表面贴装	YES	YES	YES	YES	YES	YES

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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