Datasheet> 器件分类 > 分立半导体> 晶体管> CMPT7410TR

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CMPT7410TR: 产品描述Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; 产品类别分立半导体晶体管; 文件大小388KB，共2页; 制造商Central Semiconductor

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CMPT7410TR概述

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

CMPT7410TR规格参数

参数名称	属性值
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	25 V
配置	SINGLE
最小直流电流增益 (hFE)	50
JESD-30 代码	R-PDSO-G3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz

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CMPT7410

SURFACE MOUNT

LOW VCE(SAT)

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT7410 type

is a PNP Low VCE(SAT) silicon transistor manufactured

by the epitaxial planar process and epoxy molded in an

SOT-23 surface mount package. This device is designed

for battery driven, handheld devices requiring high

current and Low VCE(SAT).

MARKING CODE: C741

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ, Tstg

6.0

1.0

1.5

350

-65 to +150

357

MAX

100

UNITS

°C

°C/W

UNITS

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless

SYMBOL

TEST CONDITIONS

ICBO

VCB=40V

IEBO

VEB=6.0V

BVCBO

IC=100μA

BVCEO

IC=10mA

BVEBO

IE=100μA

VCE(SAT)

IC=50mA, IB=5.0mA

VCE(SAT)

IC=100mA, IB=10mA

VCE(SAT)

IC=200mA, IB=20mA

VCE(SAT)

IC=500mA, IB=50mA

VCE(SAT)

IC=800mA, IB=80mA

VCE(SAT)

IC=1.0A, IB=100mA

VBE(SAT)

IC=800mA, IB=80mA

VCE=1.0V, IC=10mA

VBE(ON)

hFE

VCE=1.0V, IC=10mA

hFE

VCE=1.0V, IC=100mA

hFE

VCE=1.0V, IC=500mA

hFE

VCE=1.0V, IC=1.0A

VCE=10V, IC=50mA, f=100MHz

Cob

VCB=10V, IE=0, f=1.0MHz

otherwise noted)

MIN

TYP

6.0

205

320

400

150

250

400

450

1.1

0.9

300

100

MHz

R2 (1-August 2011)

CMPT7410TR相似产品对比

	CMPT7410TR	CMPT7410TRLEADFREE	CMPT7410TR13LEADFREE	CMPT7410LEADFREE	CMPT7410BK
描述	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Transistor	Transistor	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-G3	,	,	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	1 A
配置	SINGLE	Single	Single	SINGLE	SINGLE
最小直流电流增益 (hFE)	50	100	100	50	50
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	PNP	PNP	PNP	PNP	PNP
表面贴装	YES	YES	YES	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
针数	3	-	-	3	3
ECCN代码	EAR99	-	-	EAR99	EAR99
集电极-发射极最大电压	25 V	-	-	25 V	25 V
JESD-30 代码	R-PDSO-G3	-	-	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e0	-	-	e3	e0
元件数量	1	-	-	1	1
端子数量	3	-	-	3	3
封装主体材料	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	-	SMALL OUTLINE	SMALL OUTLINE
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	-	0.35 W
认证状态	Not Qualified	-	-	Not Qualified	Not Qualified
端子面层	TIN LEAD	-	-	MATTE TIN (315)	TIN LEAD
端子形式	GULL WING	-	-	GULL WING	GULL WING
端子位置	DUAL	-	-	DUAL	DUAL
晶体管应用	SWITCHING	-	-	SWITCHING	SWITCHING
晶体管元件材料	SILICON	-	-	SILICON	SILICON
是否Rohs认证	-	符合	符合	符合	-

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