MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF18090B/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
•
GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18090BR3
MRF18090BSR3
1.90 - 1.99 GHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETS
CASE 465B - 03, STYLE 1
NI - 880
MRF18090BR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF18090BSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
250
1.43
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.7
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
MRF18090BR3 MRF18090BSR3
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 750 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common - Source Amplifier Power Gain @ 90 W (1)
(V
DD
= 26 Vdc, I
DQ
= 750 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 90 W (1)
(V
DD
= 26 Vdc, I
DQ
= 750 mA, f = 1930 - 1990 MHz)
Input Return Loss (1)
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 750 mA,
f = 1930 - 1990 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 750 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
G
ps
η
IRL
—
Ψ
—
- 10
dB
12
40
13.5
45
—
%
—
dB
C
rss
—
4.2
—
pF
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
3.7
0.1
7.2
4.5
—
—
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
No Degradation In Output Power
Before and After Test
(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch
consistency.
MRF18090BR3 MRF18090BSR3
2
MOTOROLA RF DEVICE DATA
R1
R2
T1
Z8
V
DD
C3
C4
+
C5
R3
V
GG
R5
R4
C1
C2
R6
Z7
Z9
C7
Z10
RF
OUTPUT
RF
INPUT
Z3
Z1
Z2
Z4
C6
Z5
Z6
DUT
C1
C2
C3, C4
C5
C6, C7
R1
R2, R3, R6
R4
R5
T1
Z1
1.0
mF
Chip Capacitor (0805)
1.0 nF Chip Capacitor (0805)
6.8 pF, 100B Chip Capacitors
220
mF,
50 V Electrolytic Capacitor
12 pF, 100B Chip Capacitors
2.2 kW Chip Resistor (0805)
1.0 kW Chip Resistors (0805)
10 kΩ Chip Resistor (0805)
6.8 kΩ Chip Resistor (0805)
BC847 SOT - 23
0.85″ x 0.09″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
PCB
Printed Inductance
Printed Inductance (Butterfly)
0.70″ x 0.09″ Microstrip
0.36″ x 0.09″ Microstrip
0.21″ x 1.25″ Microstrip
0.45″ x 1.18″ Microstrip
1.37″ x 0.05″ Microstrip
0.39″ x 0.09″ Microstrip
1.25″ x 0.09″ Microstrip
Teflon
Glass
Figure 1. 1.93 - 1.99 MHz Test Fixture Schematic
C5
VBIAS
R1
R3 R5
R2
T1 R4
R6
C1 C2
C3 C4
VSUPPLY
C6
C7
Ground
MRF18090B
Ground
Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18090BR3 MRF18090BSR3
3
T1
C1
C2
R3
T2
R4
C1, C3
C2
C4
C5
C6, C7
C8, C9, C10
R1
R2, R3
R4
C8
C9
C10
MRF18090B
Figure 4. 1.93 - 1.99 GHz Demo Board Component Layout
MRF18090BR3 MRF18090BSR3
4
MOTOROLA RF DEVICE DATA
Ï
ÏÏÏ
Ï Ï
Ï
Ï
ÏÏÏ
ÏÏÏ
ÏÏ
Ï
Ï
ÏÏ
ÏÏ
ÏÏ
ÏÏ
Ï
ÏÏ
ÏÏ
ÏÏÏÏ
Ï
ÏÏÏÏ
ÏÏÏ
ÏÏÏ
ÏÏÏ
T1
R1
R2
R6
C5
R5
+
V
SUPPLY
C3
C6
C4
C7
RF
INPUT
C9
Z1
C8
C10
Z4
Z2
Z3
RF
OUTPUT
1
mF
Chip Capacitors (0805)
0.1
mF
Chip Capacitor (0805)
1 nF Chip Capacitor (0805)
220
mF,
50 V Electrolytic Capacitor
8.2 pF, 100A Chip Capacitors
22 pF, 100A Chip Capacitors
10
Ω
Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
2.2 kΩ Chip Resistor (0805)
R5
10 kΩ Chip Resistor (0603)
R6
5 kΩ, SMD Potentiometer
T1
LP2951 Micro - 8 Voltage Regulator
T2
BC847 SOT - 23 NPN Transistor
Z1
0.491″ x 0.110″ Microstrip
Z2
0.756″ x 1.260″ Microstrip
Z3
1.433″ x 1.260″ Microstrip
Z4
0.567″ x 0.110″ Microstrip
Substrate = 0.5 mm Teflon
Glass
Figure 3. 1.93 - 1.99 GHz Demo Board Schematic
VSUPPLY
Ground
C1 R1 T 1
R2
R3
C2
C5
R4
T2
R6
C4
R5
C3
C6
C7
MRF18090B
TYPICAL CHARACTERISTICS
16
I
DQ
= 1000 mA
750 mA
Pout , OUTPUT POWER (WATTS)
15
G ps, POWER GAIN (dB)
14
13
12
300 mA
11
10
0.1
1
10
100
P
out
, OUTPUT POWER (WATTS)
1000
V
DD
= 26 Vdc
f = 1990 MHz
500 mA
140
120
100
80
60
40
20
0
12
14
16
22
18
20
24
26
V
DD
, SUPPLY VOLTAGE (VOLTS)
28
30
32
2W
I
DQ
= 750 mA
f = 1990 MHz
P
in
= 5 W
1W
Figure 5. Power Gain versus
Output Power
Figure 6. Output Power versus Supply Voltage
120
P
in
= 5 W
Pout , OUTPUT POWER (WATTS)
100
80
60
40
1W
20
0
1.91
1.93
1.95
1.97
f, FREQUENCY (GHz)
1.99
2.01
2W
V
DD
= 26 Vdc
I
DQ
= 750 mA
Pout , OUTPUT POWER (WATTS)
120
h
P
out
80
60
40
20
0
0
1
2
3
4
P
in
, INPUT POWER (WATTS)
5
6
V
DD
= 26 Vdc
I
DQ
= 750 mA
f = 1990 MHz
100
60
50
40
30
20
10
0
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
0
IRL, INPUT RETURN LOSS (dB)
G
ps
16
14
G ps, POWER GAIN (dB)
−5
12
IRL
10
−10
−15
8
6
1.88 1.90
1.92
1.96
1.98
1.94
f, FREQUENCY (GHz)
V
DD
= 26 Vdc
I
DQ
= 750 mA
2.00
2.02 2.04
−20
−25
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
MRF18090BR3 MRF18090BSR3
5
η
, DRAIN EFFICIENCY (%)
嵌入式系统
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