Freescale Semiconductor
Technical Data
Document Number: MRF18085B
Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
•
GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990
MHz)
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50% (Typ) @ 85 Watts CW
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 85 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency, and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF18085BLR3
MRF18085BLSR3
1930- 1990 MHz, 85 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18085BLR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18085BLSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
273
1.56
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
0.79
Unit
°C/W
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF18085BLR3 MRF18085BLSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 600 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Common- Source Amplifier Power Gain @ 85 W
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 85 W
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1930 - 1990 MHz)
Input Return Loss @ 85 W
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1930 - 1990 MHz)
P1 dB Output Power
(V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1930 - 1990 MHz)
1. Part is internally matched both on input and output.
G
ps
η
IRL
P1dB
11.5
46
—
80
12.5
50
- 12
90
—
—
-9
—
dB
%
dB
W
C
rss
—
3.6
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
2.5
—
—
3.9
0.18
4
4.5
0.21
Vdc
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
MRF18085BLR3 MRF18085BLSR3
2
RF Device Data
Freescale Semiconductor
V
SUPPLY
V
BIAS
+
C2
R1
R2
C8
C1
R3
RF
INPUT
Z1
C4
C9
C5
Z2
Z3
DUT
Z4
Z5
Z6
C6
Z7
RF
OUTPUT
C3
C10
C7
+
C11
C1, C10
C2
C3, C6
C4
C5
C7, C8
C9
C11
R1, R2
R3
1.0 nF Chip Capacitors, ATC
10
mF,
35 V Tantalum Capacitor
10 pF Chip Capacitors, ATC
3.3 pF Chip Capacitor, ATC
4.7 pF Chip Capacitor, ATC
100 nF Chip Capacitors, ACCU - P (1206)
3.9 pF Chip Capacitor, ATC
470
mF,
63 V Electrolytic Capacitor
1.0 kW Chip Resistors (0805)
2 x 18 kW Chip Resistor (1206)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
1.654″ x 0.082″ Microstrip
0.207″ x 0.082″ Microstrip
0.362″ x 1.260″ Microstrip
0.583″ x 0.669″ Microstrip
0.449″ x 0.179″ Microstrip
0.877″ x 0.082″ Microstrip
0.326″ x 0.082″ Microstrip
0.030″ Glass Teflon
®
(e
r
= 2.55)
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
C2
VBIAS
R1
R2
C8
C1
R3
C11
C3
C10
C7
VSUPPLY
A1
C6
C4
C9
C5
A2
MRF18085B
Rev 0
Ground
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MRF18085BLR3 MRF18085BLSR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
+
C13
C1
C12
R1
R2
C2
R5
+
C10
C11
T2
C3
C4
C14
R7
C5
R6
RF
INPUT
Z1
C9
Z2
C7
Z3
Z6
Z4
Z5
C8
Z7
Z8
Z9
RF
OUTPUT
B1
V
SUPPLY
R3
R4
B1
C1, C2
C3, C4
C5
C7
C8
C9
C10
C11, C12
C13
C14
MRF18085BLR3 MRF18085BLSR3
4
RF Device Data
Freescale Semiconductor
ÎÎÎ
ÎÎÎ
ÎÎÎ
T1
Short RF Ferrite Bead, #27 430119447
1
mF
Chip Capacitors, ACCU - P (0805)
1 nF Chip Capacitors, ACCU - P (0805)
10 pF Chip Capacitor, ACCU - P (0805)
1.5 pF Chip Capacitor, ACCU - P (0805)
8.2 pF Chip Capacitor, ACCU - P (0805)
1.0 pF Chip Capacitor, ACCU - P (0805)
100
mF,
63 V Electrolytic Capacitor
10 nF Chip Capacitors (0805)
10
mF,
35 V Tantalum Capacitor
8.2 pF Chip Capacitor, ACCU - P (0805)
R1
R2
R3
R4
R5
R6, R7
T1
T2
Z1 - Z9
Substrate
10
Ω
Chip Resistor (0805)
1 kΩ Chip Resistor (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ Chip Resistor (0805)
9
Ω
Chip Resistors (1206) (18
Ω
x 18
Ω)
Voltage Regulator, Micro - 8, #LP2951
NPN Bipolar Transistor, SOT - 23, #BC847
Printed Transmission Lines
0.5 mm Rogers 4350
(e
r
= 3.53)
Figure 3. 1930 - 1990 MHz GSM EDGE Optimized Demo Board Schematic
VBIAS
Ground
VSUPPLY
R1
C1
R2
R3
R4
C2
T2
R5
T1
C3
D
C13
C14
C10
+
C12
B1
C5
C4
C11
R6
C7
C9
C8
MRF18085
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. 1930 - 1990 MHz GSM EDGE Optimized Demo Board Component
Layout
MRF18085BLR3 MRF18085BLSR3
RF Device Data
Freescale Semiconductor
5
stm32/stm8
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