Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
参数名称 | 属性值 |
厂商名称 | KEC |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | BUILT IN BIAS RESISTOR RATIO 1 |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 30 |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 200 MHz |
KRA101S-RTK | KRA104S-RTK/P | KRA103S-RTK/P | KRA101S-RTK/P | KRA105S-RTK/P | KRA102S-RTK/P | KRA106S-RTK/P | |
---|---|---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | 额定功率:200mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:PNP - 预偏压 PNP,Vo=-50V,Io=-100mA | 额定功率:200mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:PNP - 预偏压 PNP Vo=-50V Io=-0.1A PD=0.2W R1=22K R2=22K | 额定功率:200mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:PNP - 预偏压 PNP,Vceo=-50V,IC=-100mA,PD=200mW,内置偏压电阻 | 额定功率:200mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:PNP - 预偏压 PNP,Vceo=-50V,IC=-100mA,PD=200mW,内置偏压电阻 | 额定功率:200mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:PNP - 预偏压 PNP Vo=-50V Io=-0.1A PD=0.2W R1=10K R2=10K | 额定功率:200mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:PNP - 预偏压 PNP,Vceo=-50V,IC=-100mA,PD=200mW,内置偏压电阻 |
额定功率 | - | 200mW | 200mW | 200mW | 200mW | 200mW | - |
集电极电流Ic | - | 100mA | 100mA | 100mA | 100mA | 100mA | - |
集射极击穿电压Vce | - | 50V | 50V | 50V | 50V | 50V | - |
晶体管类型 | - | PNP - 预偏压 | PNP - 预偏压 | PNP - 预偏压 | PNP - 预偏压 | PNP - 预偏压 | - |
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