MATRA MHS
M 65656
32 K
×
8 Ultimate CMOS SRAM
Description
The M 65656 is a very low power CMOS static RAM
organized as 32768
×
8 bits. It is manufactured using the
MHS high performance CMOS technology named
SCMOS.
With this process, MHS is the first to bring the solution for
applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable
instruments or embarked systems.
Using an array of six transistors (6T) memory cells, the
M 65656 combines an extremely low standby supply
current (Typical value = 0.1
µA)
with a fast access time
at 40 ns. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
Extra protection against heavy ions is given by the use of
an epitaxial layer of a P substrate.
For military/space applications that demand superior
levels of performance and reliability the M 65656 is
processed according to the methods of the latest revision
of the MIL STD 883 (class B or S) and/or ESA SCC 9000.
Features
D
Access time
commercial : 35(*), 40, 45, 55 ns
industrial automotive and military : 40(*), 45, 55 ns
D
Very low power consumption
active : 50 mW (typ)
standby : 0.5
µ
W (typ)
data retention : 0.4
µ
W (typ)
(*) Preliminary. Consult sales.
D
D
D
D
D
D
D
Wide temperature range : –55 to + 125°C
300 and 600 mils width package
TTL compatible inputs and outputs
Asynchronous
Single 5 volt supply
Equal cycle and access time
Gated inputs :
no pull-up/down
resistors are required
Interface
Block Diagram
Rev. C (09/08/95)
1
M 65656
Pin Configuration
Side Brazed 600/300 mils 28 pins
SOIC/SOJ 300 mils 28 pins
CDIL 600 mils 28 pins
Multilayer Flat Pack 28 pins
MATRA MHS
(Top View)
Pin Names
A
0
-A
14
:
I/O0-I/O7 :
V
CC
:
GND :
Address inputs
Input/Output
Power
Ground
CS :
W:
OE :
Chip-Select
Write Enable
Output Enable
Truth Table
CS
H
L
L
L
W
X
H
L
H
OE
X
L
X
H
INPUTS/
OUTPUTS
Z
DATA OUT
DATA IN
Z
MODE
Deselect/
POWER-DOWN
Read
Write
Output Disable
L = low, H = high, X = H or L, Z = high impedance
Electrical Characteristics
Absolute Maximum Ratings
Supply voltage to GND potential : . . . . . . . . . . . . . . . -0.3 V to + 7.0 V
Input or Output voltage applied : . . . . . (Gnd – 0.3 V) to (Vcc + 0.3 V)
Storage temperature : . . . . . . . . . . . . . . . . . . . . . . . –65
o
C to + 150
o
C
Electro static discharge voltage . . . . . . . . . . > 2000 V (MIL STD 883,
METHOD 3015)
Operating Range
OPERATING VOLTAGE
Military
Automotive
Industrial
Commercial
V
CC
= 5 V
±
10 %
V
CC
= 5 V
±
10 %
V
CC
= 5 V
±
10 %
V
CC
= 5 V
±
10 %
OPERATING TEMPERATURE
– 55
_C
to + 125
_C
– 40
_C
to + 125
_C
– 40
_C
to 85
_C
0
_C
to 70
_C
DC Operating Conditions
PARAMETER
Vcc
Gnd
VIL
VIH(1)
Note :
(1)
Ground
Input low voltage
input high voltage
DESCRIPTION
Supply voltage
MINIMUM
4.5
0.0
– 0.3
2.2
TYPICAL
5.0
0.0
0.0
–
MAXIMUM
5.5
0.0
0.8
Vcc + 0.3
UNIT
V
V
V
V
1. VIH max = Vcc + 0.3 V, VIL min = –0.3 V or –1.0 pulse 50 ns.
2
Rev. C (09/08/95)
MATRA MHS
Capacitance
PARAMETER
Cin
Cout
Note :
(2)
(2)
M 65656
DESCRIPTION
Input capacitance
Output capacitance
MINIMUM
–
–
TYPICAL
–
–
MAXIMUM
8
8
UNIT
pF
pF
2. TA = 25°C, f = 1 MHz, Vcc = 5.0 V, these parameters are not tested.
DC Parameter
PARAMETER
IIX
IOZ (3)
VOL
VOH
Notes :
(4)
(4)
(3)
DESCRIPTION
Input leakage current
Output leakage current
Output low voltage
Output high voltage
MINIMUM
– 1.0
– 1.0
–
2.4
TYPICAL
–
–
–
–
MAXIMUM
1.0
1.0
0.4
–
UNIT
µA
µA
V
V
3. Gnd < Vin < Vcc, Gnd < Vout < Vcc Output disabled.
4. Vcc min, IOL = 4 mA, IOH = –1.0 mA.
Consumption for Commercial Specification
SYMBOL
ICCSB
(5)
ICCSB1
(6)
ICCOP
(7)
PARAMETER
Standby supply
current
Standby supply
current
Operating supply
current
M 65656 M 65656 M 65656 M 65656 M 65656 M 65656 M 65656 M 65656
UNIT
L–35(*) V–35(*) L – 40 V – 40 L – 45 V – 45 L – 55 V – 55
10
75
90
5
5
70
10
75
90
5
5
70
10
75
90
5
5
70
10
75
90
5
5
70
mA
µA
mA
VALUE
max
max
max
Consumption for Industrial Specification
SYMBOL
ICCSB
(5)
ICCSB1
(6)
ICCOP
(7)
PARAMETER
Standby supply
current
Standby supply
current
Operating supply
current
M 65656
L – 40(*)
10
100
90
M 65656
V – 40(*)
5
10
70
M 65656
L – 45
10
100
90
M 65656
V – 45
5
10
70
M 65656
L – 55
10
100
90
M 65656
V – 55
5
10
70
UNIT
mA
µA
mA
VALUE
max
max
max
Consumption for Automotive and Military Specification
SYMBOL
ICCSB
(5)
ICCSB1
(6)
ICCOP
(7)
Notes :
5.
6.
7.
(*)
PARAMETER
Standby supply
current
Standby supply
current
Operating supply
current
M 65656
L – 40(*)
10
500
90
M 65656
V – 40(*)
5
100
70
M 65656
L – 45
10
500
90
M 65656
V – 45
5
100
70
M 65656
L – 55
10
500
90
M 65656
V – 55
5
100
70
UNIT
mA
µA
mA
VALUE
max
max
max
CS
≥
VIH, Vin
≥
VIH or Vin
≤
VIL.
CS
≥
Vcc – 0.3 V, Iout = 0 mA. Vin
≥
Vcc – 0.3 V or Vin
≤
0.3 V.
Vcc max, Iout = 0 mA, Vin = Gnd/Vcc. Duty cycle 100 %, F = 5 MHz, derating = 10 mA/MHz.
Preliminary. Please consult sales.
Rev. C (09/08/95)
3
M 65656
Data Retention Mode
MHS CMOS RAM’s are designed with battery backup in
mind. Data retention voltage and supply current are
guaranteed over temperature. The following rules insure
data retention :
1. Chip select (CS) must be held high during data
retention ; within Vcc to Vcc – 0.2 V.
MATRA MHS
2. Output Enable (OE) should be held high to keep the
RAM outputs high impedance, minimizing power
dissipation.
3. CS must be kept between Vcc -0.3 V and 70 % of Vcc
during the power up and power down transitions.
4. The RAM can begIn operation > 45 ns after Vcc
reaches the minimum operating voltage (4.5 V).
Timing
Data Retention Characteristics
PARAMETER
VCCDR
TCDR
TR
ICCDR1 (10)
DESCRIPTION
Vcc for data retention
Chip deselect to data retention
time
Operation recovery time
Data retention current
MINIMUM TYPICAL (8) MAXIMUM
2.0
0.0
TAVAV (9)
–
–
–
–
–
–
COM
IND
AUTO
and
MIL
80
300
UNIT
V
ns
ns
@ 2.0 V :
ICCDR2 (10)
M-65656 V
M-65656 L
–
–
0.1
0.1
3
60
8
80
µA
µA
Data retention current
@ 3.0 V :
M-65656 V
M-65656 L
–
–
0.3
0.3
4
70
9
90
90
400
µA
µA
Notes :
8. TA = 25°C.
9. TAVAV = Read cycle time.
10. CS = Vcc, Vin = Gnd/Vcc, this parameter is only tested at Vcc = 2 V.
4
Rev. C (09/08/95)
MATRA MHS
M 65656
AC Parameters
AC Conditions
Input pulse levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gnd to 3.0 V
Input rise : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Input timing reference levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V
Output load : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See fig. 1a, 1b
Write Cycle : Commercial Specification (note 12)
SYMBOL
TAVAV
TAVWL
TAVWH
TDVWH
TELWH
TWLQZ (11)
TWLWH
TWHAX
TWHDX
TWHQX (11)
PARAMETER
Write cycle time
Address set-up time
Address valid to end of write
Data set-up time
CS low to write end
Write low to high Z
Write pulse width
Address hold to end of write
Data hold time
Write high to low Z
M 65656 M 65656
L/V – 35(*) L/V – 40
35
0
30
20
30
15
30
0
0
0
40
0
30
22
30
15
30
0
0
0
M 65656
L/V – 45
45
0
35
25
35
15
35
0
0
0
M 65656
L/V – 55
55
0
40
25
40
20
40
0
0
0
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
VALUE
min
min
min
min
min
max
min
min
min
min
Write Cycle : Industrial Automotive and Military Specification (note 12)
SYMBOL
TAVAV
TAVWL
TAVWH
TDVWH
TELWH
TWLQZ (11)
TWLWH
TWHAX
TWHDX
TWHQX (11)
PARAMETER
Read cycle time
Address set-up time
Address valid to end of write
Data set-up time
CS low to write end
Write low to high Z
Write pulse width
Address hold to end of write
Data hold time
Write high to low Z
M 65656
L/V – 40(*)
40
0
30
22
30
15
30
0
0
0
M 65656
L/V – 45
45
0
35
25
35
15
35
0
0
0
M 65656
L/V – 55
55
0
40
25
40
20
40
0
0
0
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
VALUE
min
min
min
min
min
min
min
min
min
min
Notes :
11. Specified with CL = 5 pF (see figure 1b). Guaranteed. Not tested.
(*) Preliminary. Consult sales.
Rev. C (09/08/95)
5
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