D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
19-2328; Rev 2; 11/07
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
General Description
The MAX3372E–MAX3379E and MAX3390E–MAX3393E
±15kV ESD-protected level translators provide the level
shifting necessary to allow data transfer in a multivoltage
system. Externally applied voltages, V
CC
and V
L
, set the
logic levels on either side of the device. A low-voltage
logic signal present on the V
L
side of the device appears
as a high-voltage logic signal on the V
CC
side of the
device, and vice-versa. The MAX3374E/MAX3375E/
MAX3376E/MAX3379E and MAX3390E–MAX3393E unidi-
rectional level translators level shift data in one direction
(V
L
→
V
CC
or V
CC
→
V
L
) on any single data line. The
MAX3372E/MAX3373E and MAX3377E/MAX3378E bidi-
rectional level translators utilize a transmission-gate-
based design (Figure 2) to allow data translation in either
direction (V
L
↔
V
CC
) on any single data line. The
MAX3372E–MAX3379E and MAX3390E–MAX3393E
accept V
L
from +1.2V to +5.5V and V
CC
from +1.65V to
+5.5V, making them ideal for data transfer between low-
voltage ASICs/PLDs and higher voltage systems.
All devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family feature a three-state output mode that
reduces supply current to less than 1µA, thermal short-
circuit protection, and ±15kV ESD protection on the V
CC
side for greater protection in applications that route sig-
nals externally. The MAX3372E/MAX3377E operate at a
guaranteed data rate of 230kbps. Slew-rate limiting
reduces EMI emissions in all 230kbps devices. The
MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E operate at a guaranteed data rate
of 8Mbps over the entire specified operating voltage
range. Within specific voltage domains, higher data rates
are possible. (See the
Timing Characteristics
table.)
The MAX3372E–MAX3376E are dual level shifters
available in 3 x 3 UCSP™, 8-pin TDFN, and 8-pin
SOT23-8 packages. The MAX3377E/MAX3378E/
MAX3379E and MAX3390E–MAX3393E are quad level
shifters available in 3 x 4 UCSP, 14-pin TDFN, and 14-
pin TSSOP packages.
Features
♦
Guaranteed Data Rate Options
230kbps
8Mbps (+1.2V
≤
V
L
≤
V
CC
≤
+5.5V)
10Mbps (+1.2V
≤
V
L
≤
V
CC
≤
+3.3V)
16Mbps (+1.8V
≤
V
L
≤
V
CC
≤
+2.5V and +2.5V
≤
V
L
≤
V
CC
≤
+3.3V)
♦
Bidirectional Level Translation
(MAX3372E/MAX3373E and
MAX3377E/MAX3378E)
♦
Operation Down to +1.2V on V
L
♦
±15kV ESD Protection on I/O V
CC
Lines
♦
Ultra-Low 1µA Supply Current in Three-State
Output Mode
♦
Low-Quiescent Current (130µA typ)
♦
UCSP, TDFN, SOT23, and TSSOP Packages
♦
Thermal Short-Circuit Protection
MAX3372E–MAX3379E/MAX3390E–MAX3393E
Ordering Information
PART
MAX3372EEKA+T
TEMP
RANGE
-40°C to +85°C
PIN-
PACKAGE
8 SOT23
PKG
CODE
K8S-3
+Denotes
a lead-free package.
T = Tape and reel.
Ordering Information continued at end of data sheet.
Selector Guide appears at end of data sheet.
UCSP is a trademark of Maxim Integrated Products, Inc.
SPI is a trademark of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.
Pin Configurations
TOP VIEW
I/O V
L
1
I/O V
L
2
1
2
14
13
12
11
10
9
8
V
CC
I/0 V
CC
1
I/0 V
CC
2
N.C.
V
L
I/0 V
CC
3
I/0 V
CC
4
________________________Applications
SPI™, MICROWIRE™, and I
2
C Level
Translation
Low-Voltage ASIC Level Translation
Smart Card Readers
Cell-Phone Cradles
Portable POS Systems
Portable Communication Devices
Low-Cost Serial Interfaces
Cell Phones
GPS
Telecommunications Equipment
MAX3377E/
MAX3378E
THREE-STATE 3
N.C.
I/O V
L
3
I/O V
L
4
GND
4
5
6
7
TDFN-14
(3mm x 3mm)
Pin Configurations continued at end of data sheet.
1
________________________________________________________________
Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
MAX3372E–MAX3379E/MAX3390E–MAX3393E
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND.)
V
CC
...........................................................................-0.3V to +6V
I/O V
CC_
......................................................-0.3V to (V
CC
+ 0.3V)
I/O V
L_
...........................................................-0.3V to (V
L
+ 0.3V)
THREE-STATE...............................................-0.3V
to (V
L
+ 0.3V)
Short-Circuit Duration I/O V
L
, I/O V
CC
to GND...........Continuous
Short-Circuit Duration I/O V
L
or I/O V
CC
to GND
Driven from 40mA Source
(except MAX3372E and MAX3377E) .....................Continuous
Continuous Power Dissipation (T
A
= +70°C)
8-Pin SOT23 (derate 8.9mW/°C above +70°C)...........714mW
8-Pin TDFN (derate 18.2mW/°C above +70°C) ........1455mW
3 x 3 UCSP (derate 4.7mW/°C above +70°C) ............379mW
3 x 4 UCSP (derate 6.5mW/°C above +70°C) ............579mW
14-Pin TSSOP (derate 9.1mW/°C above +70°C) ........727mW
14-Pin TDFN (derate 18.2mW/°C above +70°C) ......1454mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= +1.2V to (V
CC
+ 0.3V), GND = 0, I/O V
L_
and I/O V
CC_
unconnected, T
A
= T
MIN
to T
MAX
, unless other-
wise noted. Typical values are at V
CC
= +3.3V, V
L
= +1.8V, T
A
= +25°C.) (Notes 1, 2)
PARAMETER
POWER SUPPLIES
V
L
Supply Range
V
CC
Supply Range
Supply Current from V
CC
Supply Current from V
L
V
CC
Three-State Output Mode
Supply Current
V
L
Three-State Output Mode
Supply Current
Three-State Output Mode
Leakage Current
I/O V
L_
and I/O V
CC_
THREE-STATE
Pin Input Leakage
ESD PROTECTION
IEC 1000-4-2 Air-Gap Discharge
I/O V
CC
(Note 3)
IEC 1000-4-2 Contact Discharge
Human Body Model
LOGIC-LEVEL THRESHOLDS (MAX3372E/MAX3377E)
I/O V
L_
Input-Voltage High
I/O V
L_
Input-Voltage Low
V
IHL
V
ILL
V
L
- 0.2
0.15
V
V
±8
±8
±15
kV
V
L
V
CC
IQV
CC
IQV
L
I
THREE-STATE-VCC
I
THREE-STATE-VL
T
A
= +25°C,
THREE-STATE
= GND
T
A
= +25°C,
THREE-STATE
= GND
1.2
1.65
130
16
0.03
0.03
5.5
5.50
300
100
1
1
V
V
µA
µA
µA
µA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
I
THREE-STATE-LKG
T
A
= +25°C,
THREE-STATE
= GND
T
A
= +25°C
0.02
0.02
1
1
µA
µA
2
_______________________________________________________________________________________
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +1.65V to +5.5V, V
L
= +1.2V to (V
CC
+ 0.3V), GND = 0, I/O V
L_
and I/O V
CC_
unconnected, T
A
= T
MIN
to T
MAX
, unless other-
wise noted. Typical values are at V
CC
= +3.3V, V
L
= +1.8V, T
A
= +25°C.) (Notes 1, 2)
PARAMETER
I/O V
CC_
Input-Voltage High
I/O V
CC_
Input-Voltage Low
I/O V
L_
Output-Voltage High
I/O V
L_
Output-Voltage Low
I/O V
CC_
Output-Voltage High
I/O V
CC_
Output-Voltage Low
THREE-STATE
Input-Voltage
High
THREE-STATE
Input-Voltage
Low
I/O V
L_
Input-Voltage High
I/O V
L_
Input-Voltage Low
I/O V
CC_
Input-Voltage High
I/O V
CC_
Input-Voltage Low
I/O V
L_
Output-Voltage High
I/O V
L_
Output-Voltage Low
I/O V
CC_
Output-Voltage High
I/O V
CC_
Output-Voltage Low
THREE-STATE
Input-Voltage
High
THREE-STATE
Input-Voltage
Low
SYMBOL
V
IHC
V
ILC
V
OHL
V
OLL
V
OHC
V
OLC
V
IL-THREE-STATE
V
IL-THREE-STATE
I/O V
L_
source current = 20µA,
I/O V
CC_
> V
CC
- 0.4V
I/O V
L_
sink current = 20µA,
I/O V
CC_
< 0.15V
I/O V
CC_
source current = 20µA,
I/O V
L _
> V
L
- 0.2V
I/O V
CC_
sink current = 20µA,
I/O V
L_
< 0.15V
V
L
- 0.2
0.15
0.67
✕
V
CC
0.4
0.67
✕
V
L
0.4
CONDITIONS
MIN
TYP
MAX
0.15
UNITS
V
V
V
V
V
V
V
V
MAX3372E–MAX3379E/MAX3390E–MAX3393E
V
CC
- 0.4
LOGIC-LEVEL THRESHOLDS (MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E)
V
IHL
V
ILL
V
IHC
V
ILC
V
OHL
V
OLL
V
OHC
V
OLC
V
IH-THREE-STATE
V
IL-THREE-STATE
I/O V
L_
source current = 20µA,
I/O V
CC_
≥
V
CC
- 0.4V
I/O V
L_
sink current = 1mA,
I/O V
CC_
≤
0.15V
I/O V
CC_
source current = 20µA,
I/O V
L_
≥
V
L
- 0.2V
I/O V
CC_
sink current = 1mA,
I/O V
L_
≤
0.15V
V
L
- 0.2
0.15
0.67
✕
V
CC
0.4
0.67
✕
V
L
0.4
V
CC
- 0.4
0.15
V
L
- 0.2
0.15
V
V
V
V
V
V
V
V
V
V
_______________________________________________________________________________________
3
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
MAX3372E–MAX3379E/MAX3390E–MAX3393E
TIMING CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= +1.2V to (V
CC
+ 0.3V), GND = 0, R
LOAD
= 1MΩ, I/O test signal of Figure 1, T
A
= T
MIN
to T
MAX
, unless
otherwise noted. Typical values are at V
CC
= +3.3V, V
L
= +1.8V, T
A
= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
I/O V
CC
_ Rise Time (Note 4)
I/O V
CC
_ Fall Time (Note 5)
I/O V
L
_ Rise Time (Note 4)
I/O V
L
_ Fall Time (Note 5)
Propagation Delay
Channel-to-Channel Skew
Maximum Data Rate
SYMBOL
t
RVCC
t
FVCC
t
RVL
t
FVL
I/O
VL-VCC
I/O
VCC-VL
t
SKEW
Driving I/O V
L
_
Driving I/O V
CC
_
Each translator equally loaded
C
L
= 25pF
230
CONDITIONS
MIN
TYP
1100
1000
600
1100
1.6
1.6
500
MAX
UNITS
ns
ns
ns
ns
µs
ns
kbps
MAX3372E/MAX3377E (C
LOAD
= 50pF)
MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E (C
LOAD
= 15pF, Driver Output Impedance
≤
50
Ω)
+1.2V
≤
V
L
≤
V
CC
≤
+5.5V
I/O V
CC
_ Rise Time (Note 4)
I/O V
CC
_ Fall Time (Note 5)
I/O V
L
_ Rise Time (Note 4)
I/O V
L
_ Fall Time (Note 5)
t
RVCC
t
FVCC
t
RVL
t
LFV
I/O
VL-VCC
Propagation Delay
I/O
VCC-VL
Channel-to-Channel Skew
Maximum Data Rate
t
SKEW
Driving I/O V
CC
_
Each translator
equally loaded
Open-drain driving
7
Open-drain driving
Open-drain driving
Open-drain driving
Open-drain driving
Driving I/O V
L
_
Open-drain driving
Open-drain driving
Open-drain driving
8
500
170
6
20
8
180
3
30
5
210
4
190
25
400
37
50
30
400
30
60
30
1000
30
1000
20
50
ns
Mbps
kbps
ns
ns
ns
ns
ns
4
_______________________________________________________________________________________
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
