SKiM406GD066HD
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 360 V
V
GE
≤
15 V
V
CES
≤
600 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
s
= 25 °C
T
s
= 70 °C
T
j
= 150 °C
T
j
= 175 °C
T
s
= 25 °C
T
s
= 70 °C
600
383
304
400
800
-20 ... 20
6
-40 ... 175
320
249
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
2340
-40 ... 175
700
-40 ... 125
AC sinus 50 Hz, t = 1 min
2500
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SKiM 63
Trench IGBT Modules
SKiM406GD066HD
®
T
j
= 175 °C
I
Fnom
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
• V
CE(sat)
with positive temperature
coefficient
• Low inductance case
• Isolated by Al
2
O
3
DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self
limiting to 6 x I
C
• Integrated temperature sensor
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
I
C
= 400 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
24.64
1.54
0.73
3200
0.5
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
180
80
8
950
50
25
0.186
1.45
1.70
0.9
0.85
1.4
2.1
5.8
0.1
1.85
2.10
1
0.9
2.1
3.0
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
V
GE
=V
CE
, I
C
= 6.4 mA
V
GE
= 0 V
V
CE
= 600 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 300 V
I
C
= 400 A
R
G on
= 3
Ω
R
G off
= 5
Ω
di/dt
on
= 5900 A/µs
di/dt
off
= 6000 A/µs
per IGBT
GD
© by SEMIKRON
Rev. 3 – 14.12.2009
1
SKiM406GD066HD
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
T
j
= 150 °C
I
RRM
Q
rr
E
rr
R
th(j-s)
Module
L
CE
R
CC'+EE'
terminal-chip
to heat sink (M4)
to terminals (M6)
T
s
= 25 °C
T
s
= 125 °C
2.5
3
9
0.3
0.5
4
5
750
T
Sensor
= 100 °C (R
25
= 5 kΩ)
R
(T)
= R
100
exp[B
100/125
(1/T-1/373)];
T[K];
339
4096
13
nH
mΩ
mΩ
Nm
Nm
Nm
w
Temperature sensor
R
100
B
100/125
Ω
K
g
I
F
= 400 A
T
j
= 150 °C
di/dt
off
= 5900 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 300 V
per diode
min.
typ.
1.5
1.6
1
0.85
1.3
1.8
350
49
12
max.
1.8
1.8
1.1
0.95
1.7
2.2
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 400 A
V
GE
= 0 V
chip
V
F0
SKiM
®
63
Trench IGBT Modules
SKiM406GD066HD
0.288
K/W
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
• V
CE(sat)
with positive temperature
coefficient
• Low inductance case
• Isolated by Al
2
O
3
DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self
limiting to 6 x I
C
• Integrated temperature sensor
M
s
M
t
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
GD
2
Rev. 3 – 14.12.2009
© by SEMIKRON
SKiM406GD066HD
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 3 – 14.12.2009
3
SKiM406GD066HD
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 3 – 14.12.2009
© by SEMIKRON
SKiM406GD066HD
SKIM® 63
GD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 3 – 14.12.2009
5
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