SID01N60
Elektronische Bauelemente
1.6A, 600V,R
DS(ON)
8
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SID01N60 provide the designer with the best combination
of fast switching.
The TO-251 is universally preferred for all commercial-industrial
surface mount applications
and suited for AC/DC converters.
5.6
±0.2
6.6
±0.2
5.3
±0.2
TO-251
2.3
±0.1
0.5
±0.05
7.0
±0.2
Features
* Dynamic dv/dt Rating
7.0
±0.2
1.2
±0.3
0.75
±0.15
*
Simple Drive Requirement
*
Fast Switching
*
Repetitive Avalanche Rated
0.6
±0.1
2.3
REF.
0.5
±0.1
G
D
S
Dimensions in millimeters
D
G
Marking Code:
01N60
XXXX(Date Code)
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
=100
C
I
DM
P
D
@T
C
=25
C
o
o
o
Ratings
600
± 20
1.6
1
6
39
0.31
Unit
V
V
A
A
A
W
W/ C
o
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
2
E
AS
I
AR
E
AR
Tj, Tstg
13
1.6
0.5
-55~+150
mJ
A
mJ
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
Symbol
Max.
Max.
Rthj-c
Rthj-a
Ratings
3.2
110
o
o
Unit
C /W
C /W
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
5
SID01N60
Elektronische Bauelemente
1.6A, 600V,R
DS(ON)
8
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current(Tj=150
C
)
Static Drain-Source On-Resistance
o
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
R
D S (O N )
Gfs
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Min.
600
_
Typ.
_
Max.
_
Unit
V
V/ C
V
nA
uA
uA
Ω
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1mA
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±
20V
V
DS
=60 0V,V
GS
=0
V
DS
=480 V,V
GS
=0
V
GS
=10V, I
D
=0.8A
V
DS
=50V, I
D
=0.8A
I
D
=1.6A
V
DS
=480V
V
GS
= 10V
o
0.6
_
_
_
_
_
2.0
_
_
_
_
4.0
±
100
100
500
8.0
_
_
_
_
7.2
Forward Transconductance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
_
_
_
_
_
_
_
_
_
_
_
0.8
7.7
1.5
2.6
8
5
14
7
286
25
5
S
nC
_
_
_
_
_
_
_
V
DD
=300V
I
D
=1.6A
nS
V
GS
=10V
R
G
=10
Ω
R
D
=187.5
Ω
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
3
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
1
Symbol
V
SD
I
S
Min.
_
_
Typ.
_
_
_
Max.
1.5
Unit
V
A
A
Test Condition
I
S
=1.6A, V
GS
=0V.Tj=25C
V
D
=V
G
=0V,V
S
=1.5 V
o
1.6
6
I
SM
_
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 : , V
DD
=50V, L=10mH, R
G
=25 Ł , I
AS
=1.6A.
3. Pulse width 300us, duty cycle 2%.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
5
SID01N60
Elektronische Bauelemente
1.6A, 600V,R
DS(ON)
8
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Type Power Dissipation
Any changing of specification will not be informed individual
Page
3
of
5
SID01N60
Elektronische Bauelemente
1.6A, 600V,R
DS(ON)
8
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page
4
of
5
SID01N60
Elektronische Bauelemente
1.6A, 600V,R
DS(ON)
8
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
5
of
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
