NPN LOW NOISE
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Zetex Semiconductors |
| 包装说明 | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.2 A |
| 集电极-发射极最大电压 | 45 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 100 |
| JESD-30 代码 | R-PSIP-W3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | 235 |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.35 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 150 MHz |
| VCEsat-Max | 0.25 V |
| ZTX382 | ZTX109 | ZTX384 | ZTX383 | ZTX331 | ZTX330 | ZTX239 | |
|---|---|---|---|---|---|---|---|
| 描述 | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| 包装说明 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.2 A | 0.1 A | 0.2 A | 0.2 A | 0.5 A | 0.5 A | 0.2 A |
| 集电极-发射极最大电压 | 45 V | 30 V | 30 V | 30 V | 45 V | 30 V | 30 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 100 | 240 | 250 | 100 | 40 | 100 | 180 |
| JESD-30 代码 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 峰值回流温度（摄氏度） | 235 | 235 | 235 | 235 | 235 | 235 | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.35 W | 0.3 W | 0.35 W | 0.35 W | 0.3 W | 0.3 W | 0.35 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 150 MHz | 350 MHz | 150 MHz | 150 MHz | 30 MHz | 30 MHz | 150 MHz |
| VCEsat-Max | 0.25 V | - | 0.25 V | 0.25 V | 0.7 V | 0.7 V | 0.25 V |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
