Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> BTW66-800

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BTW66-800: 产品描述30A, 800V, SCR; 产品类别模拟混合信号IC 触发装置; 文件大小82KB，共6页; 制造商ST(意法半导体); 官网地址http://www.st.com/

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BTW66-800概述

30A, 800V, SCR

BTW66-800规格参数

参数名称	属性值
厂商名称	ST(意法半导体)
包装说明	FLANGE MOUNT, O-MUFM-D3
Reach Compliance Code	compliant
其他特性	UL RECOGNIZED
外壳连接	ISOLATED
标称电路换相断开时间	100 µs
配置	SINGLE
关态电压最小值的临界上升速率	500 V/us
最大直流栅极触发电流	50 mA
最大直流栅极触发电压	1.5 V
快速连接描述	A-G-K
螺丝端子的描述	0
最大维持电流	75 mA
JESD-30 代码	O-MUFM-D3
最大漏电流	3 mA
通态非重复峰值电流	200 A
元件数量	1
端子数量	3
最大通态电流	20000 A
最高工作温度	125 °C
最低工作温度	-40 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	FLANGE MOUNT
认证状态	Not Qualified
最大均方根通态电流	30 A
重复峰值关态漏电流最大值	20 µA
断态重复峰值电压	800 V
重复峰值反向电压	800 V
表面贴装	NO
端子形式	SOLDER LUG
端子位置	UPPER
触发设备类型	SCR

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BTW 66

BTW 67

SCR

FEATURES

HIGH SURGE CAPABILITY

HIGH ON-STATE CURRENT

HIGH STABILITY AND RELIABILITY

ISOLATED PACKAGE :

INSULATED VOLTAGE = 2500V

(RMS)

(UL RECOGNIZED : E81734)

DESCRIPTION

The BTW 66 and BTW 67 Family Silicon Controlled

Rectifiers are high performance glass passivated

chips technology.

This general purpose Family Silicon Controlled

Rectifiers is designed for power supply up to

400Hz on resistive or inductive load.

ABSOLUTE RATINGS

(limiting values)

Symbol

IT(RMS)

IT(AV)

ITSM

RMS on-state current

(180° conduction angle)

Average on-state current (180° conduction

angle,single phase circuit)

Non repetitive surge peak on-state current

( Tj initial = 25°C )

Parameter

BTW 66

BTW 67

BTW 66

BTW 67

BTW 66

BTW 67

BTW 66

BTW 67

I2t

dI/dt

I2t value

Critical rate of rise of on-state current

Gate supply : IG = 100 mA diG/dt = 1 A/µs

Storage and operating junction temperature range

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

Parameter

200

VDRM

VRRM

March 1995

Repetitive peak off-state voltage

Tj = 125

°C

200

400

BTW 66

BTW 67

Tc=75°C

tp=8.3 ms

tp=10 ms

RD 91

(Plastic)

Value

420

525

400

500

800

1250

100

Unit

tp=10 ms

A2s

A/µs

°C

Tstg

- 40 to + 150

- 40 to + 125

230

Symbol

BTW 66- / BTW 67-

600

800

1000

1200

Unit

1/6

BTW66-800相似产品对比

	BTW66-800	BTW66-1000	BTW66-1200	BTW66-400	BTW66-600	BTW67-400
描述	30A, 800V, SCR	30A, 1000V, SCR	30A, 1200V, SCR	30A, 400V, SCR	30A, 600V, SCR	40A, 400V, SCR
厂商名称	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)	ST(意法半导体)
包装说明	FLANGE MOUNT, O-MUFM-D3	FLANGE MOUNT, O-MUFM-D3	FLANGE MOUNT, O-MUFM-D3	FLANGE MOUNT, O-MUFM-D3	FLANGE MOUNT, O-MUFM-D3	FLANGE MOUNT, O-MUFM-D3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
其他特性	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
标称电路换相断开时间	100 µs	100 µs	100 µs	100 µs	100 µs	100 µs
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
关态电压最小值的临界上升速率	500 V/us	250 V/us	250 V/us	500 V/us	500 V/us	500 V/us
最大直流栅极触发电流	50 mA	50 mA	50 mA	50 mA	50 mA	80 mA
最大直流栅极触发电压	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
快速连接描述	A-G-K	A-G-K	A-G-K	A-G-K	A-G-K	A-G-K
最大维持电流	75 mA	75 mA	75 mA	75 mA	75 mA	150 mA
JESD-30 代码	O-MUFM-D3	O-MUFM-D3	O-MUFM-D3	O-MUFM-D3	O-MUFM-D3	O-MUFM-D3
最大漏电流	3 mA	3 mA	3 mA	3 mA	3 mA	6 mA
通态非重复峰值电流	200 A	200 A	420 A	200 A	200 A	350 A
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
最大通态电流	20000 A	20000 A	20000 A	20000 A	20000 A	25000 A
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大均方根通态电流	30 A	30 A	30 A	30 A	30 A	40 A
重复峰值关态漏电流最大值	20 µA	20 µA	20 µA	20 µA	20 µA	20 µA
断态重复峰值电压	800 V	1000 V	1200 V	400 V	600 V	400 V
重复峰值反向电压	800 V	1000 V	1200 V	400 V	600 V	400 V
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
端子位置	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
触发设备类型	SCR	SCR	SCR	SCR	SCR	SCR

BTW66-800

BTW66-800概述

BTW66-800规格参数

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