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COM340T: 产品描述Power Field-Effect Transistor, 10A I(D), 400V, 0.59ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN; 产品类别分立半导体晶体管; 文件大小233KB，共4页; 制造商Omnirel Corp

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COM340T概述

Power Field-Effect Transistor, 10A I(D), 400V, 0.59ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

COM340T规格参数

参数名称	属性值
厂商名称	Omnirel Corp
包装说明	HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Reach Compliance Code	unknown
其他特性	HIGH RELIABILITY
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V
最大漏极电流 (ID)	10 A
最大漏源导通电阻	0.59 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-257AA
JESD-30 代码	R-MSFM-P3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	40 A
认证状态	Not Qualified
表面贴装	NO
端子形式	PIN/PEG
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON

COM340T相似产品对比

	COM340T	COM240T	COM440T	COM140T
描述	Power Field-Effect Transistor, 10A I(D), 400V, 0.59ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Power Field-Effect Transistor, 14A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Power Field-Effect Transistor, 8A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
厂商名称	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp
包装说明	HERMETIC SEALED, METAL, TO-257AA, 3 PIN	HERMETIC SEALED, METAL, TO-257AA, 3 PIN	HERMETIC SEALED, METAL, TO-257AA, 3 PIN	HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Reach Compliance Code	unknown	unknown	unknown	unknown
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V	200 V	500 V	100 V
最大漏极电流 (ID)	10 A	14 A	8 A	14 A
最大漏源导通电阻	0.59 Ω	0.21 Ω	0.9 Ω	0.12 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-257AA	TO-257AA	TO-257AA	TO-257AA
JESD-30 代码	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
元件数量	1	1	1	1
端子数量	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL	METAL	METAL
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	40 A	56 A	32 A	56 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON

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