SEMiX653GAL176HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 1000 V
V
GE
≤
20 V
V
CES
≤
1700 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1700
619
438
450
900
-20 ... 20
10
-55 ... 150
545
365
450
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
2900
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
545
365
450
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
2900
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
Trench IGBT Modules
SEMiX653GAL176HDs
®
T
j
= 150 °C
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 150 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 450 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 125 °C
5.2
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
39.6
1.65
1.31
4200
1.67
2
2.45
1
0.9
2.2
3.4
5.8
0.1
2.45
2.9
1.2
1.1
2.8
4.0
6.4
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 18 mA
V
GE
= 0 V
V
CE
= 1700 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAL
© by SEMIKRON
Rev. 12 – 16.12.2009
1
SEMiX653GAL176HDs
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
= 450 A
T
j
= 125 °C
di/dt
off
= 4200 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 1200 V
per diode
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Temperatur Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
Ω
K
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
T
C
= 25 °C
T
C
= 125 °C
20
0.7
1
0.04
5
5
300
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
T
j
= 25 °C
T
j
= 125 °C
I
F
= 450 A
T
j
= 125 °C
di/dt
off
= 4200 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 1200 V
per diode
0.9
0.7
1.3
1.8
0.9
0.7
1.3
1.8
1.7
1.7
1.1
0.9
1.3
1.8
380
130
73
0.11
1.7
1.7
1.1
0.9
1.3
1.8
380
130
73
0.11
1.9
1.9
1.3
1.1
1.3
1.8
Conditions
V
CC
= 1200 V
I
C
= 450 A
R
G on
= 3.6
Ω
R
G off
= 3.6
Ω
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
min.
typ.
290
90
300
975
190
180
max.
Unit
ns
ns
mJ
ns
ns
mJ
0.054
1.90
1.9
1.3
1.1
1.3
1.8
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
SEMiX
®
3s
Trench IGBT Modules
SEMiX653GAL176HDs
Inverse diode
V
F
= V
EC
I
F
= 450 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Freewheeling diode
V
F
= V
EC
I
F
= 450 A
V
GE
= 0 V
chip
V
F0
GAL
2
Rev. 12 – 16.12.2009
© by SEMIKRON
SEMiX653GAL176HDs
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 12 – 16.12.2009
3
SEMiX653GAL176HDs
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 12 – 16.12.2009
© by SEMIKRON
SEMiX653GAL176HDs
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 12 – 16.12.2009
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
