SEMiX403GD128Dc
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
≤
20 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
418
298
225
450
-20 ... 20
10
-40 ... 150
342
235
225
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
450
2000
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 33c
SPT IGBT Modules
SEMiX403GD128Dc
®
T
j
= 150 °C
I
Fnom
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Typical Applications*
Characteristics
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Conditions
I
C
= 225 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 9 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 225 A
R
G on
= 4
Ω
R
G off
= 4
Ω
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
per IGBT
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
j
= 25 °C
T
j
= 125 °C
min.
typ.
1.9
2.1
1
0.9
4.0
5.3
max.
2.3
2.55
1.15
1.05
5.1
6.7
6.5
0.3
Unit
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
4.5
5
0.1
20.8
1.38
0.87
2130
1.67
145
60
20
575
70
23
0.075
K/W
GD
© by SEMIKRON
Rev. 9 – 16.12.2009
1
SEMiX403GD128Dc
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
r
F
T
j
= 25 °C
T
j
= 125 °C
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
T
C
= 25 °C
T
C
= 125 °C
20
0.7
1
0.014
5
5
900
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
w
Temperatur Sensor
R
100
B
100/125
Ω
K
g
I
F
= 225 A
T
j
= 125 °C
di/dt
off
= 4950 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
0.75
0.5
3.3
3.6
min.
typ.
2.0
1.8
1.1
0.85
4.0
4.2
260
29
10
max.
2.50
2.3
1.45
1.2
4.7
4.9
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 225 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
33c
SPT IGBT Modules
SEMiX403GD128Dc
0.13
K/W
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
R
th(c-s)
M
s
M
t
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
GD
2
Rev. 9 – 16.12.2009
© by SEMIKRON
SEMiX403GD128Dc
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 9 – 16.12.2009
3
SEMiX403GD128Dc
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 9 – 16.12.2009
© by SEMIKRON
SEMiX403GD128Dc
SEMiX 33c
pinout
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 9 – 16.12.2009
5
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