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BR3508(W): 产品描述Bridge Rectifier Diode, 35A, 800V V(RRM),; 产品类别分立半导体二极管; 文件大小70KB，共2页; 制造商Galaxy Microelectronics; 标准

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BR3508(W)概述

Bridge Rectifier Diode, 35A, 800V V(RRM),

BR3508(W)规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Galaxy Microelectronics
Reach Compliance Code	unknown
配置	BRIDGE, 4 ELEMENTS
二极管类型	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1.1 V
最大非重复峰值正向电流	400 A
元件数量	4
最高工作温度	125 °C
最大输出电流	35 A
最大重复峰值反向电压	800 V
表面贴装	NO

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FEATURES

GALAXY ELECTRICAL

BR35005(W)- -

BR3510(W)

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 35.0 A

SILICON BRIDGE RECTIFIERS

Rating to 1000V PRV

Surge overload rating to

400

Amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

Lead solderable per MIL-STD-202 method 208

Mounting: thru hole for # 8 screw

mounting

METAL HEAT SINK

.452

(11.5)

MAX

.042(1.1)

.090(2.0)

PLASTIC

.480(12.2)

.425(10.8)

1.181(30.0)

1.102(28.0)

HOLE FOR

NO.8 SCREW

.732(18.6)

.692(17.6)

.468(11.9)

.429(10.9)

1.181(30.0)

1.102(28.0)

.732(18.6)

.692(17.6)

.033x 250

(0.8x 6.4)

inch (mm)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

35005

(W)

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard

output current

=50

3501

(W)

100

3502

(W)

200

140

200

3504

(W)

400

280

400

35.0

3506

(W)

600

420

600

3508

(W)

800

560

800

3510

(W)

1000

700

1000

UNITS

RRM

RMS

F(AV)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

@ 17.5 A

Maximum reverse current

at rated DC blocking voltage

=25

=100

FSM

400.0

STG

1.1

10.0

1.0

- 55 ---- + 125

- 55 ---- + 150

μA

Operating junction temperature range

Storage temperature range

www.galaxycn.com

Document Number 0287052

GALAXY ELECTRICAL

BR3508(W)相似产品对比

	BR3508(W)	BR3504(W)	BR3506(W)	BR3501(W)	BR3502(W)
描述	Bridge Rectifier Diode, 35A, 800V V(RRM),	Bridge Rectifier Diode, 35A, 400V V(RRM),	Bridge Rectifier Diode, 35A, 600V V(RRM),	Bridge Rectifier Diode, 35A, 100V V(RRM),	Bridge Rectifier Diode, 35A, 200V V(RRM),
是否Rohs认证	符合	符合	符合	符合	符合
厂商名称	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
配置	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
二极管类型	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
最大非重复峰值正向电流	400 A	400 A	400 A	400 A	400 A
元件数量	4	4	4	4	4
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C
最大输出电流	35 A	35 A	35 A	35 A	35 A
最大重复峰值反向电压	800 V	400 V	600 V	100 V	200 V
表面贴装	NO	NO	NO	NO	NO

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