Bulletin I27130 rev. C 09/97
IRK.26 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 V
RMS
isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
NEW ADD-A-pak
TM
Power Modules
27 A
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configura-
tions. The semiconductor chips are electrically iso-
lated from the base plate, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges or AC controllers. These modules are intended
for general purpose high voltage applications such as
high voltage regulated power supplies, lighting
circuits, and temperature and motor speed control
circuits.
Major Ratings and Characteristics
Parameters
I
T(AV)
or I
F(AV)
@ 85°C
I
O(RMS)
(*)
I
TSM
@ 50Hz
I
FSM
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
STG
T
J
(*) As AC switch.
IRK.26
27
60
400
420
800
730
8000
400 to 1600
- 40 to 125
- 40 to125
Units
A
A
A
A
A
2
s
A
2
s
A
2
√s
V
o
o
C
C
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1
IRK.26 Series
Bulletin I27130 rev. C 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
06
08
IRK.26
10
12
14
16
V
RRM
, maximum
repetitive
peak reverse voltage
V
400
600
800
1000
1200
1400
1600
V
RSM
, maximum
V
DRM
, max. repetitive I
RRM
non-repetitive
peak off-state voltage, I
DRM
peak reverse voltage
gate open circuit
125°C
V
500
700
900
1100
1300
1500
1700
V
400
600
800
1000
1200
1400
1600
mA
15
On-state Conduction
Parameters
I
T(AV)
I
F(AV)
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
or
I
FSM
Max. peak, one cycle
non-repetitive on-state
or forward current
60
A
400
420
335
350
470
490
It
2
2
IRK.26
27
27
Units
Conditions
180
o
conduction, half sine wave,
T
C
= 85
o
C
I
(RMS)
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
reapplied
or
I
(RMS)
Sinusoidal
half wave,
Initial T
J
= T
J
max.
No voltage
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
No voltage
reapplied
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
Initial T
J
= T
J
max.
Max. I t for fusing
800
730
560
510
1100
1000
A
2
s
I
2
√t
Max. I
2
√t
for fusing (1)
voltage (2)
8000
0.92
0.95
12.11
11.82
1.95
A
2
√s
V
mΩ
t= 0.1 to 10ms, no voltage reappl. T
J
=T
J
max
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= 25
o
C, from 0.67 V
DRM
,
I
TM
=π x I
T(AV)
,
I = 500mA,
g
V
T(TO)
Max. value of threshold
r
Max. value of on-state
slope resistance (2)
V
TM
V
FM
di/dt
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
I
H
I
L
Max. holding current
Max. latching current
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25
o
C
t
V
150
200
A/µs
t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
mA
400
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V, resistive load
(3) 16.7% x
π
x I
AV
< I <
π
x I
AV
(1) I
2
t for time t
x
=
I
2
√
t x
√
t
x
(4) I >
π
x I
AV
(2) Average power
=
V
T(TO)
x I
T(AV)
+
r
t
x (I
T(RMS)
)
2
2
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IRK.26 Series
Bulletin I27130 rev. C 09/97
Triggering
Parameters
P
GM
I
GM
Max. peak gate power
IRK. 26
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
Units
W
A
Conditions
P
G(AV)
Max. average gate power
Max. peak gate current
gate voltage
V
GT
Max. gate voltage
required to trigger
I
GT
Max. gate current
required to trigger
V
GD
I
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
-V
GM
Max. peak negative
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
V
mA
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Blocking
Parameters
I
RRM
I
DRM
V
INS
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
RMS isolation voltage
2500 (1 min)
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
V/µs
V
50 Hz, circuit to base, all terminals
shorted
T
J
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
15
mA
T
J
= 125
o
C, gate open circuit
IRK. 26
Units
Conditions
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16 S90.
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
IRK.26
- 40 to 125
- 40 to 125
Units
Conditions
Junction operating
temperature range
Storage temp. range
°C
R
thJC
Max. internal thermal
resistance, junction
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
0.1
5
Nm
3
83 (3)
TO-240AA
g (oz)
JEDEC
0.31
K/W
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness
<
0.02 mm
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
Per module, DC operation
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IRK.26 Series
Bulletin I27130 rev. C 09/97
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRK.26
Sine half wave conduction
180
o
Rect. wave conduction
30
o
120
o
90
o
60
o
180
o
120
o
0.28
90
o
0.36
60
o
0.49
30
o
0.73
Units
°C/W
0.23
0.27
0.34
0.48
0.73
0.17
Outlines Table
IRKT26/.. (*)
Screws M5 x 0.8
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
30 ± 0.5
(1.18 ± 0.02)
(1.18 ± 0.04)
29 ± 0.5
(1.13 ± 0.02)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
IRKH26/.. (*)
Screws M5 x 0.8
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0. 03)
(1.18 ± 0.04)
30 ± 0.1
(0.24 ± 0.01)
24 ± 0.5
5.8 ± 0.25
(0.94 ± 0.02)
(0.23 ± 0.01)
6.3 ± 0.3
(0.25 ± 0.01)
6.3 ± 0.3
(0.25 ± 0.01)
(0.24 ± 0.01)
6.1 ± 0.3
6.1 ± 0.3
24 ± 0.5
(0.94 ± 0.02)
2
3
1
20.5 ± 0.75
(0.81 ± 0.03)
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
20.5 ± 0.75
(0.81 ± 0.03)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
4 5
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
92 ± 0.5
(3.62 ± 0.02)
IRKL26/.. (*)
Screws M5 x 0.8
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
6.3 ± 0.3
(0.25 ± 0.01)
(0.24 ± 0.01)
6.1 ± 0.3
24 ± 0.5
(0.94 ± 0.02)
20.5 ± 0.75
(0.81 ± 0.03)
2
3
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
All dimensions in millimeters (inches)
(*)
For terminals connections, see Circuit configurations Table
NOTE: To order the Optional Hardware see Bulletin I27900
4
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Pitch 4.0 ± 0.2
(0.16 ± 0.01)
(1.18 ± 0.04)
30 ± 0.1
4 5
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
2
3
7 6
30 ± 0.1
IRK.26 Series
Bulletin I27130 rev. C 09/97
Circuit Configurations Table
IRKT
(1)
~
IRKH
(1)
~
IRKL
(1)
~
+
(2)
+
(2)
+
(2)
-
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1
(4) (5)
-
(3)
-
(3)
K2 G2
(7) (6)
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
-
-
-
-
-
T
2
26
3
/
16 S90
4
5
IRK.27 types
With no auxiliary cathode
6
13.8 (0.53)
4
Module type
Circuit configuration (See Circuit Configuration table)
Current code
* *
Voltage code (See Voltage Ratings table)
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
* *
Available with no auxiliary cathode.
To specify change:
e.g. : IRKT27/16 etc.
26 to 27
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
IRK.26.. Series
R
thJC
(DC) = 0.62 K/W
120
130
IRK.26.. Series
R
thJC
(DC) = 0.62 K/W
120
110
Conduction Angle
110
Conduction Period
100
30°
90
60°
90°
120°
100
30°
60°
90°
180°
90
120°
180°
DC
40
50
80
0
5
10
15
20
25
30
Average On-state Current (A)
80
0
10
20
30
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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