NEC's NPN SILICON RF
TWIN TRANSISTOR
FEATURES
•
•
•
•
LOW VOLTAGE, LOW CURRENT OPERATION
SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
LOW HEIGHT PROFILE:
1
UPA862TD
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TD
(TOP VIEW)
1.0±0.05
0.8
+0.07
-0.05
(Top View)
0.15±0.05
6
Just 0.50 mm high
0.4
TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
1.2
+0.07
-0.05
0.8
C1
1
Q1
6
B1
vY
2
5
E1
4
0.4
2
Q2
5
E2
•
IDEAL FOR 1-2 GHz OSCILLATORS
3
C2
3
4
B2
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN
high frequency silicon bipolar chip. The NE851 is an excellent
oscillator chip, featuring low 1/f noise and high immunity to
pushing effects. The NE685 is an excellent buffer transistor,
featuring low noise and high gain. NEC's new ultra small TD
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
0.5±0.05
0.125
+0.1
-0.05
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current
Feedback
Gain
1
at
V
CE
= 3 V, I
C
= 10 mA
GHz
pF
dB
dB
nA
nA
100
GHz
pF
dB
dB
dB
3.0
4.5
5.0
120
6.5
0.6
4.0
5.5
1.9
2.5
0.8
7
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Capacitance
2
Insertion Power Gain at V
CE
= 3 V, I
C
=10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Feedback
Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 1 V, I
C
=5 mA, f = 2 GHz
Insertion Power GainIat V
CE
= 1 V, I
C
=15 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
UNITS
nA
nA
75
10
110
12
0.4
8.5
1.5
2.5
600
600
145
0.7
MIN
UPA862TD
TD
TYP
MAX
100
100
150
Q1
f
T
Cre
|S
21E
|
2
NF
I
CBO
I
EBO
h
FE
Q2
f
T
Cre
|S
21E
|
2
|S
21
|S
21E
|
2E
|
2
NF
Notes: 1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories
UPA862TD
ABSOLUTE MAXIMUM RATINGS
1,2
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
Q1
9
6
2
30
Q2
9
5.5
1.5
100
ORDERING INFORMATION
PART NUMBER
UPA862TD-T3
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
180
192
210 Total
150
150
-65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm
2
x 1.0 mm(t) glass epoxy PCB
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Total Power Dissipation, P
tot
(mW)
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0 mm (t) )
250
210
200
2 Elements in total
190
180
150
Q2
Q1
100
50
0
25
50
75
100
125
150
Ambient Temperature, T
A
(°C)
Q1
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Q2
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
Reverse Transfer Capacitance, C
re
(pF)
Reverse Transfer Capacitance, C
re
(pF)
0.5
f = 1 MHz
f = 1 MHz
0.4
0.8
0.3
0.6
0.2
0.4
0.1
0.2
0
2
4
6
8
10
0
2
4
6
8
10
Collector to Base Voltage, V
CB
(V)
Collector to Base Voltage, V
CB
(V)
UPA862TD
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
Q1
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 1 V
100
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Collector Current, I
C
(mA)
1
Collector Current, I
C
(mA)
0.5
0.6
0.7
0.8
0.9
1.0
10
10
1
0.1
0.1
0.01
0.01
0.001
0.001
0.0001
0.4
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, V
BE
(V)
Base to Emitter Voltage, V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 2 V
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current, I
C
(mA)
1
Collector Current, I
C
(mA)
0.5
0.6
0.7
0.8
0.9
1.0
10
10
1
0.1
0.1
0.01
0.01
0.001
0.001
0.0001
0.4
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, V
BE
(V)
Base to Emitter Voltage, V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
400
µa
Collector Current, I
C
(mA)
50
30
300
µa
270
µa
240
µa
240
µa
20
180
µa
150
µa
120
µa
10
90
µa
60
µa
I
B
= 30
µa
0
1
2
3
4
5
6
7
8
360
µa
320
µa
Collector Current, I
C
(mA)
40
280
µa
240
µa
30
200
µa
160
µa
120
µa
20
10
80
µa
I
B
= 40
µa
0
1
2
3
4
5
6
7
8
Collector to Emitter Voltage, V
CE
(V)
Collector to Emitter Voltage, V
CE
(V)
UPA862TD
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
Q1
DC CURRENT GAIN
vs. COLLECTOR CURRENT
1000
V
CE
= 1 V
1000
V
CE
= 1 V
Q2
DC CURRENT GAIN
vs. COLLECTOR CURRENT
DC Current Gain, H
FE
100
DC Current Gain, H
FE
1
10
100
100
10
0.1
10
0.1
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
1000
V
CE
= 2 V
1000
DC CURRENT GAIN
vs. COLLECTOR CURRENT
V
CE
= 2 V
DC Current Gain, H
FE
100
DC Current Gain, H
FE
1
10
100
100
10
0.1
10
0.1
1
10
100
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
10
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 2 GHz
8
Gain Bandwidth Product, f
T
(GHz)
12
10
8
6
4
2
0
0.1
1
10
100
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 2 V
f = 2 GHz
6
4
2
0
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
UPA862TD
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
Q1
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
35
Q2
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
V
CE
= 1 V
I
C
= 10 mA
30
25
20
15
10
5
0
0.1
MSG
MAG
V
CE
= 1 V
I
C
= 5 mA
30
25
MSG
20
MAG
15
10
5
|S
21e
|
2
0
0.1
1
10
|S
21e
|
2
1
10
Frequency, f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Frequency, f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
35
V
CE
= 2 V
I
C
= 10 mA
30
MSG
25
MAG
20
15
10
5
0
0.1
V
CE
= 1 V
I
C
= 15 mA
30
25
20
15
10
5
0
0.1
MSG
MAG
|S
21e
|
2
|S
21e
|
2
1
10
1
10
Frequency, f (GHz)
Frequency, f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
35
V
CE
= 3 V
I
C
= 10 mA
30
MSG
25
20
15
10
5
0
0.1
MAG
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
V
CE
= 2 V
I
C
= 5 mA
30
25
MSG
20
15
10
5
|S
21e
|
2
0
0.1
1
10
MAG
|S
21e
|
2
1
10
Frequency, f (GHz)
Frequency, f (GHz)
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