8 Megabit (256K x 32-Bit)
EEPROM MCM
79C0832
Logic Diagram
Memory
F
EATURES
:
• Eight 128k x 8-bit EEPROM MCM
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- >100 krad (Si), depending upon space mission
• Excellent Single event effects
- SEL
TH
> 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
- SEU = 18 MeV/mg/cm
2
write mode
• Package: 96 pin R
AD
-P
AK
® quad flat pack
• High endurance
- 10,000 cycles/byte, 10 year data retention
• Page Write Mode: 1 to 8 X 128 byte page
• High Speed:
- 150 and 200 ns maximum access times
• Automatic programming
- 10 ms automatic Page/Byte write
• Low power dissipation
- 160 mW/MHz active current
- 880 µW standby current
D
ESCRIPTION
:
Maxwell Technologies’ 79C0832 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, depending upon space misssion. Using Maxwell Tech-
nologies’ patented radiation-hardened R
AD
-P
AK
® MCM
packaging technology, the 79C0832 is the first radiation-hard-
ened 8 megabit MCM EEPROM for space application. The
79C0832 uses eight 1 Megabit high speed CMOS die to yield
an 8 megabit product. The 79C0832 is capable of in-system
electrical byte and page programmability. It has a 128 x 8 byte
page programming function to make its erase and write opera-
tions faster. It also features Data Polling and a Ready/Busy
signal to indicate the completion of erase and programming
operations. In the 79C0832, hardware data protection is pro-
vided with the RES pin, in addition to noise protection on the
WE signal and write inhibit on power on and off. Software data
protection is implemented using the JEDEC optional standard
algorithm.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class K.
1000576
12.19.01 Rev 5
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2001 Maxwell Technologies
All rights reserved.
8 Megabit (256K x 32-Bit) EEPROM MCM
T
ABLE
1. 79C0832 P
INOUT
D
ESCRIPTION
P
IN
84-77, 29-37
48-55, 66-73, 96,
1-7, 18-25
61
41, 43
36
10, 17, 28, 40, 44,
58, 65, 76, 87, 93
8, 9, 10-16, 26, 27,
38, 42, 46, 56, 57,
59, 60, 62-64, 74,
75, 85, 86, 88-92,
94, 95
39
47
S
YMBOL
ADDR0 to ADDR16
I/O0 to I/O31
OE
CE0-1
WE
5V
GND
D
ESCRIPTION
Address Input
Data Input/Output
Output Enable
Chip Enable 0 through 1
Write Enable
Power Supply
Ground
79C0832
Memory
RDY/BUSY
RES
Ready/Busy
Reset
T
ABLE
2. 79C0832 A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage
Input Voltage
Operating Temperature Range
Storage Temperature Range
1. V
IN
min = -3.0V for pulse width <50ns.
S
YMBOL
V
CC
V
IN
T
OPR
T
STG
M
IN
-0.6
-0.5
1
-55
-65
M
AX
7.0
7.0
125
150
U
NIT
V
V
°
C
°
C
T
ABLE
3. 79C0832 R
ECOMMENDED
DC O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
RES_PIN
Operating Temperature Range
1. V
IL
min = -1.0V for pulse width < 50 ns
S
YMBOL
V
CC
V
IL
V
IH
V
H
T
OPR
M
IN
4.5
-0.3
1
2.2
V
CC
-0.5
-55
M
AX
5.5
0.8
V
CC
+0.3
V
CC
+1
125
U
NIT
V
V
V
V
°
C
1000576
12.19.01 Rev 5
All data sheets are subject to change without notice
2
©2001 Maxwell Technologies
All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
T
ABLE
4. 79C0832 C
APACITANCE
(T
A
= 25
°
C, f = 1 MHz)
P
ARAMETER
Input Capacitance: V
IN
= 0V
1
Output Capacitance: V
OUT
= 0V
1
1. Guaranteed by design.
S
YMBOL
C
IN
C
OUT
M
IN
--
--
79C0832
M
AX
6
12
U
NIT
pF
pF
T
ABLE
5. 79C0832 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Input Leakage Current
Standby V
CC
Current
T
EST
C
ONDITION
(V
CC
= 5.5V, V
IN
= 5.5V)
S
YMBOL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
M
IN
--
--
--
--
--
--
V
IL
V
IH
V
H
Data Lines – V
CC
= Min, Iol = 2.1mA
RDYZ/BSY_Lines – V
CC
Min, Iol = 12mA
Data Lines – V
CC
= Min, Ioh = -400µA
RDYZ/BSY_Lines – V
CC
Min, Ioh = -12mA
1. I
IL
on RES = 800 uA MAX.
2. One CE Active.
V
OL
V
OL
V
OH
V
OH
M
AX
16
1
16
80
2
4
2
60
2
200
2
0.8
2.2
V
CC
-0.5
--
2.4
3.15
0.4
0.4
--
--
V
V
V
V
V
V
V
U
NITS
µA
µA
Output Leakage Current (V
CC
= 5.5V, V
OUT
= 5.5V/0.4V)
CE = V
CC
CE = V
IH
I
OUT
= 0mA, Duty = 100%, Cycle = 1 us at
V
CC
= 5.5V
I
OUT
= 0mA, Duty = 100%, Cycle = 150 ns
at V
CC
= 5.5V
Memory
µA
mA
mA
Operating V
CC
Current
Input Voltage
RES_PIN
Output Voltage
1000576
12.19.01 Rev 5
All data sheets are subject to change without notice
3
©2001 Maxwell Technologies
All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
T
ABLE
6. 79C0832 AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Access Time CE = OE = V
IL
, WE = V
IH
-150
-200
Chip Enable Access Time OE = V
IL
, WE = V
IH
-150
-200
Output Enable Access TIme CE = V
IL
, WE = V
IH
-150
-200
Output Hold to Address Change CE = OE =V
IL
, WE = V
IH
-150
-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-150
-200
CE = OE = V
IL
, WE = V
IH
-150
-200
RES to Output Delay CE = OE = V
IL
, WE = V
IH3
-150
-200
S
YMBOL
t
ACC
M
IN
--
--
--
--
0
0
0
0
M
AX
150
200
ns
150
200
ns
75
125
ns
--
--
U
NIT
ns
t
CE
t
OE
t
OH
Memory
t
DF
t
DFR
ns
0
0
0
0
0
0
50
60
ns
350
450
ns
450
650
T
RR
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing = 0.8 V/1.8 V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE
7. 79C0832 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATION
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Setup Time
-150
-200
Chip Enable to Write Setup Time (WE controlled)
-150
-200
S
YMBOL
t
AS
M
IN 1
0
0
0
0
M
AX
--
--
ns
--
--
U
NITS
ns
t
CS
1000576
12.19.01 Rev 5
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies
All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Write Pulse Width
CE controlled
-150
-200
WE controlled
-150
-200
Address Hold Time
-150
-200
Data Setup Time
-150
-200
Data Hold Time
-150
-200
Chip Enable Hold Time (WE controlled)
-150
-200
Write Enable to Write Setup Time (CE controlled)
-150
-200
Write Enable Hold Time (CE controlled)
-150
-200
Output Enable to Write Setup Time
-150
-200
Output Enable Hold Time
-150
-200
Write Cycle Time
2
-150
-200
Data Latch Time
-150
-200
Byte Load Window
-150
-200
Byte Load Cycle
-150
-200
1000576
12.19.01 Rev 5
79C0832
M
IN 1
M
AX
U
NITS
ns
250
350
250
350
150
200
120
200
10
20
0
0
0
0
0
0
0
0
0
0
--
--
300
400
100
200
0.55
0.95
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ms
10
20
ns
--
--
µs
--
--
µs
30
50
T
ABLE
7. 79C0832 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATION
S
YMBOL
t
CW
t
WP
t
AH
t
DS
t
DH
Memory
t
CH
t
WS
t
WH
t
OES
t
OEH
t
WC
t
DL
t
BL
t
BLC
All data sheets are subject to change without notice
5
©2001 Maxwell Technologies
All rights reserved
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