Preliminary
RJH60F7ADPK
Silicon N Channel IGBT
High Speed Power Switching
Features
•
High speed switching
•
Low on-state voltage
•
Fast recovery diode
REJ03G1837-0100
Rev.1.00
Oct 13, 2009
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
≤
5
μs,
duty cycle
≤
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
90
50
180
100
328.9
0.38
2.0
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6
RJH60F7ADPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
t
rr
Min
⎯
⎯
4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
1.6
4890
198
83
48
36
122
95
1.6
140
Max
100
±1
8
1.75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.1
⎯
Unit
μA
μA
V
V
V
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 50 A, V
GE
= 15V
Note3
I
C
= 90 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A, Resistive Load
V
CC
= 300 V
V
GE
= 15 V
Note3
Rg = 5
Ω
I
F
= 20 A
Note3
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
I
F
= 20 A
di
F
/dt = 100 A/μs
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6
RJH60F7ADPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
160
Typical Output Characteristics
Pulse Test
Ta = 25
°
C
8.6 V
10 V
120
15 V
7.6 V
9V
8V
8.4 V
Collector Current I
C
(A)
100
10
PW
=
10
μ
s
10
Collector Current I
C
(A)
0
μ
s
80
1
Tc = 25°C
Single pulse
40
V
GE
= 7 V
0
0.1
1
10
100
1000
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
2.5
2.0
1.5
1.0
I
C
= 20 A
0.5
0
0
4
8
12
16
20
50 A
90 A
Pulse Test
Ta = 25
°
C
160
Collector Current I
C
(A)
120
80
Tc = 75°C
40
25°C
0
0
2
4
6
8
10
–25°C
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.0
I
C
= 90 A
1.6
50 A
20 A
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
7
6
5
4
1 mA
3
2
1
0
−25
V
CE
= 10 V
Pulse Test
0
25
50
75
100 125 150
I
C
= 10 mA
1.2
0.8
0.4
0
−25
V
GE
= 15 V
Pulse Test
0
25
50
75
100 125 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
RJH60F7ADPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage (Typical)
10000
V
GE
= 0 V
Pulse Test
Ta = 25
°
C
Cies
Forward Current vs. Forward Voltage (Typical)
100
Forward Current I
F
(A)
Capacitance C (pF)
80
1000
60
40
100
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
Coes
Cres
20
0
0
1
2
3
4
5
10
250
300
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
I
C
= 50 A
Ta = 25
°
C
V
CE
V
GE
16
1000
Switching Characteristics (Typical) (1)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
td(off)
100
td(on)
tf
600
12
V
CE
= 600 V
300 V
400
8
Switching Time t (ns)
10
tr
200
V
CE
= 600 V
300 V
0
0
40
80
120
160
4
0
200
1
1
10
100
1000
Gate Charge Qg (nc)
Collector Current I
C
(A)
Switching Characteristics (Typical) (2)
10000
I
C
= 50 A, R
L
= 6
Ω
V
GE
= 15 V, Ta = 25
°
C
Switching Characteristics (Typical) (3)
1000
I
C
= 50 A, R
L
= 6
Ω
V
GE
= 15 V
Switching Time t (ns)
1000
Switching Time t (ns)
td(off)
100
tr
tf
100
td(off)
td(on)
td(on)
10
1
tr
tf
10
10
100
0
20
40
60
80
100 120 140
Gate Resistance Rg (Ω)
Case Temperature Tc (°C)
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 4 of 6
RJH60F7ADPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
2
0.0
0.01
1 shot pulse
θ
j – c(t) =
γs
(t) •
θ
j – c
θ
j – c = 0.38°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.01
10
μ
100
μ
Pulse Width
PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
2
0.0
0.01
1 shot pulse
θ
j – c(t) =
γs
(t) •
θ
j – c
θ
j – c = 2°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.01
10
μ
100
μ
Pulse Width
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
PW (s)
Waveform
90%
Vin
10%
90%
90%
Rg
Vin = 15 V
D.U.T.
V
CC
Ic
td(on)
ton
10%
tr
10%
td(off)
toff
tf
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Page 5 of 6
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