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RJH60D1DPP-M0: 产品描述16 A, 600 V, N-CHANNEL IGBT, TO-220AB; 产品类别半导体分立半导体; 文件大小158KB，共4页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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RJH60D1DPP-M0概述

16 A, 600 V, N-CHANNEL IGBT, TO-220AB

16 A, 600 V, N沟道 IGBT, TO-220AB

RJH60D1DPP-M0规格参数

参数名称	属性值
端子数量	3
额定关断时间	140 ns
最大集电极电流	16 A
最大集电极发射极电压	600 V
加工封装描述	TO-220FL, 3 PIN
状态	TRANSFERRED
包装形状	矩形的
包装尺寸	凸缘安装
端子形式	THROUGH-孔
端子位置	单一的
包装材料	塑料/环氧树脂
结构	单一的 WITH BUILT-IN 二极管
元件数量	1
晶体管应用	POWER 控制
晶体管元件材料	硅
通道类型	N沟道
晶体管类型	INSULATED GATE BIPOLAR
额定导通时间	60 ns

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Preliminary

RJH60D1DPP-M0

Silicon N Channel IGBT

Application: Inverter

Features

•

High breakdown-voltage

•

Low on-voltage

•

Built-in diode

REJ03G1839-0100

Rev.1.00

Oct 14, 2009

Outline

RENESAS Package code: PRSS0003AF-A

(Package name: TO-220FL)

1. Gate

2. Collector

3. Emitter

2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage / diode reverse voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW

≤

μs,

duty cycle

≤

2. Value at Tc = 25°C

Symbol

CES

/ V

GES

ic(peak)

Note1

(peak)

Note1

C Note2

θj-c

Note2

Tstg

Ratings

600

±30

6.25

150

–55 to +150

Unit

°C/ W

°C

REJ03G1839-0100 Rev.1.00 Oct 14, 2009

Page 1 of 3

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Colophon .7.2

RJH60D1DPP-M0相似产品对比

	RJH60D1DPP-M0	RJH60D1DPP-M0-T2
描述	16 A, 600 V, N-CHANNEL IGBT, TO-220AB	16 A, 600 V, N-CHANNEL IGBT, TO-220AB
端子数量	3	3
端子形式	THROUGH-孔	THROUGH-HOLE
端子位置	单一的	SINGLE
元件数量	1	1
晶体管应用	POWER 控制	POWER CONTROL
晶体管元件材料	硅	SILICON

RJH60D1DPP-M0

RJH60D1DPP-M0概述

RJH60D1DPP-M0规格参数

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