Features
•
Operating Voltage: 3.3V
•
Access Time: 40 ns
•
Very Low Power Consumption
•
•
•
•
•
•
•
•
– Active: 160 mW (Max)
– Standby: 70 µW (Typ)
Wide Temperature Range: -55°C to +125°C
MFP 32 leads 400 Mils Width Package
TTL Compatible Inputs and Outputs
Asynchronous
Designed on 0.35µm Process
No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 200 Krad (Si) according to MIL STD 883 Method 1019
Quality grades: QML Q or V with SMD 5962-02501
Description
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an
extremely low standby supply current with a fast access time at 40 ns. The high stabil-
ity of the 6T cell provides excellent protection against soft errors due to noise.
The M65609E is processed according to the methods of the latest revision of the MIL
PRF 38535 and ESCC 9000.
It is produced on the same process as the MH1RT sea of gates series.
Rad Hard
128K x 8
3.3-volt
Very Low Power
CMOS SRAM
M65609E
Rev. 4158I–AERO–07/07
1
M65609E
Block Diagram
Pin Configuration
32 pins Flatpack 400 MILS
Pin Description
Name
A0 - A16
I/O1 - I/O8
CS
1
CS
2
WE
OE
V
CC
GND
Description
Address Inputs
Data Input/Output
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Power
Ground
2
4158I–AERO–07/07
Table 1.
Truth Table
CS
1
H
X
L
L
L
Note:
CS
2
X
L
H
H
H
WE
X
X
H
L
H
OE
X
X
L
X
H
Inputs/
Outputs
Z
Z
Data Out
Data In
Z
Mode
Deselect/
Power-down
Deselect/
Power-down
Read
Write
Output
Disable
L = low, H = high, X = H or L, Z = high impedance.
3
M65609E
4158I–AERO–07/07
M65609E
Electrical Characteristics
Absolute Maximum Ratings
Supply Voltage to GND Potential............................ -0.5V + 5V
DC Input Voltage............................ GND - 0.3V to
V
CC
+ 0.3V
DC Output Voltage High Z State .... GND - 0.3V to
V
CC
+ 0.3V
Storage Temperature .................................... -65°C to + 150°C
Output Current Into Outputs (Low) ............................... 20 mA
Electro Statics Discharge Voltage................................. > 500V
(MIL STD 883D Method 3015.3)
*NOTE:
Stresses greater than those listed under Absolute Max-
imum Ratings may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Military Operating Range
Operating Voltage
3.3V + 0.3V
Operating Temperature
-55
°
C to + 125
°
C
Recommended DC Operating Conditions
Parameter
Description
Supply voltage
Ground
Input low voltage
Input high voltage
Min
3
0.0
GND - 0.3
2.2
Typ
3.3
0.0
0.0
–
Max
3.6
0.0
0.8
Unit
V
V
V
V
V
CC
Gnd
V
IL
V
IH
V
CC
+ 0.3
Capacitance
Parameter
C
IN(1)
C
OUT(1)
Note:
Description
Input low voltage
Output high voltage
Min
–
–
Typ
–
–
Max
8
8
Unit
pF
pF
1. Guaranteed but not tested.
4
4158I–AERO–07/07
DC Parameters
DC Test Conditions
Parameter
IIX
(1)
Description
Input leakage
current
Output leakage
current
Output low voltage
Output high voltage
Minimum
-1
-1
-
2.4
Typical
–
–
–
–
Maximum
1
1
0.4
–
Unit
µA
µA
V
V
IOZ
(1)
VOL
VOH
1.
2.
3.
(2)
(3)
Gnd < Vin <
V
CC
, Gnd < Vout <
V
CC
Output Disabled.
V
CC
min. IOL = 4 mA.
V
CC
min. IOH = -2 mA.
Consumption
Symbol
ICCSB
(1)
ICCSB
1 (2)
ICCOP
(3)
1.
2.
3.
Description
Standby supply current
Standby supply current
Dynamic operating
current
65609E-40
1.5
1
45
Unit
mA
mA
mA
Value
max
max
max
CS
1
> VIH or CS
2
< VIL and CS
1
< VIL.
CS
1
>
V
CC
- 0.3V or, CS
2
< Gnd + 0.3V and CS
1
< 0.2V
F = 1/T
AVAV
, I
OUT
= 0 mA, W = OE = VIH, Vin = Gnd or
V
CC
,
V
CC
max.
5
M65609E
4158I–AERO–07/07
FPGA/CPLD
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