Bulletin I25201
80RIA SERIES
PHASE CONTROL THYRISTORS
Stud Version
80A
Features
All diffused design
Glass-metal seal up to 1200V
International standard case TO-209AC (TO-94)
Threaded studs UNF 1/2 - 20UNF2A or ISO M12x1.75
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
80RIA
80
85
125
1900
1990
18
16
400 to 1200
110
- 40 to 125
Unit
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AC (TO-94)
1
80RIA Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
40
80RIA
80
120
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
I
DRM
/I
RRM
max.
@ T
J
= 125°C
mA
15
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
12
80RIA
80
85
125
1900
1990
1600
1675
A
Units
A
°C
A
Conditions
180° conduction, half sine wave
DC @ 75°C case temperature
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
18
16
12.7
11.7
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
180.5
0.99
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
V
1.13
(I >
π
x I
T(AV)
),T
J
= T
J
max.
2222222222222
2.29
mΩ
1.84
1.60
150
400
mA
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
),T
J
= T
J
max.
I
pk
= 250A, T
J
= 25°C t
p
= 10ms sine pulse
T
J
= 25°C, anode supply 12V resistive load
2
80RIA Series
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
300
A/µs
80RIA
Units
Conditions
T
J
= 125°C, V
d
= rated V
DRM
, I
TM
= 2xdi/dt snubber
0.2µF, 15Ω, Gate pulse: 20V, 65Ω, t
p
= 6µs, t
r
= 0.5µs
Per JEDEC Standard RS-397, 5.2.2.6.
Gate pulse: 10V, 15Ω source, t
p
= 6µs, t
r
= 0.1µs,
V
d
= rated V
DRM
, I
TM
= 50Adc, T
J
= 25°C.
I
TM
= 50A, T
J
= T
J
max, di/dt = -5A/µs min., V
R
= 50V,
dv/dt = 20V/µs, Gate bias: 0V 25Ω, t
p
= 500µs
t
d
t
Typical delay time
1
µs
q
Typical turn-off time
110
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
80RIA
500
15
Units
V/ µs
mA
Conditions
T
J
= 125°C exponential to 67% rated V
DRM
T
J
= 125°C rated V
DRM
/V
RRM
applied
23
Triggering
Parameter
P
GM
Maximum peak gate power
80RIA
12
3
3
20
Units
W
A
Conditions
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
10
270
120
60
mA
T
J
= T
J
max, t
≤
5ms
p
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
V
T
J
= 25°C
T
J
= 125°C
mA
T
J
= T
J
max
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 6V an-
ode-to-cathode applied
V
GT
Max. DC gate voltage required
to trigger
3.5
2.5
1.5
I
GD
DC gate current not to trigger
6
V
GD
DC gate voltage not to trigger
0.25
V
3
80RIA Series
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
80RIA
-40 to 125
-40 to 150
0.30
Units
°C
Conditions
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, ± 10%
DC operation
K/W
0.1
15.5 (137)
14 (120)
Nm
(lbf-in)
g
Mounting surface, smooth, flat and greased
Non lubricated threads
Lubricated threads
wt
Approximate weight
Case style
130
TO-209AC(TO-94)
See Outline Table
12
∆R
thJ-C
Conduction
(The following table shows the increment of thermal resistence R
thJ-C
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.042
0.050
0.064
0.095
0.164
0.030
0.052
0.070
0.100
0.165
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
8
1
0
2
RIA 120
3
4
M
5
2222222222222
1
2
-
-
I
TAV
x 10A
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
3
4
5
-
-
-
RIA = Essential part number
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
None = Stud base 1/2 "20UNF - 2A threads
M
= Stud base metric threads M12 x 1.75 E 6
4
80RIA Series
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
8.5 (0.3) DIA.
4.3 (0.17) DIA.
7) M
IN
.
(0. 3
9.5
2.5 (0.10) MAX.
C.S. 16mm 2
(.025 s.i.)
RED SILICON RUBBER
157 (6.18)
170 (6.69)
RED CATHODE
WHITE GATE
2
C.S. 0.4 mm
(.0006 s.i.)
20
(0.
7
FLEXIBLE LEAD
9)
M
IN
.
Fast-on Terminals
AMP. 280000-1
REF-250
55 (2.17) MIN.
215 (8.46)
RED SHRINK
WHITE SHRINK
24 (0.94) MAX.
10 (0.39)
10 (0.39) MAX.
23.5 (0.92) MAX. DIA.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A *
29.5 (1.16) MAX.
23
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M12 x 1.75 E 6
GLASS-METAL SEAL
FLAG TERMINALS
23.5 DIA.
(0.93) MAX.
1.5 (0.06) DIA.
5.5 (0.22) DIA.
(0 39)
(0.47)
12
44 (1.73)
47 (1.85)
5.6 (0.22)
10 (0.39)
21(0.83)
MAX.
MAX.
1/2"-20UNF-2A *
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
SW 27
24 (0.94) MAX.
2.4 (0.09)
29.5 (1.16)
* FOR METRIC DEVICE: M12 x 1.75 E 6
5
(0.65)
16.5
10
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