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256K x 36, 512K x 18
3.3V Synchronous ZBT™ SRAMs
3.3V I/O, Burst Counter
Flow-Through Outputs
Features
256K x 36, 512K x 18 memory configurations
Supports high performance system speed - 100 MHz
(7.5 ns Clock-to-Data Access)
ZBT
TM
Feature - No dead cycles between write and read
cycles
Internally synchronized output buffer enable eliminates the
need to control
OE
Single R/W (READ/WRITE) control pin
W
4-word burst capability (Interleaved or linear)
Individual byte write (BW
1
-
BW
4
) control (May tie active)
BW
Three chip enables for simple depth expansion
3.3V power supply (±5%)
3.3V (±5%) I/O Supply (V
DDQ
)
Power down controlled by ZZ input
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA).
IDT71V65703
IDT71V65903
x
x
x
x
x
x
x
x
x
x
x
x
Description
The IDT71V65703/5903 are 3.3V high-speed 9,437,184-bit
(9 Megabit) synchronous SRAMs organized as 256K x 36 / 512K x 18.
They are designed to eliminate dead bus cycles when turning the bus
around between reads and writes, or writes and reads. Thus they have
been given the name ZBT
TM
, or Zero Bus Turnaround.
Address and control signals are applied to the SRAM during one clock
cycle, and on the next clock cycle the associated data cycle occurs, be it
read or write.
The IDT71V65703/5903 contain address, data-in and control signal
registers. The outputs are flow-through (no output data register). Output
enable is the only asynchronous signal and can be used to disable the
outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V65703/5903
tobesuspendedaslongasnecessary.Allsynchronousinputsareignoredwhen
CEN
is high and the internal device registers will hold their previous values.
There are three chip enable pins (CE
1
, CE
2
,
CE
2
) that allow the
user to deselect the device when desired. If any one of these three is not
asserted when ADV/LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
The data bus will tri-state one cycle after the chip is deselected or a write
is initiated.
The IDT71V65703/5903 have an on-chip burst counter. In the burst
mode, the IDT71V65703/5903 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the
LBO
input pin. The
LBO
pin selects between linear and
interleaved burst sequence. The ADV/LD signal is used to load a new
external address (ADV/LD = LOW) or increment the internal burst counter
(ADV/LD = HIGH).
The IDT71V65703/5903 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC Standard 14mm x 20mm 100-
pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and a 165
fine pitch ball grid array (fBGA).
Pin Description Summary
A
0
-A
18
Address Inputs
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Advance Burst Address/Load New Address
Linear/Interleaved Burst Order
Sleep Mode
Data Input/Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
Asynchronous
Synchronous
Static
Static
5298 tbl 01
CE
1
, CE
2
,
CE
2
OE
R/
W
CEN
BW
1
,
BW
2
,
BW
3
,
BW
4
CLK
ADV/
LD
LBO
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.
FEBRUARY 2009
2002
DECEMBER
DSC-5298/03
1
©2002 Integrated Device Technology, Inc.
IDT71V65703, IDT71V65903, 256K x 36, 512K x 18, 3.3V Synchronous ZBT™ SRAMs with
3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Pin Definitions
(1)
Symbol
A
0
-A
18
ADV/
LD
Pin Function
Address Inputs
Advance / Load
I/O
I
I
Active
N/A
N/A
Description
Synchronous Address inputs. The address register is triggered by a co mbination of the rising edge of
CLK, ADV/
LD
low,
CEN
low, and true chip enables.
ADV/
LD
is a synchronous input that is used to load the internal registers with new address and control
when it is sampled low at the rising edge of clock with the chip selected. When ADV/
LD
is low with
the chip deselected, any burst in progress is terminated. When ADV/
LD
is sampled high then the
inte rnal burst counter is advanced for any burst that was in progress. The external addresses are
ignored when ADV/
LD
is sampled high.
R/
W
signal is a synchronous input that identifies whether the current load cycle initiated is a Read or
Write access to the memory array. The data bus activity for the curre nt cycle takes place one clock
cycle later.
Synchronous Clock Enable Input. When
CEN
is sampled high, all other synchronous inputs, including
clock are ignored and outputs re main unchanged. The effect of
CEN
sampled high on the device
outputs is as if the low to high clock transition did not occur. For normal operation,
CEN
must be
sampled low at rising edge of clock.
Synchronous byte write enables. Each 9-bit byte has its own active low byte write enable. On load
write cycles (When R/
W
and ADV/
LD
are sampled low) the appropriate byte write signal (
BW
1
-
BW
4
)
must be valid. The byte write signal must also be valid on each cycle of a burst write. Byte Write
signals are ignored when R/
W
is sampled high. The appropriate byte(s) of data are written into the
device one cycle later.
BW
1
-
BW
4
can all be tied low if always doing write to the entire 36-bit word.
Synchronous active low chip enable.
CE
1
and
CE
2
are used with CE
2
to enable the IDT71V65703/5903
(
CE
1
or
CE
2
sampled high or CE
2
sampled low) and ADV/
LD
low at the rising edge of clock, initiates
a deselect cycle. The ZBT
TM
has a one cycle deselect, i.e., the data b us will tri-state one clock cycle
after deselect is initiated.
Synchrono us active high chip enable. CE
2
is used with
CE
1
and
CE
2
to enable the chip. CE
2
has
inverted po larity but otherwise identical to
CE
1
and
CE
2
.
This is the clock input to the IDT71V65703/5903. Except for
OE
, all timing references for the device are
made with respect to the rising edge of CLK.
Data input/output (I/O) pins. The data input path is registered, triggered by the rising edge of CLK. The
data output path is flow-through (no output register).
Burst order selection input. When
LBO
is high the Interleaved burst sequence is selected. When
LBO
is low the Linear burst sequence is selected.
LBO
is a static input, and it must not change during
device operation.
Asynchronous output enable.
OE
must be low to read data from the 71V65703/5903. When
OE
is HIGH
the I/O pins are in a high-impedance state.
OE
does not need to be actively controlled for read and
write cycles. In normal operation,
OE
can be tied low.
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the
IDT71V65703/5903 to its lowest power consumption level. Data retention is guaranteed in Sleep Mode.
3.3V core power supply.
3.3V I/O supply.
Ground.
5298 tbl 02
R/
W
Read / Write
I
N/A
CEN
Clock Enable
I
LOW
BW
1
-
BW
4
Individual Byte
Write Enables
I
LOW
CE
1
,
CE
2
Chip Enables
I
LOW
CE
2
CLK
I/O
0
-I/O
31
I/O
P1
-I/O
P4
Chip Enable
Clock
Data Input/Output
Linear Burst
Order
Output Enable
I
I
I/O
I
HIGH
N/A
N/A
LOW
LBO
OE
I
LOW
ZZ
V
DD
V
DDQ
V
SS
NOTE:
Sleep Mode
Power Supply
Power Supply
Ground
I
N/A
N/A
N/A
HIGH
N/A
N/A
N/A
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71V65703, IDT71V65903, 256K x 36, 512K x 18, 3.3V Synchronous ZBT™ SRAMs with
3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram 256K x 36
LBO
Address A [0:17]
CE
1
, CE
2
CE
2
R/W
CEN
ADV/LD
BWx
Input Register
DI
DO
D
Q
Control
D
Q
256K x 36 BIT
MEMORY ARRAY
Address
D
Clk
Q
Control Logic
Mux
Clock
Sel
OE
Gate
Data I/O [0:31], I/O P[1:4]
5298 drw 01
,
6.42
3
IDT71V65703, IDT71V65903, 256K x 36, 512K x 18, 3.3V Synchronous ZBT™ SRAMs with
3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram 512K x 18
LBO
Address A [0:18]
CE
1
, CE
2
CE
2
R/W
CEN
ADV/LD
BWx
Input Register
DI
DO
D
Q
Control
D
Q
512K x 18 BIT
MEMORY ARRAY
Address
D
Clk
Q
Control Logic
Mux
Clock
Sel
OE
Gate
Data I/O [0:15], I/O P[1:2]
5298 drw 01a
,
Recommended DC Operating
Conditions
Symbol
V
DD
V
DDQ
V
SS
V
IH
V
IH
V
IL
Parameter
Core Supply Voltage
I/O Supply Voltage
Ground
Input High Voltage - Inputs
Input High Voltage - I/O
Input Low Voltage
Min.
3.135
3.135
0
2.0
2.0
-0.3
(1)
Typ.
3.3
3.3
0
____
____
____
Max.
3.465
3.465
0
V
DD
+ 0.3
V
DDQ
+ 0.3
0.8
Unit
V
V
V
V
V
V
5298 tbl 04
NOTE:
1. V
IL
(min.) = –1.0V for pulse width less than t
CYC
/2, once per cycle.
6.42
4
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