Standard SRAM, 128KX8, 15ns, CMOS, CDIP32, 0.400 INCH, CERAMIC, DIP-32
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 32 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A991.B.2.B |
| 最长访问时间 | 15 ns |
| JESD-30 代码 | R-CDIP-T32 |
| JESD-609代码 | e0 |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 32 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 128KX8 |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 认证状态 | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 20 |
| Base Number Matches | 1 |
| IDT71024S15D | IDT71024S15L8 | IDT71024S17D | IDT71024S17L8 | IDT71024S20D | |
|---|---|---|---|---|---|
| 描述 | Standard SRAM, 128KX8, 15ns, CMOS, CDIP32, 0.400 INCH, CERAMIC, DIP-32 | Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32 | Standard SRAM, 128KX8, 17ns, CMOS, CDIP32, 0.400 INCH, CERAMIC, DIP-32 | Standard SRAM, 128KX8, 17ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32 | Standard SRAM, 128KX8, 20ns, CMOS, CDIP32, 0.400 INCH, CERAMIC, DIP-32 |
| 零件包装代码 | DIP | DLCC | DIP | DLCC | DIP |
| 包装说明 | DIP, | SON, | DIP, | SON, | DIP, |
| 针数 | 32 | 32 | 32 | 32 | 32 |
| Reach Compliance Code | compliant | unknown | compliant | unknown | compli |
| ECCN代码 | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B |
| 最长访问时间 | 15 ns | 15 ns | 17 ns | 17 ns | 20 ns |
| JESD-30 代码 | R-CDIP-T32 | R-CDSO-N32 | R-CDIP-T32 | R-CDSO-N32 | R-GDIP-T32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bi |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
| 可输出 | YES | YES | YES | YES | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | SON | DIP | SON | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 是否无铅 | 含铅 | - | 含铅 | - | 含铅 |
| 是否Rohs认证 | 不符合 | - | 不符合 | - | 不符合 |
| 峰值回流温度（摄氏度） | 225 | - | 225 | - | 225 |
| 处于峰值回流温度下的最长时间 | 20 | - | 20 | - | 20 |
| 厂商名称 | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 长度 | - | 20.828 mm | - | 20.828 mm | 41.91 mm |
| 座面最大高度 | - | 2.54 mm | - | 2.54 mm | 5.334 mm |
| 端子节距 | - | 1.27 mm | - | 1.27 mm | 2.54 mm |
| 宽度 | - | 10.16 mm | - | 10.16 mm | 10.16 mm |
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