CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 30 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTC314TKGP
CURRENT 600 mAmpere
FEATURE
* Small surface mounting type. (SOT-23)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation(V
CE(sat)
=40mV
at I
C
/I
B
=50mA/2.5mA).
* High Collector current (I
C(Max.)
=600mA).
* Internal isolated NPN transistors in one package.
* Built in single resistor(R1=10kΩ, Typ. )
SOT-23
.041 (1.05)
.033 (0.85)
(1)
.110 (2.80)
.082 (2.10)
.066 (1.70)
.119 (3.04)
(3)
(2)
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.018 (0.30)
.002 (0.05)
Emitter
Base
1
CIRCUIT
2
.045 (1.15)
.033 (0.85)
TR
R1
.019 (0.50)
3
Collector
Dimensions in millimeters
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(Max.)
P
D
T
STG
T
J
Rθ
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-01
PARAMETER
Coll ector -Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Coll ector current
Power dissipation
Storage temperature
Junction temperature
Thermal resistance , Note 1
CONDITIONS
30
15
5
600
T
amb
≤
25
O
C, Note 1
200
VALUE
V
V
V
UNIT
mA
mW
O
−55 ∼ +150
+150
junction - soldering point
140
C
O
C
C/W
O
RATING CHARACTERISTIC ( CHDTC314TKGP )
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
PARAMETER
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
CONDITIONS
I
C
=50uA
I
E
=50uA
V
CB
=20V
V
EB
=4V
I
C
/I
B
=50mA/2.5mA
I
C
=50mA; V
CE
=5.0V
I
E
=-50mA, V
CE
=10.0V
f=100MHz
MIN.
30
15
5.0
−
−
−
100
7
−
−
−
−
−
−
TYP.
−
−
−
MAX.
V
V
V
UNIT
Collector-emitter breakdown voltage
I
C
=1.0mA
0.5
0.5
0.08
600
13
−
uA
uA
V
KΩ
MHz
DC current gain
Input resistor
Transition frequency
0.04
250
10
200
Note
1.Pulse test: tp≤300uS;
δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTC314TKGP )
Typical Electrical Characteristics
COLLECsaturationTOR
VOLTAGE : V
CE(sat)
(V)
1k
500
DC CURRENT GAIN : h
FE
Fig.1 DC current gain vs. collector
current
V
CE
= 5V
Fig.2 Collector-emitter voltage vs.
collector current
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
1m
10m
100m
500m
COLLECTOR CURRENT : I
C
(A)
Ta=100
O
C
25
O
C
-40
O
C
l
O
/l
I
=20
200
100
50
20
10
5
2
1
1m
10m
100m
500m
COLLECTOR CURRENT : I
C
(A)
Ta=100
O
C
25
O
C
-40
O
C
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