LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
•
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
•
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
LDTB143TLT1G
S-LDTB143TLT1G
3
1
2
SOT-23
•
We declare that the material of product compliance with
RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−50
−40
−5
−500
200
150
−55
to
+150
Unit
V
V
V
mA
mW
C
C
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
LDTB143TLT1G
S-LDTB143TLT1G
LDTB143TLT3G
S-LDTB143TLT3G
Marking
K2
K2
R1 (K)
4.7
4.7
R2 (K)
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
Min.
−50
−40
−5
−
−
−
100
3.29
−
Typ. Max.
−
−
−
−
−
−
250
4.7
200
−
−
−
−0.5
−0.5
−0.3
600
6.11
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −50V
V
EB
= −4V
I
C
/I
B
= −50mA/−2.5mA
V
CE
= −5V,
I
C
= −50mA
−
V
CE
= −10V,
I
E
=50mA,
f=100MHz
Conditions
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDTB143TLT1G ;S-LDTB143TLT1G
Electrical characteristic curves
1k
500
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
V
CE
= −5V
-1
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
-0.5m -1m -2m
-5m -10m -20m
Ta=100 C
25 C
−40
C
l
C
/l
B
=20
200
100
50
20
10
5
2
1
-0.5m -1m -2m
-5m -10m -20m
-50m -100m -200m -500m
Ta=100 C
25 C
−40
C
-50m -100m -200m -500m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collectorcurrent
Fig.2Collector-emitter saturation
voltage vs. collector current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDTB143TLT1G ;S-LDTB143TLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
D
H
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
