NJU7029
Low Noise, Rail-to-Rail Output Dual CMOS Operational Amplifier
■
GENERAL DESCRIPTION
The NJU7029 is a CMOS operational amplifier that feature
low noise as V
NI
=13V/√Hz (typ.) @f=1kHz, low operating
voltage.
FET input devices provide very low input bias current and
suitable for applications uses current signal such as
accelerometers, shock sensors and photodiode amplifiers.
■
FEATURES
Low Noise
●Voltage
Noise
■
PACKAGE OUTLINE
NJU7009V
NJU7009RB1
13nV/√Hz (typ.) @f=1kHz
3µVrms (max.) @f=100Hz~20kHz
Easy to Use
●Gain
Bandwidth
3MHz
●Slew
Rate
1V/
µ
s (typ.) @R
L
=50kΩ
●Isource
/ Isink
200µA
●Specified
for +5V, +3V and +2.2V operation
CMOS Process
●Input
Bias Current 1pA (typ.)
●Rail-to-Rail
Output
●Offset
Voltage
●Offset
Voltage Drift
●Supply
Range
●Supply
Current
●Package
5mV (max.)
2µV/ºC (typ.)
2.2V ~ 5.5V
850µA /all ch (typ.) @V
DD
=+5V
SSOP8, TVSP8
■
Application
●Shock
sensors, Accelerometers
●Charge
amplifiers
●Photodiode
amplifiers
●Low
noise signal processing applications
●Microphone
amplifiers
■
Typical Application Circuit
■
PIN CONFIGURATION
( Top View )
OUTPUT 1
INPUT 1
+INPUT 1
V
SS
1
2
3
4
1
2
8
7
6
5
V
DD
OUTPUT 2
-INPUT 2
+INPUT 2
Charge Amplifier
Ver.2009-03-04
-1-
NJU7029
■
ABSOLUTE MAXIMUM RATINGS
(Ta=25˚C)
PARAMETER
Supply Voltage
Common Mode Input Voltage Range
Differential Input Voltage Range
Power Dissipation
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
DD
V
ICM
V
ID
P
D
Topr
Tstg
RATINGS
+7
-0.3~+7 (Note1)
±7 (Note1)
SSOP8:330 (Note2)
TVSP8:410 (Note2)
-40~+85
-55~+125
UNIT
V
V
V
mW
°C
°C
(Note 1) For supply voltage less than 7V, the absolute maximum input voltage is equal to the supply voltage.
(Note 2) On the PCB “EIA/JEDEC (6.2x114.3x1.6mm, two layers FR-4)”
Refer to following Figure 1 for a permissible loss when ambient temperature (Ta) is Ta≥25°C.
500
450
Power Dissipation Pd (mW)
400
350
300
250
200
150
100
50
0
5
25
45
65
85
105
125
Ambient Temperature Ta (ºC)
Fifure1 Power Dissipation vs. Ambient Temperature
TVSP8
SSOP8
SSOP8
TVSP8
∆P
D
=−3.3mW/°C
∆P
D
=−4.1mW/°C
■
OPERATING VOLTAGE
(Ta=25˚C)
PARAMETER
Supply Voltage
SYMBOL
V
DD
TEST CONDITION
MIN.
2.2
TYP.
-
MAX.
5.5
UNIT
V
-2-
Ver.2009-03-04
NJU7029
■
+5V ELECTRICAL CHARACTERISTICS
●DC
CHARACTERISTICS (V
DD
=5V
,
Ta=25˚C)
PARAMETER
Operating Current
Input offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage1
Output Voltage2
Input Common Mode Voltage Range
SYMBOL
I
DD
V
IO
∆Vio/∆T
I
B
I
IO
A
V
CMR
SVR
V
OH
1
V
OL
1
V
OH
2
V
OL
2
V
ICM
R
L
=50kΩ to 2.5V, Vo=2.5V±2V
V
ICM
=0V~4.1V
2.2V≤V
DD
≤5.5V
R
L
=50kΩ to 2.5V
R
L
=50kΩ to 2.5V
Isource =200uA
Isink=200uA
CMR≥65dB
V
IN
=V
DD
/2, Ta=-40°C~+85°C
TEST CONDITION
No Signal
MIN.
-
-
-
-
-
65
65
65
4.9
-
4.8
-
0
TYP.
850
2
2
1
1
80
80
80
-
-
-
-
-
MAX.
1150
5
-
-
-
-
-
-
-
0.1
-
0.2
4.1
UNIT
µA
mV
µV/°C
pA
pA
dB
dB
dB
V
V
V
V
V
●AC
CHARACTERISTICS (V
DD
=5V
,
Ta=25˚C)
PARAMETER
Unity Gain Frequency
SYMBOL
f
T
V
NI
Equivalent Input Noise Voltage
V
NIrms
Total Harmonic Distortion
Channel separation
THD
CS
TEST CONDITION
Gv=40dB, R
L
=50kΩ to 2.5V, C
L
=10pF
Gv=40dB, R
L
=50kΩ to 2.5V, f=1kHz,
Gv=40dB, R
L
=50kΩ to 2.5V
BPW=100Hz~20kHz
Gv=20dB, R
L
=50kΩ to 2.5V, fin=1kHz,
Vout=3Vpp, BPW=400Hz~80kHz
f=1kHz
MIN.
-
-
-
-
-
TYP.
3
13
1.7
0.01
130
MAX.
-
-
3
-
-
UNIT
MHz
nV/√Hz
µVrms
%
dB
●TRANSIENT
CHARACTERISTICS (V
DD
=5V, Ta=25˚C)
PARAMETER
Slew Rate
SYMBOL
SR
TEST CONDITION
Gv=0dB, R
T
=50Ω to 2.5V,
R
L
=50kΩ to 2.5V, C
L
=15pF
MIN.
-
TYP.
1
MAX.
-
UNIT
V/µs
Ver.2009-03-04
-3-
NJU7029
■
+3V ELECTRICAL CHARACTERISTICS
●DC
CHARACTERISTICS (V
DD
=3V
,
Ta=25˚C)
PARAMETER
Operating Current
Input offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage1
Output Voltage2
Input Common Mode Voltage Range
SYMBOL
I
DD
V
IO
∆Vio/∆T
I
B
I
IO
A
V
CMR
SVR
V
OH
1
V
OL
1
V
OH
2
V
OL
2
V
ICM
R
L
=50kΩ to 1.5V, Vo=1.5V±1V
V
ICM
=0V~2.1V
2.2V≤V
DD
≤5.5V
R
L
=50kΩ to 1.5V
R
L
=50kΩ to 1.5V
Isource =200µA
Isink=200µA
CMR≥65dB
V
IN
=V
DD
/2, Ta=-40°C~+85°C
TEST CONDITION
No Signal
MIN.
-
-
-
-
-
65
65
65
2.9
-
2.8
-
0
TYP.
610
2
2
1
1
80
80
80
-
-
-
-
-
MAX.
950
5
-
-
-
-
-
-
-
0.1
-
0.2
2.1
UNIT
µA
mV
µV/deg
pA
pA
dB
dB
dB
V
V
V
V
V
●AC
CHARACTERISTICS (V
DD
=3V
,
Ta=25˚C)
PARAMETER
Unity Gain Frequency
SYMBOL
f
T
V
NI
Equivalent Input Noise Voltage
V
NIrms
Total Harmonic Distortion
Channel separation
THD
CS
TEST CONDITION
Gv=40dB, R
L
=50kΩ to 1.5V, C
L
=10pF
Gv=40dB, R
L
=50kΩ to 1.5V,
f=1kHz
Gv=40dB, R
L
=50kΩ to 1.5V,
BPW=100Hz~20kHz
Gv=20dB, R
L
=50kΩ to 1.5V, fin=1kHz,
Vout=1Vpp, BPW=400Hz~80kHz
f=1kHz
MIN.
-
-
-
-
-
TYP.
3
13
1.7
0.02
120
MAX.
-
-
3
-
-
UNIT
MHz
nV/√Hz
µVrms
%
dB
●TRANSIENT
CHARACTERISTICS (V
DD
=3V, Ta=25˚C)
PARAMETER
Slew Rate
SYMBOL
SR
TEST CONDITION
Gv=0dB, R
T
=50Ω to 1.5V,
R
L
=50kΩ to 1.5V, C
L
=15pF
MIN.
-
TYP.
1
MAX.
-
UNIT
V/µs
-4-
Ver.2009-03-04
NJU7029
■
+2.2V ELECTRICAL CHARACTERISTICS
●DC
CHARACTERISTICS (V
DD
=2.2V
,
Ta=25˚C)
PARAMETER
Operating Current
Input offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage1
Output Voltage2
Input Common Mode Voltage Range
SYMBOL
I
DD
V
IO
∆Vio/∆T
I
B
I
IO
A
V
CMR
SVR
V
OH
1
V
OL
1
V
OH
2
V
OL
2
V
ICM
R
L
=50kΩ to 1.5V, Vo=1.1V±0.5V
V
ICM
=0V~1.3V
2.2V≤V
DD
≤5.5V
R
L
=50kΩ to 1.1V
R
L
=50kΩ to 1.1V
Isource =200µA
Isink=200µA
CMR≥60dB
V
IN
=V
DD
/2, Ta=-40°C~+85°C
TEST CONDITION
No Signal
MIN.
-
-
-
-
-
60
60
65
2.1
-
2.0
-
0
TYP.
550
2
2
1
1
80
80
80
-
-
-
-
-
MAX.
890
5
-
-
-
-
-
-
-
0.1
-
0.2
1.3
UNIT
µA
mV
µV/deg
pA
pA
dB
dB
dB
V
V
V
V
V
●AC
CHARACTERISTICS (V
DD
=2.2V
,
Ta=25˚C)
PARAMETER
Unity Gain Frequency
SYMBOL
f
T
V
NI
Equivalent Input Noise Voltage
V
NIrms
Total Harmonic Distortion
Channel separation
THD
CS
TEST CONDITION
Gv=40dB, R
L
=50kΩ to 1.1V, C
L
=10pF
Gv=40dB, R
L
=50kΩ to 1.1V,
f=1kHz
Gv=40dB, R
L
=50kΩ to 1.1V,
BPW=100Hz~20kHz
Gv=20dB, R
L
=50kΩ to 1.1V, fin=1kHz,
Vout=0.5Vpp, BPW=400Hz~80kHz
f=1kHz
MIN.
-
-
-
-
-
TYP.
3
13
1.7
0.02
115
MAX.
-
-
3
-
-
UNIT
MHz
nV/√Hz
µVrms
%
dB
●TRANSIENT
CHARACTERISTICS (V
DD
=2.2V, Ta=25˚C)
PARAMETER
Slew Rate
SYMBOL
SR
TEST CONDITION
Gv=0dB, R
T
=50Ω to 1.1V,
R
L
=50kΩ to 1.5V, C
L
=15pF
MIN.
-
TYP.
1
MAX.
-
UNIT
V/µs
Ver.2009-03-04
-5-
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
