Datasheet> 器件分类 > 分立半导体> 晶体管> CTLDM8120-M621HBK

CTLDM8120-M621HBK: 产品描述Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1.50 X 2 MM, 0.40 MM HEIGHT, TLM621H, 6 PIN; 产品类别分立半导体晶体管; 文件大小418KB，共2页; 制造商Central Semiconductor

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CTLDM8120-M621HBK概述

Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1.50 X 2 MM, 0.40 MM HEIGHT, TLM621H, 6 PIN

CTLDM8120-M621HBK规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	SMALL OUTLINE, R-PDSO-N6
针数	6
Reach Compliance Code	not_compliant
ECCN代码	EAR99
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	20 V
最大漏极电流 (Abs) (ID)	0.86 A
最大漏极电流 (ID)	0.86 A
最大漏源导通电阻	0.15 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-N6
湿度敏感等级	1
元件数量	1
端子数量	6
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	225
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	1.6 W
最大脉冲漏极电流 (IDM)	4 A
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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CTLDM8120-M621H

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CTLDM8120-M621H is a very low profile (0.4mm)

P-Channel enhancement-mode MOSFET in a small,

thermally efficient, 1.5mm x 2mm TLM™ package.

MARKING CODE: CNF

TLM621H CASE

• Device is

Halogen Free

by design

FEATURES:

•

Low rDS(ON) (0.24Ω MAX @ VDS=1.8V)

High Current (ID=0.95A)

Logic Level Compatible

Small, 1.5 x 2.0 x 0.4mm Ultra Low Height Profile TLM

™

8.0

860

950

360

4.0

1.6

-65 to +150

UNITS

°C

°C/W

APPLICATIONS:

• Load / Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Drain Current, t≤5.0s

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current, tp=10μs

Maximum Pulsed Source Current, tp=10μs

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

SYMBOL

VDS

VGS

IDM

ISM

TJ, Tstg

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR VGS=8.0V, VDS=0

1.0

IDSS

VDS=20V, VGS=0

5.0

BVDSS

VGS(th)

VSD

rDS(ON)

Qg(tot)

Qgs

Qgd

VGS=0, ID=250μA

VDS=VGS, ID=250μA

VGS=0, IS=360mA

VGS=4.5V, ID=0.95A

VGS=4.5V, ID=0.77A

VGS=2.5V, ID=0.67A

VGS=1.8V, ID=0.2A

VDS=10V, VGS=4.5V, ID=1.0A

0.45

0.76

130

190

3.56

0.36

1.52

MAX

500

1.0

0.9

150

142

200

240

UNITS

mΩ

Notes: (1) Mounted on a 4-layer JEDEC test board with one thermal vias connecting the

exposed thermal pad to the first buried plane. PCB was constructed as per

JEDEC standards JESD51-5 and JESD51-7.

R2 (2-August 2011)

CTLDM8120-M621HBK相似产品对比

	CTLDM8120-M621HBK	CTLDM8120-M621HTR	CTLDM8120-M621HTRLEADFREE
描述	Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1.50 X 2 MM, 0.40 MM HEIGHT, TLM621H, 6 PIN	Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1.50 X 2 MM, 0.40 MM HEIGHT, TLM621H, 6 PIN	Transistor
是否Rohs认证	不符合	不符合	符合
包装说明	SMALL OUTLINE, R-PDSO-N6	SMALL OUTLINE, R-PDSO-N6	,
Reach Compliance Code	not_compliant	unknown	compliant
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single
最大漏极电流 (Abs) (ID)	0.86 A	0.86 A	0.86 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL
最大功率耗散 (Abs)	1.6 W	1.6 W	1.6 W
表面贴装	YES	YES	YES
针数	6	6	-
ECCN代码	EAR99	EAR99	-
最小漏源击穿电压	20 V	20 V	-
最大漏极电流 (ID)	0.86 A	0.86 A	-
最大漏源导通电阻	0.15 Ω	0.15 Ω	-
JESD-30 代码	R-PDSO-N6	R-PDSO-N6	-
元件数量	1	1	-
端子数量	6	6	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	SMALL OUTLINE	-
峰值回流温度（摄氏度）	225	NOT SPECIFIED	-
最大脉冲漏极电流 (IDM)	4 A	4 A	-
认证状态	Not Qualified	Not Qualified	-
端子形式	NO LEAD	NO LEAD	-
端子位置	DUAL	DUAL	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-
晶体管应用	SWITCHING	SWITCHING	-
晶体管元件材料	SILICON	SILICON	-
厂商名称	-	Central Semiconductor	Central Semiconductor

CTLDM8120-M621HBK

CTLDM8120-M621HBK概述

CTLDM8120-M621HBK规格参数

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