Datasheet> 器件分类 > 分立半导体> 晶体管> CMLT3820GLEADFREE

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CMLT3820GLEADFREE: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小509KB，共2页; 制造商Central Semiconductor

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CMLT3820GLEADFREE概述

Transistor

CMLT3820GLEADFREE规格参数

参数名称	属性值
包装说明	,
Reach Compliance Code	compliant
Base Number Matches	1

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CMLT3820G

SURFACE MOUNT

VERY LOW VCE(SAT)

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT3820G is

a very low VCE(SAT) NPN Transistor, designed for

applications where small size and efficiency are the

prime requirements. Packaged in a space saving

PICOmini™ SOT-563 surface mount package, this

component provides performance characteristics

suitable for the most demanding size constrained

applications.

MARKING CODE: 38G

FEATURES:

•

Device is

Halogen Free

by design

•

High Current (IC=1.0A)

•

VCE(SAT)=0.28V MAX @ IC=1.0A

SOT-563 CASE

APPLICATIONS:

•

DC/DC Converters

•

Voltage Clamping

•

Protection Circuits

•

Battery powered Cell Phones, Pagers,

Digital Cameras, PDAs, Laptops, etc.

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

•

PICOmini™ SOT563 surface mount package

•

Complementary PNP device

CMLT7820G

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ, Tstg

5.0

1.0

2.0

300

250

-65 to +150

500

MAX

100

UNITS

°C

°C/W

UNITS

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=60V

IEBO

VEB=5.0V

BVCBO

IC=100µA

BVCEO

IC=10mA

BVEBO

5.0

IE=100µA

VCE(SAT)

IC=100mA, IB=1.0mA

VCE(SAT)

IC=500mA, IB=50mA

VCE(SAT)

IC=1.0A, IB=100mA

VBE(SAT)

IC=1.0A, IB=50mA

VBE(ON)

VCE=5.0V, IC=1.0A

hFE

VCE=5.0V, IC=1.0mA

200

hFE

VCE=5.0V, IC=500mA

200

hFE

VCE=5.0V, IC=1.0A

100

VCE=10V, IC=50mA

150

Cob

VCB=10V, IE=0, f=1.0MHz

0.115

0.15

0.28

1.1

0.9

MHz

R2 (20-January 2010)

CMLT3820GLEADFREE相似产品对比

	CMLT3820GLEADFREE	CMLT3820GTR	CMLT3820GBK
描述	Transistor	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, PICOMINI-6	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, PICOMINI-6
包装说明	,	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code	compliant	not_compliant	not_compliant
Base Number Matches	1	1	-
是否Rohs认证	-	不符合	不符合
针数	-	6	6
ECCN代码	-	EAR99	EAR99
最大集电极电流 (IC)	-	1 A	1 A
集电极-发射极最大电压	-	60 V	60 V
配置	-	SINGLE	SINGLE
最小直流电流增益 (hFE)	-	100	100
JESD-30 代码	-	R-PDSO-F6	R-PDSO-F6
JESD-609代码	-	e0	e0
元件数量	-	1	1
端子数量	-	6	6
最高工作温度	-	150 °C	150 °C
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	-	NPN	NPN
最大功率耗散 (Abs)	-	0.25 W	0.25 W
认证状态	-	Not Qualified	Not Qualified
表面贴装	-	YES	YES
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	-	FLAT	FLAT
端子位置	-	DUAL	DUAL
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	-	SWITCHING	SWITCHING
晶体管元件材料	-	SILICON	SILICON
标称过渡频率 (fT)	-	150 MHz	150 MHz

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